CAICISSに関する文献について

Publications about Coaxial Impact-Collision Ion Scattering Spectroscopy (CAICISS)

Last update: May 28, 2004

Mitsuhiro Katayama

katayama@ele.eng.osaka-u.ac.jp

Department of Electronic Engineering, Graduate School of Engineering, Osaka University

［Ⅰ］Reviews　

1）片山光浩, 藤野俊明, 尾浦憲治郎：気相雰囲気下の表面プロセスのイオンビームその場計測－ Ge/Si(001)水素サーファクタント媒介エピタキシー－, 表面科学第23巻第12 号, 759- 766 (2002).

2）片山光浩：”気相雰囲気における表面プロセスのイオンビームその場計測法の開拓”, 生産技術誌第52巻第3号, 59- 62 (2000).

3）片山光浩, 青野正和：同軸型直衝突イオン散乱スペクトロメトリ, RADIOISOTOPES 第44巻第6号, 412- 428 (1995).

4）片山光浩, 中山知信, 青野正和：CAICISS による表面構造モニターとそれによる膜成長コントロール, 表面科学第14巻第7号, 423- 428 (1993).

5） Katayama M; McConville CF; Kawai M; Aono M：Novel automated method for oxide superconductor film growth, RIKEN REVIEW 1993, Vol 2, pp 25- 26

6） Aono M; Katayama M; Nomura E：Real-time monitoring of surface processes by a novel form of low-energy ion scattering, published in Dynamic Processes on Solid Surfaces, edited by Kenji Tamaru. Plenum Press, New York, 59-67 (1993).

7）青野正和, 片山光浩：イオン散乱分光によるエピタクシーのその場解析, 日本物理学会編「表面新物質とエピタクシー」（培風館）第12章, 164- 178 (1992).

8）片山光浩, 青野正和：同軸型直衝突イオン散乱分光法（CAICISS）, 応用物理第61巻第2号, 171- 172 (1992).

9） Katayama M; King BV; Daley RS; Williams RS; Nomura E; Aono M：Surface and interface structural analysis by coaxial impact-collision ion scattering spectroscopy (CAICISS), Springer Series in Material Science Vol. 17 (Ordering at Surfaces and Interfaces), edited by A. Yoshimori and H. Watanabe, 67- 72 (1992).

10）片山光浩, 野村英一, 青野正和：同軸型直衝突イオン散乱分光法（CAICISS）とその応用, 表面科学第12巻第10号, 615- 622 (1991).

11）片山光浩, 野村英一, 青野正和：イオン散乱分光と表面構造の動的観察, セラミックス第26巻第6号, 525- 530 (1991).

12）林茂樹, 丸井隆雄, 寺本晃, 谷口純一, 梶川鉄夫, 副島啓義, 野村英一, 片山光浩, 青野正和：同軸形直衝突イオン散乱分光装置（CAICISS）の開発とその応用, 島津評論　第47巻　第1号, 11- 22 (1990).

13）青野正和, 片山光浩, 神谷格, 野村英一：微小領域の機能評価法とその応用－新しい低速イオン散乱分光法－, 応用物理第59巻第3号, 336- 344 (1990).

14）青野正和, 片山光浩：イオンビームによる表面構造解析, 表面科学第10巻第10号, 676- 685 (1989).

15）青野正和, 片山光浩：単原子層の原子構造, 応用物理第57巻第11号, 1686- 1697 (1988).

［Ⅱ］Instrumentation and Methods

16） Katayama M; Fujino T; Yamazaki Y; Inoue S; Ryu JT; Oura K：Coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis for in situ monitoring of surface processes in gas phase atmosphere, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2001, Vol 40, Iss 6A, pp L576- L579

17） Fujino T; Katayama M; Yamazaki Y; Inoue S; Ryu JT; Oura K：Ion scattering and recoiling spectroscopy for real time monitoring of surface processes in a gas phase atmosphere, SURFACE REVIEW AND LETTERS 2000, Vol 7, Iss 5- 6, pp 657-659

18） Katayama M; Nakayama T; McConville CF; Aono M：Surface and interface structural control using coaxial impact-collision ion scattering spectroscopy (CAICISS), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1995, Vol 99, Iss 1- 4, pp 598- 601

19） Aono M; Katayama M; Nomura E：Exploring surface structures by coaxial impact collision ion scattering spectroscopy (CAICISS), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1992, Vol 64, Iss 1- 4, pp 29- 37

20） Charatan RM; Williams RS：Scattering of low-energy ions from surfaces at 180°, SURFACE SCIENCE 1992, Vol 264, Iss 1- 2, pp L207- L212

21） King BV; Oconnor DJ; Shen Y; Macdonald RJ; Katayama M; Aono M：LEIS for Structure Determination of Surfaces and Thin Films, APPLIED SURFACE SCIENCE 1991, Vol 48- 9, pp 246- 253

22） Kamiya I; Katayama M; Nomura E; Aono M：Separation of Scattered Ions and Neutrals in CAICISS with an Acceleration Tube, SURFACE SCIENCE 1991, Vol 242, Iss 1- 3, pp 404- 409

23） Williams RS; Kato M; Daley RS; Aono M：Scattering Cross Sections for Ions Colliding Sequentially with Two Target Atoms, SURFACE SCIENCE 1990, Vol 225, Iss 3, pp 355- 366

24） Aono M; Katayama M：A Novel method for real-time monitoring of molecular beam epitaxy (MBE) processes, PROCEEDINGS OF THE JAPAN ACADEMY 1989, Vol 65, Ser. B, No.6, pp 137- 141

25） Kato M; Katayama M; Chasse T; Aono M：Channeling and backscattering of low energy ions, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1989, Vol 39, pp 30- 34

26） Aono M; Katayama M; Nomura E; Choi D; Chasse T; Kato M：Recent developments in low-energy ion scattering spectroscopy (ISS) for surface structural analysis, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1989, Vol 37-38, pp 264-269

27） Katayama M; Nomura E; Kanekama N; Soejima H; Aono M：Coaxial impact-collision ion scattering spectroscopy (CAICISS): a novel method for surface structure analysis, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1988, Vol 33, pp 857- 861

［Ⅲ］Surface Analysis by CAICISS

① Surface Structures and Thin Films on Silicon

28） Tsushima R; Katayama M; Fujino T; Shindo M; Okuno T; Oura K：Temperature dependence of flat Ge/Si(001) heterostructures as observed by CAICISS”, APPLIED SURFACESCIENCE 2003, Vol 216 Iss 1-4, pp 19-23

29） Kim JY; Park JY, Seo JH; Whang CH, Kang HJ; Kim SS; Choi DS; Chae KH：Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature, SURFACE SCIENCE 2003, Vol 531, Iss 1, pp. L340-L346

30） Fujino T; Katayama M; Inoue S; Tatsumi A; Horikawa T; Oura K：Quantitative analysis of hydrogen-induced Si segregation on Ge-Covered Si(001) surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2003, Vol 42, Iss 5A, pp. L485-L488

31） Oura K; Katayama M：Ion beam as a probe to study the behavior of hydrogen on silicon surfaces, CURRENT APPLIED PHYSICS 2003, Vol 3, Iss 1, pp 39-44

32） Kishi N; Morita K：Structure analysis of the Si(111)-root-3x root 3-Sb surface by means of CAICISS combined with LEED-AES-RBS techniques, CURRENT APPLIED PHYSICS 2003, Vol 3, Iss 1, pp 57-60

33） Katayama M：Exploring surface processes by coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis, CURRENT APPLIED PHYSICS 2003, Vol 3, Iss 1, pp 65-69

34） Kim JY; Park JY; Seo JH; Whang CN; Kim SS; Choi DS; Kang HJ; Chae KH：Atomic structure of Cs grown on Si(001)(2x1) surface by coaxial impact collision ion scattering spectroscopy, CURRENT APPLIED PHYSICS 2003, Vol 3, Iss 1, pp 83-88

35） Kim KS; Choi JU; Cho YJ; Kang HJ ：Atomic structure of Si(113) surface studied by coaxial impact collision ion scattering spectroscopy, SURFACE AND INTERFACE ANALYSIS 2003, Vol 35, Iss 1, pp 80-83

36） Fujino T; Katayama M; Okuno T; Shindo M; Tsushima R; Oura K：Thermal stability in the morphology of Ge films on Si(001) grown by hydrogen-surfactant-mediated epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2003, Vol 42, Iss 1AB, pp. L63-L66

37） Morita K; Kishi N：Recent progress in backscattering study of low energy light ions from monolayer metal adsorbates on solid surfaces by TOF-CAICISS analysis, IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA 2002, Vol 66, Iss 7, pp 1008-1011

38） Ryu JT; Katayama M; Oura K：Sn Thin film growth on Si(111) surface studied by CAICISS, SURFACE SCIENCE 2002, Vol 515, pp 199-204

39） Kishi N; Morita K：Differential scattering cross-sections, inelastic energy losses and ion fractions in backscattering of keV He⁺ ions from monolayer metal adsorbates on solid surfaces measured by means of CAICISS, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 2002, Vol 193, pp 419-432

40） Ikeuchi T; Souda R; Yamamoto S：Atomic and electronic structures of barium oxide on Si(001) studied by metastable impact electron spectroscopy (MIES) and coaxial impact collision ion scattering spectroscopy (CAICISS), APPLIED SURFACE SCIENCE 2002, Vol 191, Iss 1-4, pp 261-265

41） Ryu JT; Fujino T; Katayama M; Kim YB; Oura K：Influence of interface structures on Sn thin film growth on Si(111) surface, APPLIED SURFACE SCIENCE 2002, Vol 190, pp 139-143

42） Yuhara J; Nakamura D; Soda K; Morita K：Si(111) √7x√3-(Pb, Sn) surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopy, SURFACE SCIENCE 2001, Vol 482, pp 1374- 1378

43） Ikeda K; Yanase J; Sugahara S; Uchida Y; Matsumura M：Characterization of initial one monolayer growth of Ge on Si(100) and Si on Ge(100), APPLIED SURFACE SCIENCE 2001, Vol 175, pp 1- 5

44） Cho WS; Kim JY; Kim SS; Choi DS; Jeong K; Lyo IW; Whang CN; Chae KH：Atomic structure of Ba layer on Si(001)-(2x1) surface studied by low energy ion scattering, SURFACE SCIENCE 2001, Vol 476, Iss 3, pp L259- L266

45） Morita K; Kishi N; Grigoriev A; Masuzaki S; Muroga T：TOF analysis of reflection of low-energy light ions from solid targets using coaxial impact collision ion scattering spectroscopy (CAICISS), JOURNAL OF NUCLEAR MATERIALS 2001, Vol 290, pp 126- 130

46） Furusawa M; Tashiro J; Sasaki A; Nakajima K; Takakura M; Chikyow T; Ahmet P; Yoshimoto M：In situ analysis of the room-temperature epitaxial growth of CeO₂ ultrathin films on Si(111) by coaxial impact-collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 2001, Vol 78, Iss 13, pp 1838- 1840

47） Yuhara J; Matsuda K; Hattori Y; Morita K：Studies on thermal property and atomic structure of the (Bi, Sb)/Si(111) surface, APPLIED SURFACE SCIENCE 2000, Vol 162, pp 368- 374

48） Wasekura M; Higashi M; Ikeda H; Sakai A; Zaima S; Yasuda Y：A study on initial oxidation of Si(100)-2x1 surfaces by coaxial impact collision ion scattering spectroscopy, APPLIED SURFACE SCIENCE 2000, Vol 159, pp 35- 40

49） Cho WS; Kim JY; Park NG; Lyo IW; Jeong K; Kim SS; Choi DS; Whang CN; Chae KH：Atomic structure of ultrathin Co layer on Si(001)(2 x 1) at room temperature, SURFACE SCIENCE 2000, Vol 453, Iss 1-3, pp L309- L314

50） Ryu JT; Kubo O; Fujino T; Fuse T; Harada T; Kawamoto K; Katayama M; Saranin AA; Zotov AV; Oura K：Atomic-hydrogen-induced self-organization of Si(111)√3 x√3-In surface phase studied by CAICISS and STM, SURFACE SCIENCE 2000, Vol 447, Iss 1-3, pp 117- 125

51） Cho WS; Kim JY; Park NG; Chae KH; Kim YW; Lyo IW; Kim SS; Choi DS; Whang CN：Atomic structure of Ag grown on Si(001)(2 x 1) at high temperature, SURFACE SCIENCE 1999, Vol 439, Iss 1-3, pp L792- L798

52） Fuse T; Fujino T; Ryu JT; Katayama M; Oura K：Total cross section of electron stimulated desorption of hydrogen from hydrogen-terminated Ge/Si(001) as observed by time of flight elastic recoil detection analysis, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1999, Vol 38, Iss 5A, pp 2878- 2880

53） Matsui M; Uchida F; Tokunaga T; Enomoto H; Umezawa T：Low-energy ion scattering spectroscopic analysis of structural damage in Si substrate under ultrathin SiO₂ after gate etching, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1999, Vol 38, Iss 4A, pp 2124- 2130

54） Fuse T; Ryu JT; Fujino T; Inudzuka K; Katayama M; Oura K：Adsorption of H on the Ge/Si(001) surface as studied by time-of-flight elastic recoil detection analysis and coaxial impact collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1999, Vol 38, Iss 3A, pp 1359- 1362

55） Ryu JT; Fuse T; Kubo O; Fujino T; Tani H; Harada T; Saranin AA; Zotov AV; Katayama M; Oura K：Adsorption of atomic hydrogen on the Si(001)4x3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 1999, Vol 17, Iss 3, pp 983- 988

56） Fuse T; Fujino T; Ryu JT; Katayama M; Oura K：Electron-stimulated desorption of hydrogen from H/Si(001)-1x1 surface studied by time-of-flight elastic recoil detection analysis, SURFACE SCIENCE 1999, Vol 420, Iss 1, pp 81- 86

57） Park NG; Kim YW; Cho WS; Kim JY; Choi DS; Jeong K; Chae KH; Whang CN：Atomic structure of two- dimensional Ag layer grown on Si(001)-(2x1) at room temperature, SURFACE SCIENCE 1998, Vol 414, Iss 1- 2, pp L945- L950

58） Ryu JT; Kui K; Noda K; Katayama M; Oura K：The effect of hydrogen termination on In growth on Si(100) surface, SURFACE SCIENCE 1998, Vol 401, Iss 3, pp L425- L431

59） Matsui M; Uchida F; Katsuyama K; Tokunaga T; Kojima M：Low-energy ion scattering measurement of near- surface damage induced by the SiO₂ dry-etching process, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1998, Vol 37, Iss 4A, pp 2043- 2050

60） Ryu JT; Kui K; Noda K; Katayama M; Oura K：CAICISS studies of atomic-hydrogen-induced structural changes　of the Sb terminated Si surfaces, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1998, Vol 138, pp 1102- 1107

61） Dixon RJ; McConville CF; Jenkins SJ; Srivastava GP：Structure and stability of the Si(001)c(4x4)-Sb surface, PHYSICAL REVIEW B 1998, Vol 57, Iss 20, pp R12701- R12704

62） Kim YW; Park NG; Cho WS; Chae KH; Whang CN; Kim KS; Kim SS; Choi DS：Atomic structures of Ag islands on Si(001)(2x1), SURFACE SCIENCE 1998, Vol 396, Iss 1- 3, pp 295- 303

63） Ryu JT; Kui K; Katayama M; Oura K：Atomic-hydrogen-induced structural change of the Si(100)-(2x1)-Sb surface studied by TOF- ICISS, APPLIED SURFACE SCIENCE 1997, Vol 121, pp 223- 227

64） Ikegami H; Ikeda H; Zaima S; Yasuda Y：Thermal stability of ultrathin CoSi₂ films on Si(100)-2x1 surfaces, APPLIED SURFACE SCIENCE 1997, Vol 117, pp 275- 279

65） Ryu JT;　Kui K;　Noda K;　Katayama M;　Oura K：Adsorption of atomic hydrogen on the Si(100)-(2x1)-Sb surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1997, Vol 36, Iss 7A, pp 4435- 4439

66） Ryu JT; Kui K; Tanaka Y; Katayama M; Oura K; Katayama I：TOF-ICISS observation of Pb growth on the Si(111)√3x√3-Ag surface, APPLIED SURFACE SCIENCE 1997, Vol 114, pp 393- 397

67） Noakes TCQ; McConville CF：Coaxial impact collision ion scattering spectroscopy studies of Sb adsorption on the two-domain (100) surface of silicon, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1996, Vol 118, Iss 1- 4, pp 462- 466

68） Kim KS; Kim YW; Park NG;Cho WS; Choi DS; Kim SS; Whang CN：Growth mode of Au layer on Si(001), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1996, Vol 117, Iss 3, pp 289- 294

69） Matsui M; Uchida F; Nakagawa K; Nishida A：Measurement of Si(100) surface morphology by low energy ion scattering spectroscopy, SURFACE SCIENCE 1996, Vol 358, Iss 1- 3, pp 82- 86

70） Tanaka Y; Morishita H; Ryu JT; Katayama I; Oura K：The initial stage of Pb thin film growth on Si(111) surface studied by TOF-ICISS, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1996, Vol 118, Iss 1- 4, pp 530- 532

71） Oura K; Tanaka Y; Morishita H; Shoji F; Katayama I：Low-energy ion scattering study of hydrogen-induced reordering of Pb monolayer films on Si(111) surfaces, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1994, Vol 85, Iss 1- 4, pp 439- 442

72） Hashimoto A; Saitoh T; Tamura M：In-situ observations of As atoms at step sites of vicinal Si(100) surfaces by coaxial impact collision scattering spectroscopy, JOURNAL OF APPLIED PHYSICS 1994, Vol 76, Iss 3, pp 1592-1597

73） Shinohara M; Saraie J; Ishiyama O; Ohtani F; Mitamura S：Coaxial impact collision ion scattering spectroscopy measurements of As/Si(100) structure prepared by ionized cluster beam method, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1993, Vol 32, Iss 10, pp 4485- 4489

74） Wang Y; Teplov SV; Zaporozchenko OS; Bykov V; Rabalais JW：Coaxial scattering probe of the surface and subsurface structure of the Si(100)-(2x1) and Si(100)-(1x1)-H phases, SURFACE SCIENCE 1993, Vol 296, Iss 2, pp 213- 223

75） Hashizume T; Katayama M; Jeon DR; Aono M; Sakurai T：The absolute coverage of K on the Si(111)-3x1-K surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1993, Vol 32, Iss 9A, pp L1263- L1265

76） Chaudhury S; Williams RS; Katayama M; Aono M：Quantitative analysis of the azimuthal dependence of ion scattering from Si(111)- (√3x√3)R30°- Ag, SURFACE SCIENCE 1993, Vol 294, Iss 1-2, pp 93- 98

77） Kinoshita T; Tanaka Y; Sumitomo K; Shoji F; Oura K; Katayama I：Hydrogen-induced reconstruction of Si(111)- √3-Ag surface studied by TOF-ICISS, APPLIED SURFACE SCIENCE 1992, Vol 60-1, pp 183- 189

78） Katayama M; King BV; Nomura E; Aono M：Structure analysis of the CaF₂/Si(111) interface in its initial stage of formation by coaxial impact-collision ion scattering spectroscopy (CAICISS), PROGRESS OF THEORETICAL PHYSICS SUPPLEMENT 1991, Iss 106, pp 315- 320

79） Hashimoto A ;Sugiyama N; Tamura M：In situ characterization of the initial growth stage of GaAs on Si by coaxial impact-collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1991, Vol 30, Iss 12B, pp 3755- 3758

80） Katayama M; King BV; Nomura E; Aono M：Structural analysis of the CaF₂/Si(111) interface by coaxial impact- collision ion scattering spectroscopy (CAICISS), VACUUM 1991, Vol 42, Iss 4, pp 321- 321

81） Oura K; Sumitomo K; Kobayashi T; Kinoshita T; Tanaka Y; Shoji F; Katayama I：Adsorption of H on Si(111)- √3x√3-Ag - evidence for Ag(111) agglomerates formation, SURFACE SCIENCE 1991, Vol 254, Iss 1-3, pp L460- L464

82） Sumitomo K; Tanaka K; Katayama I; Shoji F; Oura K：TOF ICISS study of surface damage formed by Ar ion bombardment on Si(100), SURFACE SCIENCE 1991, Vol 242, Iss 1-3, pp 90- 94

83） Katayama M; Williams RS; Kato M; Nomura E; Aono M：Structure analysis of the Si(111)√3x√3R30°- Ag surface, PHYSICAL REVIEW LETTERS 1991, Vol 66, Iss 21, pp 2762- 2765

84） King BV; Katayama M; Aono M; Daley RS; Williams RS：Analysis of CaF₂-Si(111) using coaxial impact-collision ion scattering spectroscopy, VACUUM 1990, Vol 41, Iss 4- 6, pp 938- 940

85） Sumitomo K; Tanaka K; Izawa Y; Katayama I; Shoji F; Oura K; Hanawa T：Structural study of Ag overlayers depositrd on a Si(111) substrate by impact-collision ion scattering spectroscopy with time-of-flight detection, APPLIED SURFACE SCIENCE 1989, Vol 41/42, pp 112-117

86） Sumitomo K; Oura K; Katayama I; Shoji F; Hanawa T：A TOF-ISS/ERDA apparatus for solid surface analysis, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1988, Vol 33, pp 871-875

② Compound Semiconductors（SiC, GaN, ZnO, InAs, GaAs, InP）

87） Yamaguchi, K; Tomioka, H; Sato, T; Souda, R; Suemasu, T; Hasegawa, F： Influence of AlN growth conditions on the polarity of GaN grown on AlN/Si(111) by metalorganic molecular beam epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Vol 43 (2A): L151-L153 FEB 1 2004

88） Zhang BP; Manh LH; Wakatsuki K; Ohnishi T; Lippmaa M; Usami N; Kawasaki M; Segawa Y：Epitaxial growth and polarity of ZnO films on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 2003, Vol 42, Iss 4B, pp 2291-2295

89） Yoshikawa A; Xu K：In situ investigation for polarity-controlled epitaxy processes of GaN and AlN in MBE and MOVPE growth, OPTICAL MATERIALS 2003, Vol 23, Iss 1-2, pp 7-14

90） Abe H; Eryu O; Kogi O; Nakashima K：Electrical properties of high-dose nitrogen-implanted and rapid thermal annealed 6H–SiC, NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol 206, pp 960-964

91） Zhang BP; Manh L; Wakatsuki K; Tamura K; Ohnishi T; Lippma M; Usami N; Kawasaki M; Koinuma H; Segawa Y：In-plane orientation and polarity of ZnO epitaxial films on As-polished sapphire (alpha-Al2O3) (0001) substrates grown by metal organic chemical vapor deposition, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 2003, Vol 42, Iss 3B, pp L264-L266

92） Okumura H; Shimizu M; Shen XQ; Ide T：Polarity control in MBE growth of III-nitrides, and its device application, CURRENT APPLIED PHYSICS 2002, Vol 2, Iss 4, pp 305-310

93） Abe K; Sumitomo M; Sumi T; Eryu O; Nakashima K：Effects of surface treatments of 6H-SiC upon metal-SiC interfaces, SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS 2002, Vol 389-3, pp 909-912

94） Du XL; Murakami M; Iwaki H; Yoshikawa A：Complete elimination of multi-angle rotation domains in ZnO epilayers grown on (0001) sapphire substrate, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 2002, Vol 192, Iss 1, pp 183-188

95） Lim DH; Xu K; Arima S; Yoshikawa A; Takahashi K：Polarity inversion of GaN films by trimethyl-aluminum preflow in low-pressure metalorganic vapor phase epitaxy growth, JOURNAL OF APPLIED PHYSICS 2002, Vol 91, Iss 10, pp 6461-6464

96） Hong SK; Hanada T; Chen YF; Ko HJ; Yao T; Imai D; Araki K; Shinohara M：Control of polarity of heteroepitaxial ZnO films by interface engineering, APPLIED SURFACE SCIENCE 2002, Vol 190, Iss 1-4, pp 491-497

97） Ohta J; Fujioka H; Furusawa M; Sasaki A; Yoshimoto M; Koinuma H; Sumiya M; Oshima M：CAICISS characterization of GaN films grown by pulsed laser deposition, JOURNAL OF CRYSTAL GROWTH 2002, Vol 237, pp 1153-1157

98） Okuno T; Fujino T; Shindo; Katayama M; Oura K; Sonoda S; Shimizu S：Influence of Mn incorporation on molecular beam epitaxial growth of GaMnN film, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2002, Vol 41, Iss 4A, pp L415 - L417

99） Sumiya M; Yoshimura K; Ogusu N; Fuke S; Mizuno K; Yoshimoto M; Koinuma H; Romano LT：Effect of buffer-layer engineering on the polarity of GaN films, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 2002, Vol. 20 (2), pp.456-458

100） Hong SK; Hanada T; Ko HJ; Chen YF; Yao T; Imai D; Araki K; Shinohara M; Saitoh K; Terauchi M：Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN, PHYSICAL REVIEW B 2002, Vol 65, Iss 11, art. no. 115331

101） Hong SK; Chen Y; Ko HJ; Yao T：Interface engineering in ZnO epitaxy, PHYSICA STATUS SOLIDI B-BASIC RESEARCH 2002, Vol 229, Iss 2, pp 803-813

102） Hasegawa F; Namerikawa M; Takahashi O; Sato T; Souda R：Ga polarity preference in halide vapor phase epitaxy of GaN on a GaAs (111)B: As polar substrate, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 2001, Vol 40, Iss 12B, pp L1352-L1354

103） Y; Tanabe Y; Yamaguchi T; Teraguchi N; Suzuki A; Araki T; Nanishi Y：Polarity of high-quality indium nitride grown by RF molecular beam epitaxy, PHYSICA STATUS SOLIDI B-BASIC RESEARCH 2001, Vol 228, Iss 1, pp 13-16

104） Maki H; Ichinose N; Ohashi N; Haneda H; Tanaka J：The relaxation of the ZnO single crystals (0001) surface, BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS 2000, Vol 78-79, pp 381- 386

105） Hong SK; Hanada T; Makino H; Ko HJ; Chen YF; Yao T; Tanaka A; Sasaki H; Sato S; Imai D; Araki K; Shinohara M：ZnO epilayers on GaN templates: Polarity control and valence band offset, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 2001, Vol 19, Iss 4, pp 1429- 1433

106） Fujino T; Fuse T; Ryu JT; Inudzuka K; Yamazaki Y; Katayama M; Oura K：Observation of hydrogen adsorption on 6H-SiC(0001)surface, APPLIED SURFACE SCIENCE 2001, Vol 169, pp 113- 116

107） Ide T; Shimizu M; Shen XQ; Hara S; Okumura H; Nemoto T：Achievement of MBE-grown GaN heteroepitaxial layer with (0001) Ga-polarity and improved quality by In exposure, SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 &2 2000, Vol 338-3, pp 1459- 1462

108） Fujino T; Fuse T; Ryu JT; Inudzuka K; Yamazaki Y; Katayama M; Oura K：Structural analysis of 6H-SiC(0001)√3x√3 reconstructed surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 2000, Vol 39, Iss 11, pp 6410- 6412

109） Hong SK; Hanada T; Ko HJ; Chen Y; Yao T; Imai D; Araki K; Shinohara M：Control of polarity of ZnO films grown by plasma-assisted molecular beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates, APPLIED PHYSICS LETTERS 2000, Vol 77, Iss 22, pp 3571- 3573

110） Sumiya M; Nakamura S; Chichibu SF; Mizuno K; Furusawa M; Yoshimoto M：Structural analysis of In_xGa_{1- x}N single quantum wells by coaxial impact collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 2000, Vol 77, Iss 16, pp 2512- 2514

111） Shen XQ; Ide T; Cho SH; Shimizu M; Hara S; Okumura H; Sonoda S; Shimizu S：Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH 2000, Vol 218, Iss 2- 4, pp 155-160

112） Fujino T; Fuse T; Ryu JT; Inudzuka K; Yamazaki Y; Katayama M; Oura K：Adsorption of atomic hydrogen on Ag-covered 6H-SiC(0001) surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 2000, Vol 39, Iss 7B, pp 4340- 4342

113） Li DS; Sumiya M; Yoshimura K; Suzuki Y; Fukuda Y; Fuke S：Characteristics of the GaN polar surface during an etching process in KOH solution, PHYSICA STATUS SOLIDI A- APPLIED RESEARCH 2000, Vol 180, Iss 1, pp 357- 362

114） Maki H; Ichinose N; Ohashi N; Haneda H; Tanaka J：The lattice relaxation of ZnO single crystal (0001) surface, SURFACE SCIENCE 2000, Vol 457, Iss 3, pp 377- 382

115） Sonoda S; Shimizu S; Shen XQ; Hara S; Okumura H：Characterization of polarity of wurtzite GaN film grown by molecular beam epitaxy using NH₃, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2000, Vol 39, Iss 3AB, pp L202- L204

116） Sonoda S; Shimizu S; Suzuki Y; Balakrishnan K; Shirakashi J; Okumura H：Characterization of polarity of plasma-assisted molecular beam epitaxial GaN{0001} film using coaxial impact collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2000, Vol 39, Iss 2A, pp L73- L75

117） Shen XQ; Ide T; Cho SH; Shimizu M; Hara S; Okumura H; Sonoda S; Shimizu S：Essential change in crystal qualities of GaN films by controlling lattice polarity in molecular beam epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2000, Vol 39, Iss 1AB, pp L16- L18

118） Sonoda S; Shimizu S; Balakrishnan K; Okumura H：Plasma-assisted molecular beam epitaxy of GaN: In film on sapphire(0001) having the single polarity of (0001), JOURNAL OF CRYSTAL GROWTH 2000, Vol 209, Iss 2- 3, pp 364-367

119） Sonoda S; Shimizu S; Suzuki Y; Balakrishnan K; Shirakashi J; Okumura H; Nishihara T; Shinohara M：Computer simulation for analysis of lattice polarity of wurtzite GaN{0001} film by coaxial impact collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1999, Vol 38, Iss 11A, pp L1219- L1221

120） Sumiya M; Tanaka M; Ohtsuka K; Fuke S; Ohnishi T; Ohkubo I; Yoshimoto M; Koinuma H; Kawasaki M：Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 1999, Vol 75, Iss 5, pp 674- 676

121） Maki H; Ichinose N; Sekiguchi S; Ohashi N; Nishihara T; Haneda H; Tanaka J：Surface structure of ZnO single crystals analysed by ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1999, Vol 38, Iss 5A, pp 2741- 2744

122） Ohnishi T; Ohtomo A; Ohkubo I; Kawasaki M; Yoshimoto M; Koinuma H：Coaxial impact-collision ion scattering spectroscopy analysis of ZnO thin films and single crystals, MATERIALS SCIENCE AND ENGINEERING B- SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 1998, Vol 56, Iss 2-3, pp 256- 262

123） Shimizu S; Suzuki Y; Nishihara T; Hayashi S; Shinohara M：Terminating structure of plasma-assisted molecular beam epitaxial GaN{0001} film surface identified by coaxial impact collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1998, Vol 37, Iss 6B, pp L703- L705

124） Ohnishi T; Ohtomo A; Kawasaki M; Takahashi K; Yoshimoto M; Koinuma H：Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 1998, Vol 72, Iss 7, pp 824- 826

125） Ishiyama O; Nishihara T; Hayashi S; Shinohara M; Yoshimoto M; Ohnishi T; Koinuma H; Nishino S; Saraie J：Atomic scale identification of the terminating structure of compound materials by CAICISS (coaxial impact collision ion scattering spectroscopy), APPLIED SURFACE SCIENCE 1997, Vol 121, pp 163- 166

126） Ishiyama O; Nishihara T; Shinohara M; Ohtani F; Nishino S; Saraie J：Identification of the terminating structure of 6H-SiC(0001) by coaxial impact collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 1997, Vol 70, Iss 16, pp 2105- 2107

127） Ishiyama O; Shinohara M; Nishihara T; Ohtani F; Nishino S; Saraie J：Topmost surface analysis of 6H-SiC(0001) by coaxial impact collision ion scattering spectroscopy, SILICON CARBIDE AND RELATED MATERIALS 1995 1996, Vol 142, pp 485- 488

128） Nishihara T; Shinohara M; Ishiyama O; Ohtani F：Identification of topmost atom on InP(001) surface by coaxial impact collision ion scattering spectroscopy, JOURNAL OF ELECTRONIC MATERIALS 1996, Vol 25, Iss 4, pp 667- 670

129） Chakarov I; King BV; Webb RP; Smith R：Computer Simulation of CAICISS of AlAs(001), NUCLEAR INSTRUMENTS &METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1992, Vol 67, Iss 1- 4, pp 332- 334

130） Sugiyama N; Hashimoto A; Tamura M：Evaluation of the arsenic dimer structure of an arsenic stabilized gallium-arsenide surface by coaxial impact collision ion scattering spectroscopy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A- VACUUM SURFACES AND FILMS 1992, Vol 10, Iss 1, pp 29- 32

131） Kubo M; Narusawa T：Initial Stage of InAs on GaAs grown by Molecular Beam Epitaxy studied with Low- Energy Ion Scattering, APPLIED PHYSICS LETTERS 1991, Vol 59, Iss 27, pp 3577- 3579

132） Kubo M; Narusawa T：Effects of low-energy ion bombardment on GaAs molecular beam epitaxy, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1991, Vol 59, pp 332- 335

133） Katayama M; Aono M; Oigawa H; Nannichi Y; Sugahara H; Oshima M：Surface structure of InAs(001) treated with (NH₄)₂S_x solution, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1991, Vol 30, Iss 5A, pp L786- L789

134） Sugiyama N; Hashimoto A; Tamura M：In situ analysis of gallium-arsenide surfaces by coaxial impact collision ion scattering spectroscopy with an off-axis ion source, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1990, Vol 29, Iss 10, pp L1922- L1925

135） Kubo M; Narusawa T：In situ low-energy ion scattering analysis of InP surface during molecular beam epitaxy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 1990, Vol 8, Iss 4, pp 697- 700

③ Metal Oxides, Metals and Others

136） Saito A; Matsumoto H; Ohnisi S; Akai-Kasaya M; Kuwahara Y; Aono M：Structure of Atomically Smoothed LiNbO₃ (0001) Surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 2004, Vol. 43(4B): pp 2057-2060 APR 15 2004

137） Umezawa K; Ito T; Nakanishi S; Gibson WM：Metal epitaxy depending on the growth temperature during deposition, APPLIED SURFACE SCIENCE 2003, Vol 219, Issues 1-2, pp 102-106

138） Parkinson CR; Walker M; McConville CF：Reaction of atomic oxygen with a Pt(111) surface: chemical and structural determination using XPS, CAICISS and LEED, SURFACE SCIENCE 2003, Vol 545, Issues 1-2, pp 19-33

139） Ito S; Fujioka H; Ohta J; Sasaki A; Liu J; Yoshimoto M; Koinuma H; Oshima M：Low-temperature growth of AlN on nearly lattice-matched MnO substrates, APPLIED SURFACE SCIENCE 2003, Vol 216, Iss 1-4, pp 508-511

140） Morita K; Yoshii A：Ion to neutral yield ratio in near 180º backscattering of keV He⁺ ions from insulating targets, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 2003, Vol 203, pp 239-245

141） Umezawa K; Tatsuta T; Nakanishi S; Ojima K; Yoshimura M; Ueda K; Gibson WM：Layer-by-layer surfactant-induced growth of Ag on Cu(111): an impact collision ion scattering spectroscopy and scanning tunnelling microscopy study, SURFACE SCIENCE 2003, Vol 529, Iss 1-2, pp 95-106

142） Umezawa K; Takaoka H; Hirayama S; Nakanishi S; Gibson WM：A Cu(1 1 1)( √3×√3)R30°-Sb structure by impact collision ion-scattering spectroscopy, CURRENT APPLIED PHYSICS 2003, Vol 3, Iss 1, pp 71-74

143） Kawanowa H; Ozawa H; Ohtsuki M; Gotoh Y; Souda R：Structure analysis of LaAlO₃(001) surfaces by low energy neutral scattering spectroscopy, SURFACE SCIENCE 2002, Vol 506, Iss 1-2, pp 87- 92

144） Fujino T; Katayama M; Inudzuka K; Okuno T; Oura K; Hirao T：Surface hydroxyl formation on vacuum-annealed TiO₂(110), APPLIED PHYSICS LETTERS 2001, Vol 79, Iss 17, pp 2716- 2718

145） Yamada T; Choso T; Tabata K; Suzuki E：Study of the topmost surface structure of a y-cut LiNbO₃ single crystal with coaxial impact collision ion scattering spectroscopy (CAICISS), APPLIED SURFACE SCIENCE 2001, Vol 171, Iss 1- 2, pp 106- 112

146） Umezawa K; Nakanishi S; Yoshimura M; Ojima K; Ueda K; Gibson WM：Ag/Cu(111) surface structure and metal epitaxy by impact-collision ion scattering spectroscopy and scanning tunneling microscopy, PHYSICAL REVIEW B 2001, Vol 63, Iss 3, art.no.035402

147） Ishida M; Jung YC; Miura H; Koji Y; Sawada K; Yoshimoto M; Keisuke M; Takahumi M; Hideaki M：Effect of Al pre-deposition layer on the epitaxial growth of silicon on Al₂O₃/Si (111)substrates, THIN SOLID FILMS 2000, Vol 369, Iss 1-2, pp 134- 137

148） Suzuki T; Souda R：The encapsulation of Pd by the supporting TiO₂(110) surface induced by strong metal-support interactions, SURFACE SCIENCE 2000, Vol 448, Iss 1, pp 33- 39

149） Suzuki T; Souda R：Structure analysis of CsCl deposited on the MgO(001) surface by coaxial impact collision atom scattering spectroscopy (CAICASS), SURFACE SCIENCE 1999, Vol 442, Iss 2, pp 283- 290

150） Suzuki T; Hishita S; Oyoshi K; Souda R：Initial stage growth mechanisms of metal adsorbates - Ti, Zr, Fe, Ni, Ge, and Ag on MgO(001) surface, SURFACE SCIENCE 1999, Vol 442, Iss 2, pp 291- 299

151） Kawano T; Isobe T; Senna M; Nishihara T; Tanaka J：(Ba, Sr)TiO₃ solid solution thin films grown by a molecular beam epitaxy method, THIN SOLID FILMS 1999, Vol 352, Iss 1-2, pp 57- 61

152） Suzuki T; Hishita S; Oyoshi K; Souda R：Structure of α-Al₂O₃(0001) surface and Ti deposited on α- Al₂O₃(0001) substrate: CAICISS and RHEED study, SURFACE SCIENCE 1999, Vol 437, Iss 3, pp 289- 298

153） Tabata K; Choso T; Nagasawa Y：Topmost surface analysis of an MgO-dissolved LiNbO₃ single crystal with coaxial impact collision ion scattering spectroscopy, SURFACE SCIENCE 1999, Vol 435, pp 534- 537

154） Suzuki T; Souda R：Interfacial reaction during thin film growth of Ti on the MgO(001) surface, JOURNAL OF PHYSICAL CHEMISTRY B 1999, Vol 103, Iss 28, pp 5747- 5749

155） Umezawa K; Nakanishi S; Gibson WM：Surface structure and metal epitaxy: impact collision ion scattering spectroscopy studies on Au-Ni(111), SURFACE SCIENCE 1999, Vol 426, Iss 2, pp 225- 234

156） Ohnishi T; Takahashi K; Nakamura M; Kawasaki M; Yoshimoto M; Koinuma H：A-site layer terminated perovskite substrate: NdGaO₃, APPLIED PHYSICS LETTERS 1999, Vol 74, Iss 17, pp 2531- 2533

157） Lee GH; Yoshimoto M; Ohnishi T; Sasaki K; Koinuma H：Epitaxial BaTiO₃ thin films grown in unit cell layer-by-layer mode by laser molecular beam epitaxy, MATERIALS SCIENCE AND ENGINEERING B- SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 1998, Vol 56, Iss 2-3, pp 213- 217

158） Izumi M; Konishi Y; Nishihara T; Hayashi S; Shinohara M; Kawasaki M; Tokura Y：Atomically defined epitaxy and physical properties of strained La_0.6Sr_0.4MnO₃ films, APPLIED PHYSICS LETTERS 1998, Vol 73, Iss 17, pp 2497- 2499

159） Yoshimoto M; Maruta H; Ohnishi T; Sasaki K; Koinuma H：In situ determination of the terminating layer of La_0.7Sr_0.3MnO₃ thin films using coaxial impact-collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 1998, Vol 73, Iss 2, pp 187- 189

160） Ito T; Umezawa K; Nakanishi S：Epitaxial growth of Ag on Ni(111), APPLIED SURFACE SCIENCE 1998, Vol 132, pp 497- 500

161） Ishii T; Mukaida M; Nishihara T; Hayashi S; Shinohara M：Identification of surface atoms of LiGaO₂(001) substrate for hexagonal GaN film by coaxial impact collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1998, Vol 37, Iss 6A, pp L672- L674

162） Tabata K; Choso T; Murakami A; Suzuki E：Topmost surface analysis of a z-cut LiNbO₃ by coaxial impact-collision ion scattering spectroscopy, SURFACE SCIENCE 1998, Vol 404, Iss 1- 3, pp 487- 490

163） Tabata K; Choso T; Nagasawa Y：The topmost structure of annealed single crystal of LiNbO₃, SURFACE SCIENCE 1998, Vol 408, Iss 1- 3, pp 137- 145

164） Suzuki T; Hishita S; Oyoshi K; Souda R：Surface segregation of implanted ions: Bi, Eu, and Ti at the MgO(100) surface, APPLIED SURFACE SCIENCE 1998, Vol 132, pp 534- 538

165） Umezawa K; Nakanishi S; Gibson WM：Growth modes depending on the growing temperature in heteroepitaxy: Au/Ni(111), PHYSICAL REVIEW B 1998, Vol 57, Iss 15, pp 8842- 8844

166） Suzuki T; Hishita S; Oyoshi K; Souda R：Segregation of Eu implanted at the MgO(100) surface, SURFACE SCIENCE 1997, Vol 391, Iss 1-3, pp L1243- L1248

167） Choso T; Kamada M; Tabata K：The effects of heat treatments upon NO adsorption for a single crystal of LiNbO₃, APPLIED SURFACE SCIENCE 1997, Vol 121, pp 387- 390

168） Umezawa K; Nakanishi S; Yumura T; Gibson WM; Watanabe M; KidoY; Yamamoto S; Aoki Y; Naramoto H, Surface structure analysis of Ni(111)-(√3x√3)R30°-Pb by impact-collision ion scattering spectroscopy, PHYSICAL REVIEW B 1997, Vol 56, Iss 16, pp 10585- 10589

169） Noakes TCQ; Hutt DA; McConville CF; Woodruff DP：Structural investigation of ordered Sb adsorption phases on Ag(111) using coaxial impact collision ion scattering spectroscopy, SURFACE SCIENCE 1997, Vol 372, Iss 1-3, pp 117- 131

170） Fuse T; Ishiyama O; Shinohara M; Kido Y：Monte Carlo simulation of angular scan spectra for coaxial impact collision ion scattering spectroscopy (CAICISS), SURFACE SCIENCE 1997, Vol 372, Iss 1-3, pp 350- 354

171） Fuse T; Watanabe M; Kido Y; Ishiyama O; Shinohara M; Ohtani F：Monte Carlo simulation of time-of-flight spectra of coaxial impact collision ion scattering spectroscopy applied to MoS₂(0001) and SrTiO₃(001), SURFACE SCIENCE 1996, Vol 358, Iss 1- 3, pp 119- 124

172） Sung MM; Rabalais JW：Comparison of coaxial and normal incidence ion scattering, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1996, Vol 108, Iss 4, pp 389- 398

173） Duszak R; Ohtani F; Kadowaki Y; Nozoye H：Quantitative determination of the imperfectness of a cleaved MoS₂(001) surface by coaxial impact-collision ion scattering, SURFACE SCIENCE 1995, Vol 324, Iss 2-3, pp 257- 262

174） Kawasaki M; Takahashi K; Maeda T; Tsuchiya R; Shinohara M; Ishiyama O; Yonezawa T; Yoshimoto M; Koinuma H：Atomic control of the SrTiO₃ crystal surface, SCIENCE 1994, Vol 266, Iss 5190, pp 1540- 1542

175） Yoshimoto M; Maeda T; Shimozono K; Koinuma H; Shinohara M; Ishiyama O; Ohtani F：Topmost surface analysis of SrTiO₃(001) by coaxial impact-collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 1994, Vol 65, Iss 25, pp 3197- 3199

176） Kawai M; Liu ZY; Hanada T; Katayama M; Aono M; McConville CF：Layer controlled growth of oxide superconductors, APPLIED SURFACE SCIENCE 1994, Vol 82-3, pp 487- 493

177） Tanaka Y; Morishita H; Watamori M; Oura K; Katayama I：Structural study of SrTiO₃(100) surfaces by low-energy ion scattering, APPLIED SURFACE SCIENCE 1994, Vol 82-3, pp 528- 531

178） Wang Y; Teplov SV; Rabalais JW：Determination of the structure of subsurface layers by means of coaxial time-of-flight scattering and recoiling spectrometry (TOF-SARS), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1994, Vol 90, Iss 1- 4, pp 237- 242

179） Kadowaki Y; Aika K; Kondoh H; Nozoye H：Surface structure of MoS₂(001) determined by coaxial impact- collision ion scattering spectroscopy (CAICISS), SURFACE SCIENCE 1993, Vol 287, pp 396- 399

180） Nakanishi S; Kawamoto K; Fukuoka N; Umezawa K：Low-energy ion scattering analysis of the surface compositional change of Au₃Cu(001) induced by oxygen chemisorption, SURFACE SCIENCE 1992, Vol 261, Iss 13, pp 342- 348

181） Wang Y; Shi M; Rabalais JW：Coaxial scattering as a probe of surface structure - (1x2)-Pt(110) and (1x3)-Pt(110), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1992, Vol 62, Iss 4, pp 505- 512

182） Nakanishi S; Fukuoka N; Kawamoto K; Umezawa K; Teraoka Y; Nakahigashi K：Oxygen induced surface segregation of Cu on the Au_0.7Cu_0.3(100) surface, SURFACE SCIENCE 1991, Vol 247, Iss 1, pp L215- L220

④ Exploring Surface Processes by Real-time CAICISS, and Medium-Energy CAICISS

183） Fujino T; Katayama M; Yamazaki Y; Inoue S; Okuno T; Oura K：Influence of hydrogen-surfactant coverage on Ge/Si(001) heteroepitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2002, Vol 41, Iss 7A, pp L790 –L793

184） Fujino T; Okuno T; Katayama M; Oura K：Hydrogen segregation and its detrimental effect in epitaxial growth of Ge on hydrogen-terminated Si(001), JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2001, Vol 40, Iss 11A, pp L1173 -L1175

185） Fujino T; Fuse T; Ryu JT; Inudzuka K; Nakano T; Goto K; Yamazaki Y; Katayama M; Oura K：Ge thin film growth on Si(111) surface using hydrogen surfactant, THIN SOLID FILMS 2000, Vol 369, Iss 1-2, pp 25- 28

186） Kobayashi T; McConville CF; Nakamura J; Dorenbos G; Sone H; Katayama T; Aono M：Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy, DEFECTS AND DIFFUSION IN SEMICONDUCTORS 2000, Vol 183- 1, pp 207- 213

187） Fujino T; Fuse T; Tazou E; Nakano T; Inudzuka K; Goto K; Yamazaki Y; Katayama M; Oura K：In situ monitoring of hydrogen-surfactant effect during Ge growth on Si(001) using coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 2000, Vol 161, pp 419- 423

188） Kobayashi T; McConville CF; Dorenbos G; Iwaki M; Aono M：Depth profile and lattice location analysis of Sb atoms in Si/Sb(δ-doped)/Si(001) structures using medium-energy ion scattering spectroscopy, APPLIED PHYSICS LETTERS 1999, Vol 74, Iss 5, pp 673- 675

189） Fuse T; Kawamoto K; Katayama M; Oura K：In situ observation of Ge δ-layer in Si(001) using quasi medium energy ion scattering spectroscopy, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 1999, Vol 2, Iss 2, pp 159- 164

190） Fuse T; Kawamoto K; Shiizaki T; Tazou E; Katayama M; Oura K：Quasi-medium energy ion scattering spectroscopy observation of a Ge δ-doped layer fabricated by hydrogen mediated epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1998, Vol 37, Iss 5A, pp 2625- 2628

191） Fuse T; Kawamoto K; Shiizaki T; Tazou E; Katayama M; Oura K：Observation of behavior of Ge δ-doped layer in Si(001), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1998, Vol 138, pp 1080- 1085

192） Fuse T; Kawamoto K; Kujime S; Shiizaki T; Katayama M; Oura K：Quasi-medium energy ion scattering spectroscopy observation of surface segregation of Ge δ-doped layer during Si molecular beam epitaxy, SURFACE SCIENCE 1997, Vol 393, Iss 1- 3, pp L93- L98

193） Fuse T; Kawamoto K; Kujime S; Shiizaki T; Katayama M; Oura K：Quasi-medium energy ion scattering spectroscopy study of Ge δ-layer on Si(001), APPLIED SURFACE SCIENCE 1997, Vol 121, pp 218- 222

194） Tanaka Y; Morishita H; Ryu JT; Katayama I; Oura K：Thin-film growth-mode analysis by low energy ion scattering, SURFACE SCIENCE 1996, Vol 363, Iss 1- 3, pp 161- 165

195） Kawamoto K; Mori T; Kujime S; Oura K：Observation of the diffusion of Ag atoms through an a-Si layer on Si(111) by low-energy ion scattering, SURFACE SCIENCE 1996, Vol 363, Iss 1- 3, pp 156- 160

196） Katayama M; Nakayama T; Aono M; McConville CF：Influence of surfactant coverage on epitaxial growth of Ge on Si(001), PHYSICAL REVIEW B 1996, Vol 54, Iss 12, pp 8600- 8604

197） McConville CF; Noakes TCQ; Sugden S; Hucknell PK; Sofield CJ：Time-of-flight medium energy ion scattering study of epitaxial Si/Si_1-
xGe_x superlattice structures, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1996, Vol 118, Iss 1-4, pp 573- 577

198） Kobayashi T; Dorenbos G; Shimoda S; Iwaki M; Aono M：Separation of scattered ions and neutrals in medium-energy ion scattering spectroscopy, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1996, Vol 118, Iss 1-4, pp 584- 587

199） Matsui M; Uchida F; Nakagawa K; Nishida A：In situ measurement of He⁺ stopping in Si layers by low-energy ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1996, Vol 35, Iss 3, pp 1937- 1939

200） Saitoh T; Tamura M; Palmer JE; Yodo T：Atom rearrangement in Ge layer grown on Si substrate during anneal observed in real-time by coaxial impact collision ion scattering spectroscopy, JOURNAL OF CRYSTAL GROWTH 1995, Vol 150, Iss 1-4, pp 955-959

201） Sugden S; Sofield CJ; Noakes TCQ; Kubiak RAA; McConville CF：Probing the Interfacial and Subsurface Structure of Si/Si_{1- x}Ge_x Multilayers, APPLIED PHYSICS LETTERS 1995, Vol 66, Iss 21, pp 2849- 2851

202） Kawamoto K; Inari K; Mori T; Oura K：A new apparatus for impact collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1995, Vol 34, Iss 9A, pp 4917- 4919

203） Kawamoto K; Oura K：Scattering process of low-energy ions from binary compound surfaces at 180°, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1995, Vol 34, Iss 9A, pp 4929- 4931

204） Saitoh T; Tamura M; Palmer JE：Al/Ga Atom-exchange during AlAs/GaAs heterointerface formation in alternating source supply, COMPOUND SEMICONDUCTORS 1994 1995, Iss 141, pp 345- 350

205） Tamura M; Saitoh T; Sugiyama N; Hashimoto A; Ohkouchi S; Ikoma N; Morishita Y：Application of real-time low-energy ion scattering spectroscopy to heterointerface formation processes of molecular beam epitaxially grown Ⅲ-V compound semiconductors, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1994, Vol 85, Iss 1- 4, pp 404- 413

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