Publications about Coaxial Impact-Collision Ion Scattering Spectroscopy (CAICISS)

Last update: May 28, 2004

 

Mitsuhiro Katayama

katayama@ele.eng.osaka-u.ac.jp

Department of Electronic Engineering, Graduate School of Engineering, Osaka University

 

 

m‡TnReviews@

1j           •ÐŽRŒõ_, “¡–ìr–¾, ”ö‰YŒ›Ž¡˜YF‹C‘Š•µˆÍ‹C‰º‚Ì•\–ʃvƒƒZƒX‚̃CƒIƒ“ƒr[ƒ€‚»‚̏êŒv‘ª | Ge/Si(001)…‘fƒT[ƒtƒ@ƒNƒ^ƒ“ƒg”}‰îƒGƒsƒ^ƒLƒV[|, •\–ʉȊw ‘æ23Šª ‘æ12 †, 759- 766 (2002).

2j           •ÐŽRŒõ_Fh‹C‘Š•µˆÍ‹C‚É‚¨‚¯‚é•\–ʃvƒƒZƒX‚̃CƒIƒ“ƒr[ƒ€‚»‚̏êŒv‘ª–@‚ÌŠJ‘ñh, ¶ŽY‹ZpŽ ‘æ52Šª ‘æ3†, 59- 62 (2000).

3j           •ÐŽRŒõ_, Â–쐳˜aF“¯Ž²Œ^’¼Õ“˃CƒIƒ“ŽU—ƒXƒyƒNƒgƒƒƒgƒŠ, RADIOISOTOPES ‘æ44Šª ‘æ6†, 412- 428 (1995).

4j           •ÐŽRŒõ_, ’†ŽR’mM, Â–쐳˜aFCAICISS ‚É‚æ‚é•\–ʍ\‘¢ƒ‚ƒjƒ^[‚Æ‚»‚ê‚É‚æ‚é–Œ¬’·ƒRƒ“ƒgƒ[ƒ‹, •\–ʉȊw ‘æ14Šª ‘æ7†, 423- 428 (1993).

5j           Katayama M; McConville CF; Kawai M; Aono MFNovel automated method for oxide superconductor film growth,  RIKEN REVIEW 1993, Vol 2, pp 25- 26

6j           Aono M; Katayama M; Nomura EFReal-time monitoring of surface processes by a novel form of low-energy ion scattering, published in Dynamic Processes on Solid Surfaces, edited by Kenji Tamaru. Plenum Press, New York, 59-67 (1993).

7j           Â–쐳˜a, •ÐŽRŒõ_FƒCƒIƒ“ŽU—•ªŒõ‚É‚æ‚éƒGƒsƒ^ƒNƒV[‚Ì‚»‚̏ê‰ðÍ, “ú–{•¨—Šw‰ï•Òu•\–ʐV•¨Ž¿‚ƃGƒsƒ^ƒNƒV[vi”|•—ŠÙj‘æ12Í, 164- 178 (1992).

8j           •ÐŽRŒõ_, Â–쐳˜aF“¯Ž²Œ^’¼Õ“˃CƒIƒ“ŽU—•ªŒõ–@iCAICISSj, ‰ž—p•¨— ‘æ61Šª ‘æ2†, 171- 172 (1992).

9j           Katayama M; King BV; Daley RS; Williams RS; Nomura E; Aono MFSurface and interface structural analysis by coaxial impact-collision ion scattering spectroscopy (CAICISS), Springer Series in Material Science Vol. 17 (Ordering at Surfaces and Interfaces), edited by A. Yoshimori and H. Watanabe, 67- 72 (1992).

10j       •ÐŽRŒõ_, –쑺‰pˆê, Â–쐳˜aF“¯Ž²Œ^’¼Õ“˃CƒIƒ“ŽU—•ªŒõ–@iCAICISSj‚Æ‚»‚̉ž—p, •\–ʉȊw ‘æ12Šª ‘æ10†, 615- 622 (1991).

11j       •ÐŽRŒõ_, –쑺‰pˆê, Â–쐳˜aFƒCƒIƒ“ŽU—•ªŒõ‚Æ•\–ʍ\‘¢‚Ì“®“IŠÏŽ@, ƒZƒ‰ƒ~ƒbƒNƒX ‘æ26Šª ‘æ6†, 525- 530 (1991).

12j       —Ñ–ÎŽ÷, ŠÛˆä—²—Y, Ž›–{W, ’JŒûƒˆê, Šì“S•v, •›“‡Œ[‹`, –쑺‰pˆê, •ÐŽRŒõ_, Â–쐳˜aF“¯Ž²Œ`’¼Õ“˃CƒIƒ“ŽU—•ªŒõ‘•’uiCAICISSj‚ÌŠJ”­‚Æ‚»‚̉ž—p, “‡’Õ]˜_@‘æ47Šª@‘æ1†, 11- 22 (1990).

13j       Â–쐳˜a, •ÐŽRŒõ_, _’JŠi, –쑺‰pˆêF”÷¬—̈æ‚Ì‹@”\•]‰¿–@‚Æ‚»‚̉ž—p|V‚µ‚¢’ᑬƒCƒIƒ“ŽU—•ªŒõ–@|, ‰ž—p•¨— ‘æ59Šª ‘æ3†, 336- 344 (1990).

14j       Â–쐳˜a, •ÐŽRŒõ_FƒCƒIƒ“ƒr[ƒ€‚É‚æ‚é•\–ʍ\‘¢‰ðÍ, •\–ʉȊw ‘æ10Šª ‘æ10†, 676- 685 (1989).

15j       Â–쐳˜a, •ÐŽRŒõ_F’PŒ´Žq‘w‚ÌŒ´Žq\‘¢, ‰ž—p•¨— ‘æ57Šª ‘æ11†, 1686- 1697 (1988).

 

m‡UnInstrumentation and Methods

16j       Katayama M; Fujino T; Yamazaki Y; Inoue S; Ryu JT; Oura KFCoaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis for in situ monitoring of surface processes in gas phase atmosphere,  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2001, Vol 40, Iss 6A,  pp L576- L579

17j       Fujino T; Katayama M; Yamazaki Y; Inoue S; Ryu JT; Oura KFIon scattering and recoiling spectroscopy for real time monitoring of surface processes in a gas phase atmosphere, SURFACE REVIEW AND LETTERS 2000, Vol 7, Iss 5- 6, pp 657-659

18j       Katayama M; Nakayama T; McConville CF; Aono MFSurface and interface structural control using coaxial impact-collision ion scattering spectroscopy (CAICISS), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1995, Vol 99, Iss 1- 4, pp 598- 601

19j       Aono M; Katayama M; Nomura EFExploring surface structures by coaxial impact collision ion scattering spectroscopy (CAICISS), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1992, Vol 64, Iss 1- 4, pp 29- 37

20j       Charatan RM; Williams RSFScattering of low-energy ions from surfaces at 180‹, SURFACE SCIENCE 1992, Vol 264, Iss 1- 2, pp L207- L212

21j       King BV; Oconnor DJ; Shen Y; Macdonald RJ; Katayama M; Aono MFLEIS for Structure Determination of Surfaces and Thin Films, APPLIED SURFACE SCIENCE 1991, Vol 48- 9, pp 246- 253

22j       Kamiya I; Katayama M; Nomura E; Aono MFSeparation of Scattered Ions and Neutrals in CAICISS with an Acceleration Tube, SURFACE SCIENCE 1991, Vol 242, Iss 1- 3, pp 404- 409

23j       Williams RS; Kato M; Daley RS; Aono MFScattering Cross Sections for Ions Colliding Sequentially with Two Target Atoms, SURFACE SCIENCE 1990, Vol 225, Iss 3, pp 355- 366

24j       Aono M; Katayama MFA Novel method for real-time monitoring of molecular beam epitaxy (MBE) processes,  PROCEEDINGS OF THE JAPAN ACADEMY 1989, Vol 65, Ser. B, No.6, pp 137- 141

25j       Kato M; Katayama M; Chasse T; Aono MFChanneling and backscattering of low energy ions, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1989, Vol 39, pp 30- 34

26j       Aono M; Katayama M; Nomura E; Choi D; Chasse T; Kato MFRecent developments in low-energy ion scattering spectroscopy (ISS) for surface structural analysis, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1989, Vol 37-38, pp 264-269

27j       Katayama M; Nomura E; Kanekama N; Soejima H; Aono MFCoaxial impact-collision ion scattering spectroscopy (CAICISS): a novel method for surface structure analysis, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1988, Vol 33, pp 857- 861

 

m‡VnSurface Analysis by CAICISS

‡@     Surface Structures and Thin Films on Silicon

28j       Tsushima R; Katayama M; Fujino T; Shindo M; Okuno T; Oura KFTemperature dependence of flat Ge/Si(001) heterostructures as observed by CAICISSh, APPLIED SURFACESCIENCE 2003, Vol 216 Iss 1-4, pp 19-23

29j       Kim JY; Park JY, Seo JH; Whang CH, Kang HJ; Kim SS; Choi DS; Chae KHFAtomic structure of Cs layer grown on Si(0 0 1)(2 ~ 1) surface at room temperature, SURFACE SCIENCE 2003, Vol 531, Iss 1, pp. L340-L346

30j       Fujino T; Katayama M; Inoue S; Tatsumi A; Horikawa T; Oura KFQuantitative analysis of hydrogen-induced Si segregation on Ge-Covered Si(001) surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2003, Vol 42, Iss 5A, pp. L485-L488

31j       Oura K; Katayama MFIon beam as a probe to study the behavior of hydrogen on silicon surfaces, CURRENT APPLIED PHYSICS 2003, Vol 3, Iss 1, pp 39-44

32j       Kishi N; Morita KFStructure analysis of the Si(111)-root-3x root 3-Sb surface by means of CAICISS combined with LEED-AES-RBS techniques, CURRENT APPLIED PHYSICS 2003, Vol 3, Iss 1, pp 57-60

33j       Katayama MFExploring surface processes by coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis, CURRENT APPLIED PHYSICS 2003, Vol 3, Iss 1, pp 65-69

34j       Kim JY; Park JY; Seo JH; Whang CN; Kim SS; Choi DS; Kang HJ; Chae KHFAtomic structure of Cs grown on Si(001)(2x1) surface by coaxial impact collision ion scattering spectroscopy, CURRENT APPLIED PHYSICS 2003, Vol 3, Iss 1, pp 83-88

35j       Kim KS; Choi JU; Cho YJ; Kang HJ FAtomic structure of Si(113) surface studied by coaxial impact collision ion scattering spectroscopy, SURFACE AND INTERFACE ANALYSIS 2003, Vol 35, Iss 1, pp 80-83

36j       Fujino T; Katayama M; Okuno T; Shindo M; Tsushima R; Oura KFThermal stability in the morphology of Ge films on Si(001) grown by hydrogen-surfactant-mediated epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2003, Vol 42, Iss 1AB, pp. L63-L66

37j       Morita K; Kishi NFRecent progress in backscattering study of low energy light ions from monolayer metal adsorbates on solid surfaces by TOF-CAICISS analysis, IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA 2002, Vol 66, Iss 7, pp 1008-1011

38j       Ryu JT; Katayama M; Oura KFSn Thin film growth on Si(111) surface studied by CAICISS, SURFACE SCIENCE 2002, Vol 515, pp 199-204

39j       Kishi N; Morita KFDifferential scattering cross-sections,  inelastic energy losses and ion fractions in backscattering of keV He+ ions from monolayer metal adsorbates on solid surfaces measured by means of CAICISS, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 2002, Vol 193, pp 419-432

40j       Ikeuchi T; Souda R; Yamamoto SFAtomic and electronic structures of barium oxide on Si(001) studied by metastable impact electron spectroscopy (MIES) and coaxial impact collision ion scattering spectroscopy (CAICISS), APPLIED SURFACE SCIENCE 2002, Vol 191, Iss 1-4, pp 261-265

41j       Ryu JT; Fujino T; Katayama M; Kim YB; Oura KFInfluence of interface structures on Sn thin film growth on Si(111) surface, APPLIED SURFACE SCIENCE 2002, Vol 190, pp 139-143

42j       Yuhara J; Nakamura D; Soda K; Morita KFSi(111) ã7xã3-(Pb, Sn) surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopy, SURFACE SCIENCE 2001, Vol 482, pp 1374- 1378

43j       Ikeda K; Yanase J; Sugahara S; Uchida Y; Matsumura MFCharacterization of initial one monolayer growth of Ge on Si(100) and Si on Ge(100), APPLIED SURFACE SCIENCE 2001, Vol 175, pp 1- 5

44j       Cho WS; Kim JY; Kim SS; Choi DS; Jeong K; Lyo IW; Whang CN; Chae KHFAtomic structure of Ba layer on Si(001)-(2x1) surface studied by low energy ion scattering, SURFACE SCIENCE 2001, Vol 476, Iss 3, pp L259- L266

45j       Morita K; Kishi N; Grigoriev A; Masuzaki S; Muroga TFTOF analysis of reflection of low-energy light ions from solid targets using coaxial impact collision ion scattering spectroscopy (CAICISS), JOURNAL OF NUCLEAR MATERIALS 2001, Vol 290, pp 126- 130

46j       Furusawa M; Tashiro J; Sasaki A; Nakajima K; Takakura M; Chikyow T; Ahmet P; Yoshimoto MFIn situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si(111) by coaxial impact-collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 2001, Vol 78, Iss 13, pp 1838- 1840

47j       Yuhara J; Matsuda K; Hattori Y; Morita KFStudies on thermal property and atomic structure of the (Bi, Sb)/Si(111) surface, APPLIED SURFACE SCIENCE 2000, Vol 162, pp 368- 374

48j       Wasekura M; Higashi M; Ikeda H; Sakai A; Zaima S; Yasuda YFA study on initial oxidation of Si(100)-2x1 surfaces by coaxial impact collision ion scattering spectroscopy, APPLIED SURFACE SCIENCE 2000, Vol 159, pp 35- 40

49j       Cho WS; Kim JY; Park NG; Lyo IW; Jeong K; Kim SS; Choi DS; Whang CN; Chae KHFAtomic structure of ultrathin Co layer on Si(001)(2 x 1) at room temperature, SURFACE SCIENCE 2000, Vol 453, Iss 1-3, pp L309- L314

50j       Ryu JT; Kubo O; Fujino T; Fuse T; Harada T; Kawamoto K; Katayama M; Saranin AA; Zotov AV; Oura KFAtomic-hydrogen-induced self-organization of Si(111)ã3 xã3-In surface phase studied by CAICISS and STM, SURFACE SCIENCE 2000, Vol 447, Iss 1-3, pp 117- 125

51j       Cho WS; Kim JY; Park NG; Chae KH; Kim YW; Lyo IW; Kim SS; Choi DS; Whang CNFAtomic structure of Ag grown on Si(001)(2 x 1) at high temperature, SURFACE SCIENCE 1999, Vol 439, Iss 1-3, pp L792- L798

52j       Fuse T; Fujino T; Ryu JT; Katayama M; Oura KFTotal cross section of electron stimulated desorption of hydrogen from hydrogen-terminated Ge/Si(001) as observed by time of flight elastic recoil detection analysis, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1999, Vol 38, Iss 5A, pp 2878- 2880

53j       Matsui M; Uchida F; Tokunaga T; Enomoto H; Umezawa TFLow-energy ion scattering spectroscopic analysis of structural damage in Si substrate under ultrathin SiO2 after gate etching, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1999, Vol 38, Iss 4A, pp 2124- 2130

54j       Fuse T; Ryu JT; Fujino T; Inudzuka K; Katayama M; Oura KFAdsorption of H on the Ge/Si(001) surface as studied by time-of-flight elastic recoil detection analysis and coaxial impact collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1999, Vol 38, Iss 3A, pp 1359- 1362

55j       Ryu JT; Fuse T; Kubo O; Fujino T; Tani H; Harada T; Saranin AA; Zotov AV; Katayama M; Oura KFAdsorption of atomic hydrogen on the Si(001)4x3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 1999, Vol 17, Iss 3, pp 983- 988

56j       Fuse T; Fujino T; Ryu JT; Katayama M; Oura KFElectron-stimulated desorption of hydrogen from H/Si(001)-1x1 surface studied by time-of-flight elastic recoil detection analysis, SURFACE SCIENCE 1999, Vol 420, Iss 1, pp 81- 86

57j       Park NG; Kim YW; Cho WS; Kim JY; Choi DS; Jeong K; Chae KH; Whang CNFAtomic structure of two- dimensional Ag layer grown on Si(001)-(2x1) at room temperature, SURFACE SCIENCE 1998, Vol 414, Iss 1- 2, pp L945- L950

58j       Ryu JT; Kui K; Noda K; Katayama M; Oura KFThe effect of hydrogen termination on In growth on Si(100) surface, SURFACE SCIENCE 1998, Vol 401, Iss 3, pp L425- L431

59j       Matsui M; Uchida F; Katsuyama K; Tokunaga T; Kojima MFLow-energy ion scattering measurement of near- surface damage induced by the SiO2 dry-etching process, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1998, Vol 37, Iss 4A, pp 2043- 2050

60j       Ryu JT; Kui K; Noda K; Katayama M; Oura KFCAICISS studies of atomic-hydrogen-induced structural changes@of the Sb terminated Si surfaces, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1998, Vol 138, pp 1102- 1107

61j       Dixon RJ; McConville CF; Jenkins SJ; Srivastava GPFStructure and stability of the Si(001)c(4x4)-Sb surface, PHYSICAL REVIEW B 1998, Vol 57, Iss 20, pp R12701- R12704

62j       Kim YW; Park NG; Cho WS; Chae KH; Whang CN; Kim KS; Kim SS; Choi DSFAtomic structures of Ag islands on Si(001)(2x1), SURFACE SCIENCE 1998, Vol 396, Iss 1- 3, pp 295- 303

63j       Ryu JT; Kui K; Katayama M; Oura KFAtomic-hydrogen-induced structural change of the Si(100)-(2x1)-Sb surface studied by TOF- ICISS, APPLIED SURFACE SCIENCE 1997, Vol 121, pp 223- 227

64j       Ikegami H; Ikeda H; Zaima S; Yasuda YFThermal stability of ultrathin CoSi2 films on Si(100)-2x1 surfaces, APPLIED SURFACE SCIENCE 1997, Vol 117, pp 275- 279

65j       Ryu JT;@Kui K;@Noda K;@Katayama M;@Oura KFAdsorption of atomic hydrogen on the Si(100)-(2x1)-Sb surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1997, Vol 36, Iss 7A, pp 4435- 4439

66j       Ryu JT; Kui K; Tanaka Y; Katayama M; Oura K; Katayama IFTOF-ICISS observation of Pb growth on the Si(111)ã3xã3-Ag surface, APPLIED SURFACE SCIENCE 1997, Vol 114, pp 393- 397

67j       Noakes TCQ; McConville CFFCoaxial impact collision ion scattering spectroscopy studies of Sb adsorption on the two-domain (100) surface of silicon, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1996, Vol 118, Iss 1- 4, pp 462- 466

68j       Kim KS; Kim YW; Park NG;Cho WS; Choi DS; Kim SS; Whang CNFGrowth mode of Au layer on Si(001), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1996, Vol 117, Iss 3, pp 289- 294

69j       Matsui M; Uchida F; Nakagawa K; Nishida AFMeasurement of Si(100) surface morphology by low energy ion scattering spectroscopy, SURFACE SCIENCE 1996, Vol 358, Iss 1- 3, pp 82- 86

70j       Tanaka Y; Morishita H; Ryu JT; Katayama I; Oura KFThe initial stage of Pb thin film growth on Si(111) surface studied by TOF-ICISS, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1996, Vol 118, Iss 1- 4, pp 530- 532

71j       Oura K; Tanaka Y; Morishita H; Shoji F; Katayama IFLow-energy ion scattering study of hydrogen-induced reordering of Pb monolayer films on Si(111) surfaces, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1994, Vol 85, Iss 1- 4, pp 439- 442

72j       Hashimoto A; Saitoh T; Tamura MFIn-situ observations of As atoms at step sites of vicinal Si(100) surfaces by coaxial impact collision scattering spectroscopy, JOURNAL OF APPLIED PHYSICS 1994, Vol 76, Iss 3, pp 1592-1597

73j       Shinohara M; Saraie J; Ishiyama O; Ohtani F; Mitamura SFCoaxial impact collision ion scattering spectroscopy measurements of As/Si(100) structure prepared by ionized cluster beam method, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1993, Vol 32, Iss 10, pp 4485- 4489

74j       Wang Y; Teplov SV; Zaporozchenko OS; Bykov V; Rabalais JWFCoaxial scattering probe of the surface and subsurface structure of the Si(100)-(2x1) and Si(100)-(1x1)-H phases, SURFACE SCIENCE 1993, Vol 296, Iss 2, pp 213- 223

75j       Hashizume T; Katayama M; Jeon DR; Aono M; Sakurai TFThe absolute coverage of K on the Si(111)-3x1-K surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1993, Vol 32, Iss 9A, pp L1263- L1265

76j       Chaudhury S; Williams RS; Katayama M; Aono MFQuantitative analysis of the azimuthal dependence of ion  scattering from Si(111)- (ã3xã3)R30‹- Ag, SURFACE SCIENCE 1993, Vol 294, Iss 1-2, pp 93- 98

77j       Kinoshita T; Tanaka Y; Sumitomo K; Shoji F; Oura K; Katayama IFHydrogen-induced reconstruction of Si(111)- ã3-Ag surface studied by TOF-ICISS, APPLIED SURFACE SCIENCE 1992, Vol 60-1, pp 183- 189

78j       Katayama M; King BV; Nomura E; Aono MFStructure analysis of the CaF2/Si(111) interface in its initial stage of formation by coaxial impact-collision ion scattering spectroscopy (CAICISS), PROGRESS OF THEORETICAL PHYSICS SUPPLEMENT 1991, Iss 106, pp 315- 320

79j       Hashimoto A ;Sugiyama N; Tamura MFIn situ characterization of the initial growth stage of GaAs on Si by coaxial impact-collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1991, Vol 30, Iss 12B, pp 3755- 3758

80j       Katayama M; King BV; Nomura E; Aono MFStructural analysis of the CaF2/Si(111) interface by coaxial impact- collision ion scattering spectroscopy (CAICISS), VACUUM 1991, Vol 42, Iss 4, pp 321- 321

81j       Oura K; Sumitomo K; Kobayashi T; Kinoshita T; Tanaka Y; Shoji F; Katayama IFAdsorption of H on Si(111)-  ã3xã3-Ag - evidence for Ag(111) agglomerates formation, SURFACE SCIENCE 1991, Vol 254, Iss 1-3, pp L460- L464

82j       Sumitomo K; Tanaka K; Katayama I; Shoji F; Oura KFTOF ICISS study of surface damage formed by Ar ion bombardment on Si(100), SURFACE SCIENCE 1991, Vol 242, Iss 1-3, pp 90- 94

83j       Katayama M; Williams RS; Kato M; Nomura E; Aono MFStructure analysis of the Si(111)ã3xã3R30‹- Ag surface, PHYSICAL REVIEW LETTERS 1991, Vol 66, Iss 21, pp 2762- 2765

84j       King BV; Katayama M; Aono M; Daley RS; Williams RSFAnalysis of CaF2-Si(111) using coaxial impact-collision ion scattering spectroscopy, VACUUM 1990, Vol 41, Iss 4- 6, pp 938- 940

85j       Sumitomo K; Tanaka K; Izawa Y; Katayama I; Shoji F; Oura K; Hanawa TFStructural study of Ag overlayers depositrd on a Si(111) substrate by impact-collision ion scattering spectroscopy with time-of-flight detection,  APPLIED SURFACE SCIENCE 1989, Vol 41/42, pp 112-117

86j       Sumitomo K; Oura K; Katayama I; Shoji F; Hanawa TFA TOF-ISS/ERDA apparatus for solid surface analysis,  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1988, Vol 33, pp 871-875

 

‡A     Compound SemiconductorsiSiC, GaN, ZnO, InAs, GaAs, InPj 

87j       Yamaguchi, K; Tomioka, H; Sato, T; Souda, R; Suemasu, T; Hasegawa, FF Influence of AlN growth conditions on the polarity of GaN grown on AlN/Si(111) by metalorganic molecular beam epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Vol 43 (2A): L151-L153 FEB 1 2004

88j       Zhang BP; Manh LH; Wakatsuki K; Ohnishi T; Lippmaa M; Usami N; Kawasaki M; Segawa YFEpitaxial growth and polarity of ZnO films on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 2003, Vol 42, Iss 4B, pp 2291-2295

89j       Yoshikawa A; Xu KFIn situ investigation for polarity-controlled epitaxy processes of GaN and AlN in MBE and MOVPE growth, OPTICAL MATERIALS 2003, Vol 23, Iss 1-2, pp 7-14

90j       Abe H; Eryu O; Kogi O; Nakashima KFElectrical properties of high-dose nitrogen-implanted and rapid thermal annealed 6H–SiC, NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol 206, pp 960-964

91j       Zhang BP; Manh L; Wakatsuki K; Tamura K; Ohnishi T; Lippma M; Usami N; Kawasaki M; Koinuma H; Segawa YFIn-plane orientation and polarity of ZnO epitaxial films on As-polished sapphire (alpha-Al2O3) (0001) substrates grown by metal organic chemical vapor deposition, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 2003, Vol 42, Iss 3B, pp L264-L266

92j       Okumura H; Shimizu M; Shen XQ; Ide TFPolarity control in MBE growth of III-nitrides, and its device application, CURRENT APPLIED PHYSICS 2002, Vol 2, Iss 4, pp 305-310

93j       Abe K; Sumitomo M; Sumi T; Eryu O; Nakashima KFEffects of surface treatments of 6H-SiC upon metal-SiC interfaces, SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS 2002,  Vol 389-3, pp 909-912

94j       Du XL; Murakami M; Iwaki H; Yoshikawa AFComplete elimination of multi-angle rotation domains in ZnO epilayers grown on (0001) sapphire substrate, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 2002, Vol 192, Iss 1, pp 183-188

95j       Lim DH; Xu K; Arima S; Yoshikawa A; Takahashi KFPolarity inversion of GaN films by trimethyl-aluminum preflow in low-pressure metalorganic vapor phase epitaxy growth, JOURNAL OF APPLIED PHYSICS 2002,  Vol 91, Iss 10, pp 6461-6464

96j       Hong SK; Hanada T; Chen YF; Ko HJ; Yao T; Imai D; Araki K; Shinohara MFControl of polarity of heteroepitaxial ZnO films by interface engineering, APPLIED SURFACE SCIENCE 2002, Vol 190, Iss 1-4, pp 491-497

97j       Ohta J; Fujioka H; Furusawa M; Sasaki A; Yoshimoto M; Koinuma H; Sumiya M; Oshima MFCAICISS characterization of GaN films grown by pulsed laser deposition, JOURNAL OF CRYSTAL GROWTH 2002,  Vol 237,  pp 1153-1157

98j       Okuno T; Fujino T; Shindo; Katayama M; Oura K; Sonoda S; Shimizu SFInfluence of Mn incorporation on molecular beam epitaxial growth of GaMnN film, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2002, Vol 41, Iss 4A, pp L415 - L417

99j       Sumiya M; Yoshimura K; Ogusu N; Fuke S; Mizuno K; Yoshimoto M; Koinuma H; Romano LTFEffect of buffer-layer engineering on the polarity of GaN films, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 2002, Vol. 20 (2), pp.456-458

100j    Hong SK; Hanada T; Ko HJ; Chen YF; Yao T; Imai D; Araki K; Shinohara M; Saitoh K; Terauchi MFControl of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN,  PHYSICAL REVIEW B 2002, Vol 65, Iss 11, art. no. 115331

101j    Hong SK; Chen Y; Ko HJ; Yao TFInterface engineering in ZnO epitaxy, PHYSICA STATUS SOLIDI B-BASIC RESEARCH 2002, Vol 229, Iss 2, pp 803-813

102j    Hasegawa F; Namerikawa M; Takahashi O; Sato T; Souda RFGa polarity preference in halide vapor phase epitaxy of GaN on a GaAs (111)B: As polar substrate, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 2001, Vol 40, Iss 12B, pp L1352-L1354

103j    Y; Tanabe Y; Yamaguchi T; Teraguchi N; Suzuki A; Araki T; Nanishi YFPolarity of high-quality indium nitride grown by RF molecular beam epitaxy, PHYSICA STATUS SOLIDI B-BASIC RESEARCH 2001, Vol 228, Iss 1,  pp 13-16

104j    Maki H; Ichinose N; Ohashi N; Haneda H; Tanaka JFThe relaxation of the ZnO single crystals (0001) surface, BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS 2000, Vol 78-79, pp 381- 386

105j    Hong SK; Hanada T; Makino H; Ko HJ; Chen YF; Yao T; Tanaka A; Sasaki H; Sato S; Imai D; Araki K; Shinohara MFZnO epilayers on GaN templates: Polarity control and valence band offset, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 2001, Vol 19, Iss 4, pp 1429- 1433

106j    Fujino T; Fuse T; Ryu JT; Inudzuka K; Yamazaki Y; Katayama M; Oura KFObservation of hydrogen adsorption on 6H-SiC(0001)surface, APPLIED SURFACE SCIENCE 2001, Vol 169, pp 113- 116

107j    Ide T; Shimizu M; Shen XQ; Hara S; Okumura H; Nemoto TFAchievement of MBE-grown GaN heteroepitaxial layer with (0001) Ga-polarity and improved quality by In exposure, SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 &2 2000, Vol 338-3, pp 1459- 1462

108j    Fujino T; Fuse T; Ryu JT; Inudzuka K; Yamazaki Y; Katayama M; Oura KFStructural analysis of 6H-SiC(0001)ã3xã3 reconstructed surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 2000, Vol 39, Iss 11, pp 6410- 6412

109j    Hong SK; Hanada T; Ko HJ; Chen Y; Yao T; Imai D; Araki K; Shinohara MFControl of polarity of ZnO films grown by plasma-assisted molecular beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates, APPLIED PHYSICS LETTERS 2000, Vol 77, Iss 22, pp 3571- 3573

110j    Sumiya M; Nakamura S; Chichibu SF; Mizuno K; Furusawa M; Yoshimoto MFStructural analysis of InxGa1- xN single quantum wells by coaxial impact collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 2000, Vol 77, Iss 16, pp 2512- 2514

111j    Shen XQ; Ide T; Cho SH; Shimizu M; Hara S; Okumura H; Sonoda S; Shimizu SFRealization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH 2000, Vol 218, Iss 2- 4, pp 155-160

112j    Fujino T; Fuse T; Ryu JT; Inudzuka K; Yamazaki Y; Katayama M; Oura KFAdsorption of atomic hydrogen on Ag-covered 6H-SiC(0001) surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 2000, Vol 39, Iss 7B, pp 4340- 4342

113j    Li DS; Sumiya M; Yoshimura K; Suzuki Y; Fukuda Y; Fuke SFCharacteristics of the GaN polar surface during an etching process in KOH solution, PHYSICA STATUS SOLIDI A- APPLIED RESEARCH 2000, Vol 180, Iss 1, pp 357- 362

114j    Maki H; Ichinose N; Ohashi N; Haneda H; Tanaka JFThe lattice relaxation of ZnO single crystal (0001) surface,  SURFACE SCIENCE 2000, Vol 457, Iss 3, pp 377- 382

115j    Sonoda S; Shimizu S; Shen XQ; Hara S; Okumura HFCharacterization of polarity of wurtzite GaN film grown by molecular beam epitaxy using NH3, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2000, Vol 39, Iss 3AB, pp L202- L204

116j    Sonoda S; Shimizu S; Suzuki Y; Balakrishnan K; Shirakashi J; Okumura HFCharacterization of polarity of plasma-assisted molecular beam epitaxial GaN{0001} film using coaxial impact collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2000, Vol 39, Iss 2A, pp L73- L75

117j    Shen XQ; Ide T; Cho SH; Shimizu M; Hara S; Okumura H; Sonoda S; Shimizu SFEssential change in crystal qualities of GaN films by controlling lattice polarity in molecular beam epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2000, Vol 39, Iss 1AB, pp L16- L18

118j    Sonoda S; Shimizu S; Balakrishnan K; Okumura HFPlasma-assisted molecular beam epitaxy of GaN: In film on sapphire(0001) having the single polarity of (0001), JOURNAL OF CRYSTAL GROWTH 2000, Vol 209, Iss 2- 3, pp 364-367

119j    Sonoda S; Shimizu S; Suzuki Y; Balakrishnan K; Shirakashi J; Okumura H; Nishihara T; Shinohara MFComputer simulation for analysis of lattice polarity of wurtzite GaN{0001} film by coaxial impact collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1999, Vol 38, Iss 11A, pp L1219- L1221

120j    Sumiya M; Tanaka M; Ohtsuka K; Fuke S; Ohnishi T; Ohkubo I; Yoshimoto M; Koinuma H; Kawasaki MFAnalysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 1999, Vol 75, Iss 5, pp 674- 676

121j    Maki H; Ichinose N; Sekiguchi S; Ohashi N; Nishihara T; Haneda H; Tanaka JFSurface structure of ZnO single crystals analysed by ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1999, Vol 38, Iss 5A, pp 2741- 2744

122j    Ohnishi T; Ohtomo A; Ohkubo I; Kawasaki M; Yoshimoto M; Koinuma HFCoaxial impact-collision ion scattering spectroscopy analysis of ZnO thin films and single crystals, MATERIALS SCIENCE AND ENGINEERING B- SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 1998, Vol 56, Iss 2-3, pp 256- 262

123j    Shimizu S; Suzuki Y; Nishihara T; Hayashi S; Shinohara MFTerminating structure of plasma-assisted molecular beam epitaxial GaN{0001} film surface identified by coaxial impact collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1998, Vol 37, Iss 6B, pp L703- L705

124j    Ohnishi T; Ohtomo A; Kawasaki M; Takahashi K; Yoshimoto M; Koinuma HFDetermination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 1998, Vol 72, Iss 7, pp 824- 826

125j    Ishiyama O; Nishihara T; Hayashi S; Shinohara M; Yoshimoto M; Ohnishi T; Koinuma H; Nishino S; Saraie JFAtomic scale identification of the terminating structure of compound materials by CAICISS (coaxial impact collision ion scattering spectroscopy), APPLIED SURFACE SCIENCE 1997, Vol 121, pp 163- 166

126j    Ishiyama O; Nishihara T; Shinohara M; Ohtani F; Nishino S; Saraie JFIdentification of the terminating structure of 6H-SiC(0001) by coaxial impact collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 1997, Vol 70, Iss 16, pp 2105- 2107

127j    Ishiyama O; Shinohara M; Nishihara T; Ohtani F; Nishino S; Saraie JFTopmost surface analysis of 6H-SiC(0001) by coaxial impact collision ion scattering spectroscopy, SILICON CARBIDE AND RELATED MATERIALS 1995 1996, Vol 142, pp 485- 488

128j    Nishihara T; Shinohara M; Ishiyama O; Ohtani FFIdentification of topmost atom on InP(001) surface by coaxial impact collision ion scattering spectroscopy, JOURNAL OF ELECTRONIC MATERIALS 1996, Vol 25, Iss 4, pp 667- 670

129j    Chakarov I; King BV; Webb RP; Smith RFComputer Simulation of CAICISS of AlAs(001), NUCLEAR INSTRUMENTS &METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1992, Vol 67, Iss 1- 4, pp 332- 334

130j    Sugiyama N; Hashimoto A; Tamura MFEvaluation of the arsenic dimer structure of an arsenic stabilized gallium-arsenide surface by coaxial impact collision ion scattering spectroscopy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A- VACUUM SURFACES AND FILMS 1992, Vol 10, Iss 1, pp 29- 32

131j    Kubo M; Narusawa TFInitial Stage of InAs on GaAs grown by Molecular Beam Epitaxy studied with Low- Energy Ion Scattering, APPLIED PHYSICS LETTERS 1991, Vol 59, Iss 27, pp 3577- 3579

132j    Kubo M; Narusawa TFEffects of low-energy ion bombardment on GaAs molecular beam epitaxy, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1991, Vol 59, pp 332- 335

133j    Katayama M; Aono M; Oigawa H; Nannichi Y; Sugahara H; Oshima MFSurface structure of InAs(001) treated with (NH4)2Sx solution, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1991, Vol 30, Iss  5A, pp L786- L789

134j    Sugiyama N; Hashimoto A; Tamura MFIn situ analysis of gallium-arsenide surfaces by coaxial impact collision ion scattering spectroscopy with an off-axis ion source, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1990, Vol 29, Iss 10, pp L1922- L1925

135j    Kubo M; Narusawa TFIn situ low-energy ion scattering analysis of InP surface during molecular beam epitaxy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 1990, Vol 8, Iss 4, pp 697- 700

 

‡B Metal Oxides, Metals and Others

136j    Saito A; Matsumoto H; Ohnisi S; Akai-Kasaya M; Kuwahara Y; Aono MFStructure of Atomically Smoothed LiNbO3 (0001) Surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 2004, Vol. 43(4B): pp 2057-2060 APR 15 2004

137j    Umezawa K; Ito T; Nakanishi S; Gibson WMFMetal epitaxy depending on the growth temperature during deposition, APPLIED SURFACE SCIENCE 2003, Vol 219, Issues 1-2, pp 102-106

138j    Parkinson CR; Walker M; McConville CFFReaction of atomic oxygen with a Pt(111) surface: chemical and structural determination using XPS, CAICISS and LEED, SURFACE SCIENCE 2003, Vol 545, Issues 1-2, pp 19-33

139j    Ito S; Fujioka H; Ohta J; Sasaki A; Liu J; Yoshimoto M; Koinuma H; Oshima MFLow-temperature growth of AlN on nearly lattice-matched MnO substrates, APPLIED SURFACE SCIENCE 2003, Vol 216, Iss 1-4, pp 508-511

140j    Morita K; Yoshii AFIon to neutral yield ratio in near 180º backscattering of keV He+ ions from insulating targets, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 2003, Vol 203, pp 239-245

141j    Umezawa K; Tatsuta T; Nakanishi S; Ojima K; Yoshimura M; Ueda K; Gibson WMFLayer-by-layer surfactant-induced growth of Ag on Cu(111): an impact collision ion scattering spectroscopy and scanning tunnelling microscopy study, SURFACE SCIENCE 2003, Vol 529, Iss 1-2, pp 95-106

142j    Umezawa K; Takaoka H; Hirayama S; Nakanishi S; Gibson WMFA Cu(1 1 1)( ã3~ã3)R30‹-Sb structure by impact collision ion-scattering spectroscopy, CURRENT APPLIED PHYSICS 2003, Vol 3, Iss 1, pp 71-74

143j    Kawanowa H; Ozawa H; Ohtsuki M; Gotoh Y; Souda RFStructure analysis of LaAlO3(001) surfaces by low energy neutral scattering spectroscopy, SURFACE SCIENCE 2002, Vol 506, Iss 1-2, pp 87- 92

144j    Fujino T; Katayama M; Inudzuka K; Okuno T; Oura K; Hirao TFSurface hydroxyl formation on vacuum-annealed TiO2(110), APPLIED PHYSICS LETTERS 2001, Vol 79, Iss 17, pp 2716- 2718

145j    Yamada T; Choso T; Tabata K; Suzuki EFStudy of the topmost surface structure of a y-cut LiNbO3 single crystal with coaxial impact collision ion scattering spectroscopy (CAICISS), APPLIED SURFACE SCIENCE 2001, Vol 171, Iss 1- 2, pp 106- 112

146j    Umezawa K; Nakanishi S; Yoshimura M; Ojima K; Ueda K; Gibson WMFAg/Cu(111) surface structure and metal epitaxy by impact-collision ion scattering spectroscopy and scanning tunneling microscopy, PHYSICAL REVIEW B 2001, Vol 63, Iss 3, art.no.035402

147j    Ishida M; Jung YC; Miura H; Koji Y; Sawada K; Yoshimoto M; Keisuke M; Takahumi M; Hideaki MFEffect of Al pre-deposition layer on the epitaxial growth of silicon on Al2O3/Si (111)substrates, THIN SOLID FILMS 2000, Vol 369, Iss 1-2, pp 134- 137

148j    Suzuki T; Souda RFThe encapsulation of Pd by the supporting TiO2(110) surface induced by strong metal-support interactions, SURFACE SCIENCE 2000, Vol 448, Iss 1, pp 33- 39

149j    Suzuki T; Souda RFStructure analysis of CsCl deposited on the MgO(001) surface by coaxial impact collision atom scattering spectroscopy (CAICASS), SURFACE SCIENCE 1999, Vol 442, Iss 2, pp 283- 290

150j    Suzuki T; Hishita S; Oyoshi K; Souda RFInitial stage growth mechanisms of metal adsorbates - Ti, Zr,  Fe, Ni,  Ge,  and Ag on MgO(001) surface, SURFACE SCIENCE 1999, Vol 442, Iss 2, pp 291- 299

151j    Kawano T; Isobe T; Senna M; Nishihara T; Tanaka JF(Ba, Sr)TiO3 solid solution thin films grown by a molecular beam epitaxy method, THIN SOLID FILMS 1999, Vol 352, Iss 1-2, pp 57- 61

152j    Suzuki T; Hishita S; Oyoshi K; Souda RFStructure of ƒ¿-Al2O3(0001) surface and Ti deposited on ƒ¿- Al2O3(0001) substrate: CAICISS and RHEED study, SURFACE SCIENCE 1999, Vol 437, Iss 3, pp 289- 298

153j    Tabata K; Choso T; Nagasawa YFTopmost surface analysis of an MgO-dissolved LiNbO3 single crystal with coaxial impact collision ion scattering spectroscopy, SURFACE SCIENCE 1999, Vol 435, pp 534- 537

154j    Suzuki T; Souda RFInterfacial reaction during thin film growth of Ti on the MgO(001) surface, JOURNAL OF PHYSICAL CHEMISTRY B 1999, Vol 103, Iss 28, pp 5747- 5749

155j    Umezawa K; Nakanishi S; Gibson WMFSurface structure and metal epitaxy: impact collision ion scattering spectroscopy studies on Au-Ni(111), SURFACE SCIENCE 1999, Vol 426, Iss 2, pp 225- 234

156j    Ohnishi T; Takahashi K; Nakamura M; Kawasaki M; Yoshimoto M; Koinuma HFA-site layer terminated perovskite substrate: NdGaO3, APPLIED PHYSICS LETTERS 1999, Vol 74, Iss 17, pp 2531- 2533

157j    Lee GH; Yoshimoto M; Ohnishi T; Sasaki K; Koinuma HFEpitaxial BaTiO3 thin films grown in unit cell layer-by-layer mode by laser molecular beam epitaxy, MATERIALS SCIENCE AND ENGINEERING B- SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 1998, Vol 56, Iss 2-3, pp 213- 217

158j    Izumi M; Konishi Y; Nishihara T; Hayashi S; Shinohara M; Kawasaki M; Tokura YFAtomically defined epitaxy and physical properties of strained La0.6Sr0.4MnO3 films, APPLIED PHYSICS LETTERS 1998, Vol 73, Iss 17, pp 2497- 2499

159j    Yoshimoto M; Maruta H; Ohnishi T; Sasaki K; Koinuma HFIn situ determination of the terminating layer of La0.7Sr0.3MnO3 thin films using coaxial impact-collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 1998, Vol 73, Iss 2, pp 187- 189

160j    Ito T; Umezawa K; Nakanishi SFEpitaxial growth of Ag on Ni(111), APPLIED SURFACE SCIENCE 1998, Vol 132, pp 497- 500

161j    Ishii T; Mukaida M; Nishihara T; Hayashi S; Shinohara MFIdentification of surface atoms of LiGaO2(001) substrate for hexagonal GaN film by coaxial impact collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1998, Vol 37, Iss 6A, pp L672- L674

162j    Tabata K; Choso T; Murakami A; Suzuki EFTopmost surface analysis of a z-cut LiNbO3 by coaxial impact-collision ion scattering spectroscopy, SURFACE SCIENCE 1998, Vol 404, Iss 1- 3, pp 487- 490

163j    Tabata K; Choso T; Nagasawa YFThe topmost structure of annealed single crystal of LiNbO3, SURFACE SCIENCE 1998, Vol 408, Iss 1- 3, pp 137- 145

164j    Suzuki T; Hishita S; Oyoshi K; Souda RFSurface segregation of implanted ions: Bi, Eu, and Ti at the MgO(100) surface, APPLIED SURFACE SCIENCE 1998, Vol 132, pp 534- 538

165j    Umezawa K; Nakanishi S; Gibson WMFGrowth modes depending on the growing temperature in heteroepitaxy: Au/Ni(111), PHYSICAL REVIEW B 1998, Vol 57, Iss 15, pp 8842- 8844

166j    Suzuki T; Hishita S; Oyoshi K; Souda RFSegregation of Eu implanted at the MgO(100) surface, SURFACE SCIENCE 1997, Vol 391, Iss 1-3, pp L1243- L1248

167j    Choso T; Kamada M; Tabata KFThe effects of heat treatments upon NO adsorption for a single crystal of LiNbO3, APPLIED SURFACE SCIENCE 1997, Vol 121, pp 387- 390

168j    Umezawa K; Nakanishi S; Yumura T; Gibson WM; Watanabe M; KidoY; Yamamoto S; Aoki Y; Naramoto H,  Surface structure analysis of Ni(111)-(ã3xã3)R30‹-Pb by impact-collision ion scattering spectroscopy, PHYSICAL REVIEW B 1997, Vol 56, Iss 16, pp 10585- 10589

169j    Noakes TCQ; Hutt DA; McConville CF; Woodruff DPFStructural investigation of ordered Sb adsorption phases on Ag(111) using coaxial impact collision ion scattering spectroscopy, SURFACE SCIENCE 1997, Vol 372, Iss 1-3, pp 117- 131

170j    Fuse T; Ishiyama O; Shinohara M; Kido YFMonte Carlo simulation of angular scan spectra for coaxial impact collision ion scattering spectroscopy (CAICISS), SURFACE SCIENCE 1997, Vol 372, Iss 1-3, pp 350- 354

171j    Fuse T; Watanabe M; Kido Y; Ishiyama O; Shinohara M; Ohtani FFMonte Carlo simulation of time-of-flight spectra of coaxial impact collision ion scattering spectroscopy applied to MoS2(0001) and SrTiO3(001), SURFACE SCIENCE 1996, Vol 358, Iss 1- 3, pp 119- 124

172j    Sung MM; Rabalais JWFComparison of coaxial and normal incidence ion scattering, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1996, Vol 108, Iss 4, pp 389- 398

173j    Duszak R; Ohtani F; Kadowaki Y; Nozoye HFQuantitative determination of the imperfectness of a cleaved MoS2(001) surface by coaxial impact-collision ion scattering, SURFACE SCIENCE 1995, Vol 324, Iss 2-3, pp 257- 262

174j    Kawasaki M; Takahashi K; Maeda T; Tsuchiya R; Shinohara M; Ishiyama O; Yonezawa T; Yoshimoto M; Koinuma HFAtomic control of the SrTiO3 crystal surface, SCIENCE 1994, Vol 266, Iss 5190, pp 1540- 1542

175j    Yoshimoto M; Maeda T; Shimozono K; Koinuma H; Shinohara M; Ishiyama O; Ohtani FFTopmost surface analysis of SrTiO3(001) by coaxial impact-collision ion scattering spectroscopy, APPLIED PHYSICS LETTERS 1994, Vol 65, Iss 25, pp 3197- 3199

176j    Kawai M; Liu ZY; Hanada T; Katayama M; Aono M; McConville CFFLayer controlled growth of oxide superconductors, APPLIED SURFACE SCIENCE 1994, Vol 82-3, pp 487- 493

177j    Tanaka Y; Morishita H; Watamori M; Oura K; Katayama IFStructural study of SrTiO3(100) surfaces by low-energy ion scattering, APPLIED SURFACE SCIENCE 1994, Vol 82-3, pp 528- 531

178j    Wang Y; Teplov SV; Rabalais JWFDetermination of the structure of subsurface layers by means of coaxial time-of-flight scattering and recoiling spectrometry (TOF-SARS), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1994, Vol 90, Iss 1- 4, pp 237- 242

179j    Kadowaki Y; Aika K; Kondoh H; Nozoye HFSurface structure of MoS2(001) determined by coaxial impact- collision ion scattering spectroscopy (CAICISS), SURFACE SCIENCE 1993, Vol 287, pp 396- 399

180j    Nakanishi S; Kawamoto K; Fukuoka N; Umezawa KFLow-energy ion scattering analysis of the surface compositional change of Au3Cu(001) induced by oxygen chemisorption, SURFACE SCIENCE 1992, Vol 261, Iss 13, pp 342- 348

181j    Wang Y; Shi M; Rabalais JWFCoaxial scattering as a probe of surface structure - (1x2)-Pt(110) and (1x3)-Pt(110), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1992, Vol 62, Iss 4, pp 505- 512

182j    Nakanishi S; Fukuoka N; Kawamoto K; Umezawa K; Teraoka Y; Nakahigashi KFOxygen induced surface segregation of Cu on the Au0.7Cu0.3(100) surface, SURFACE SCIENCE 1991, Vol 247, Iss 1, pp L215- L220

 

‡C Exploring Surface Processes by Real-time CAICISS,  and Medium-Energy CAICISS

183j    Fujino T; Katayama M; Yamazaki Y; Inoue S; Okuno T; Oura KFInfluence of hydrogen-surfactant coverage on Ge/Si(001) heteroepitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2002, Vol 41,  Iss 7A, pp L790 –L793

184j    Fujino T; Okuno T; Katayama M; Oura KFHydrogen segregation and its detrimental effect in epitaxial growth of Ge on hydrogen-terminated Si(001), JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 2001,  Vol 40, Iss 11A, pp L1173 -L1175

185j    Fujino T; Fuse T; Ryu JT; Inudzuka K; Nakano T; Goto K; Yamazaki Y; Katayama M; Oura KFGe thin film growth on Si(111) surface using hydrogen surfactant, THIN SOLID FILMS 2000, Vol 369, Iss 1-2, pp 25- 28

186j    Kobayashi T; McConville CF; Nakamura J; Dorenbos G; Sone H; Katayama T; Aono MFStudy of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy, DEFECTS AND DIFFUSION IN SEMICONDUCTORS 2000, Vol 183- 1, pp 207- 213

187j    Fujino T; Fuse T; Tazou E; Nakano T; Inudzuka K; Goto K; Yamazaki Y; Katayama M; Oura KFIn situ monitoring of hydrogen-surfactant effect during Ge growth on Si(001) using coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 2000, Vol 161, pp 419- 423

188j    Kobayashi T; McConville CF; Dorenbos G; Iwaki M; Aono MFDepth profile and lattice location analysis of Sb atoms in Si/Sb(ƒÂ-doped)/Si(001) structures using medium-energy ion scattering spectroscopy, APPLIED PHYSICS LETTERS 1999, Vol 74, Iss 5, pp 673- 675

189j    Fuse T; Kawamoto K; Katayama M; Oura KFIn situ observation of Ge ƒÂ-layer in Si(001) using quasi medium energy ion scattering spectroscopy, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 1999, Vol 2, Iss 2, pp 159- 164

190j    Fuse T; Kawamoto K; Shiizaki T; Tazou E; Katayama M; Oura KFQuasi-medium energy ion scattering spectroscopy observation of a Ge ƒÂ-doped layer fabricated by hydrogen mediated epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1998,  Vol 37, Iss 5A, pp 2625- 2628

191j    Fuse T; Kawamoto K; Shiizaki T; Tazou E; Katayama M; Oura KFObservation of behavior of Ge ƒÂ-doped layer in Si(001), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1998, Vol 138, pp 1080- 1085

192j    Fuse T; Kawamoto K; Kujime S; Shiizaki T; Katayama M; Oura KFQuasi-medium energy ion scattering spectroscopy observation of surface segregation of Ge ƒÂ-doped layer during Si molecular beam epitaxy, SURFACE SCIENCE 1997, Vol 393, Iss 1- 3, pp L93- L98

193j    Fuse T; Kawamoto K; Kujime S; Shiizaki T; Katayama M; Oura KFQuasi-medium energy ion scattering spectroscopy study of Ge ƒÂ-layer on Si(001), APPLIED SURFACE SCIENCE 1997, Vol 121, pp 218- 222

194j    Tanaka Y; Morishita H; Ryu JT; Katayama I; Oura KFThin-film growth-mode analysis by low energy ion scattering, SURFACE SCIENCE 1996, Vol 363, Iss 1- 3, pp 161- 165

195j    Kawamoto K; Mori T; Kujime S; Oura KFObservation of the diffusion of Ag atoms through an a-Si layer on Si(111) by low-energy ion scattering, SURFACE SCIENCE 1996, Vol 363, Iss 1- 3, pp 156- 160

196j    Katayama M; Nakayama T; Aono M; McConville CFFInfluence of surfactant coverage on epitaxial growth of Ge on Si(001), PHYSICAL REVIEW B 1996, Vol 54, Iss 12, pp 8600- 8604

197j    McConville CF; Noakes TCQ; Sugden S; Hucknell PK; Sofield CJFTime-of-flight medium energy ion scattering study of epitaxial Si/Si1- xGex superlattice structures, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1996, Vol 118,  Iss 1-4, pp 573- 577

198j    Kobayashi T; Dorenbos G; Shimoda S; Iwaki M; Aono MFSeparation of scattered ions and neutrals in medium-energy ion scattering spectroscopy, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1996, Vol 118, Iss 1-4, pp 584- 587

199j    Matsui M; Uchida F; Nakagawa K; Nishida AFIn situ measurement of He+ stopping in Si layers by low-energy ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1996, Vol 35, Iss 3, pp 1937- 1939

200j    Saitoh T; Tamura M; Palmer JE; Yodo TFAtom rearrangement in Ge layer grown on Si substrate during anneal observed in real-time by coaxial impact collision ion scattering spectroscopy, JOURNAL OF CRYSTAL GROWTH 1995, Vol 150, Iss 1-4, pp 955-959

201j    Sugden S; Sofield CJ; Noakes TCQ; Kubiak RAA; McConville CFFProbing the Interfacial and Subsurface Structure of Si/Si1- xGex Multilayers, APPLIED PHYSICS LETTERS 1995, Vol 66, Iss 21, pp 2849- 2851

202j    Kawamoto K; Inari K; Mori T; Oura KFA new apparatus for impact collision ion scattering spectroscopy,  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1995, Vol 34, Iss 9A, pp 4917- 4919

203j    Kawamoto K; Oura KFScattering process of low-energy ions from binary compound surfaces at 180‹, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1- REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1995, Vol 34, Iss 9A, pp 4929- 4931

204j    Saitoh T; Tamura M; Palmer JEFAl/Ga Atom-exchange during AlAs/GaAs heterointerface formation in alternating source supply, COMPOUND SEMICONDUCTORS 1994 1995, Iss 141, pp 345- 350

205j    Tamura M; Saitoh T; Sugiyama N; Hashimoto A; Ohkouchi S; Ikoma N; Morishita YFApplication of real-time low-energy ion scattering spectroscopy to heterointerface formation processes of molecular beam epitaxially grown ‡V-V compound semiconductors, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1994, Vol 85, Iss 1- 4, pp 404- 413

206j    Saitoh T; Hashimoto A; Ohkouchi S; Tamura MFVariation of surface composition during heteroepitaxy observed by coaxial impact collision ion scattering spectroscopy, JOURNAL OF CRYSTAL GROWTH 1993, Vol 127, Iss 1- 4, pp 1018- 1021

207j    Saitoh T; Palmer JE; Tamura MFGaAs/AlAs and AlAs/GaAs Interface formation process studied by coaxial impact-collision ion scattering spectroscopy -comparison between alternating and simultaneous source supply, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1993, Vol 32, Iss 4A, pp L476- L479

208j    Saitoh T; Hashimoto A; Tamura MFReal-time Observation of the composition variation due to In-Ga replacements at the GaAs/InAs interface by coaxial impact collision ion scattering spectroscopy, APPLIED SURFACE SCIENCE 1992, Vol 60-1, pp 228- 233

209j    Tanaka Y; Kinoshita T; Sumitomo K; Shoji F; Oura K; Katayama IFAg thin-film growth on hydrogen-terminated Si(100) surface studied by TOF-ICISS, APPLIED SURFACE SCIENCE 1992, Vol 60-1, pp 195- 199

210j    Saitoh T; Hashimoto A; Tamura MFIn situ observation of the initial growth stages in GaAs/InAs by coaxial impact collision ion scattering spectroscopy - transition from 2-dimensional-like to 3-dimensional island growth, JOURNAL OF APPLIED PHYSICS 1992, Vol 71, Iss 8, pp 3802-3805

211j    Sugiyama N; Hashimoto A; Tamura MFReal-time 0bservation of AlAs/GaAs superlattice growth by coaxial impact collision ion scattering spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2- LETTERS 1991, Vol 30, Iss 9A, pp L1576- L1578

212j    Kubo M; Narusawa TFA Novel in situ molecular beam epitaxy monitoring system using low-energy ion scattering, JOURNAL OF CRYSTAL GROWTH 1991, Vol 111, Iss 1- 4, pp 136-140

213j    Sumitomo K; Kobayashi T; Shoji F; Oura K; Katayama IFHydrogen-mediated epitaxy of Ag on Si(111) as studied by low-energy ion scattering, PHYSICAL REVIEW LETTERS 1991, Vol 66, Iss 9, pp 1193- 1196

214j    Katayama M; Nomura E; Soejima H; Hayashi S; Aono MFReal-time monitoring of molecular beam epitaxy processes with coaxial impact-collision ion scattering spectroscopy (CAICISS), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 1990, Vol 45, Iss 1- 4, pp 408- 411