イオンビーム分析(CAICISS/TOF-ERDA)グループ 研究業績
1980年以降)

Last update: February 20, 2017

 

 

1)             S. Osaka, O Kubo, K. Takahashi, M. Oda, K. Kaneko, H. Tabata, S. Fujita and M. Katayama:
Unpredicted Surface Termination of α-Fe2O3(0001) Film Grown by Mist Chemical Vapor Deposition”,
Surf. Sci. 660, 9-15 (2017).

2)             D. Tamba, O. Kubo, M. Oda, S. Osaka, K. Takahashi, H. Tabata, K. Kaneko, S. Fujita and M. Katayama:
Surface Termination Structure ofα-Ga2O3 Film Grown by Mist Chemical Vapor Deposition
Appl. Phys. Lett. 108, Issue 25, 251602 1-5 (2016).

3)             S. Okasaka, O. Kubo, D. Tamba, T. Ohashi, H. Tabata and M. Katayama:
Surface Structure Analysis of BaSi2(100) Epitaxial Film Grown on Si(111) Using CAICISS
Surf. Sci. 635, 115-122 (2015).

4)             H. Suto, K. Imai, S. Fujii, S. Honda and M. Katayama:
Growth Process and Surface Structure of MnSi on Si(111)
Surf. Sci. 603, 226-231 (2009)
.

5)             H. Suto, S. Fujii, F. Kawamura, M. Yoshimura, Y. Kitaoka, Y. Mori, S. Honda and M. Katayama:
Surface Characterization of GaN(0001) Grown by Liquid Phase Epitaxy Using Coaxial Impact-Collision Ion Scattering Spectroscopy
Jpn. J. Appl. Phys. 47, No. 9, 7281-7284 (2008).

6)             H. Suto, S. Fujii, N. Miyamae, R. D. Armitage, J. Suda, T. Kimoto, S. Honda and M. Katayama:
Structure Analysis of ZrB2(0001) Surface Prepared by ex situ HF Treatment
Jpn. J. Appl. Phys.
45, Part 2, Letters, No.19, L497-L500 (2006).

7)             S. Fujii, Y. Michishita, N. Miyamae, H. Suto, S. Honda, H. Okado, K. Oura and M. Katayama:
Growth Process and Structure of Er/Si(001) Thin Film
Thin Solid Films 508, 82-85 (2006).

8)             S. Fujii, Y. Michishita, N. Miyamae, H. Suto, S. Honda, K. Oura and M. Katayama:
Determination of Lattice Polarity and Surface Relaxation of ZnO(0001)-Zn Surface by Coaxial Impact-Collision Ion Scattering Spectroscopy
Jpn. J. Appl. Phys. 44, Part 2, Letters, No.41, L1285-L1288 (2005).

9)             S. Fujii, Y. Michishita, N. Miyamae and K. Oura and M. Katayama:
Development of Low-Energy Neutral Atom Scattering Spectroscopy Based on CAICISS Operable in Gas Phase Atmosphere
Nucl. Instrum. & Methods Phys. Res. B 232, 290-294 (2005).

10)          S. Fujii, M. Katayama, Y. Michishita and K. Oura:
In Situ Monitoring of Surface Processes in Plasma by Coaxial Impact-Collision Ion Scattering Spectroscopy
Jpn. J. Appl. Phys. 44, Part 1, No. 4A , 1911-1914 (2005).

11)          R. Tsushima, Y. Michishita, S. Fujii, H. Okado, K. Umezawa, Y. Maeda, Y. Terai, K. Oura and M. Katayama:
Growth Process and Structure of Fe/Si(111) Ultrathin Film: Transition from Single-Domain Fe(111)/Si(111) to β-FeSi2

Surf. Sci. 579, 73-79 (2005).

12)          R. Tsushima, M. Katayama, T. Fujino, M. Shindo, T. Okuno and K. Oura:
Temperature Dependence of Flat Ge/Si(001) Heterostructures as Observed by CAICISS
Appl. Surf. Sci.216, 19-23 (2003).

13)          T. Fujino, M. Katayama, S. Inoue, A. Tatsumi, T. Horikawa and K. Oura:
Quantitative Analysis of Hydrogen-Induced Si Segregation on Ge-Covered Si(001) Surface
Jpn. J. Appl. Phys. 42, Part 2, No.5A , L485-L488 (2003).

14)          K. Oura and M. Katayama:
Ion Beam as a Probe to Study the Behavior of Hydrogen on Silicon Surfaces
Current Applied Physics 3, 39-44 (2003).

15)          M. Katayama:
Exploring Surface Processes by Coaxial Impact-Collision Ion Scattering Spectroscopy and Time-of-Flight Elastic Recoil Detection Analysis
Current Applied Physics 3, 65-69 (2003).

16)          T. Fujino, M. Katayama, T. Okuno, M. Shindo, R. Tsushima and K. Oura:
Thermal Stability in the Morphology of Ge films on Si(001) grown by Hydrogen-Surfactant-Mediated Epitaxy
Jpn. J. Appl. Phys. 42, Part 2, No. 1AB, L63-L66 (2003).

17)          片山光浩,藤野俊明,尾浦憲治郎:
気相雰囲気下の表面プロセスのイオンームその場計測 Ge/Si(001)水素サーファクタント媒介エピタキシー−
表面科学 23, No. 12, 759-766 (2002).

18)          J.-T. Ryu, M. Katayama and K. Oura:
Sn Thin Film Growth on Si(111) Surface Studied by CAICISS
Surf. Sci. 515, 199-204 (2002).

19)          T. Fujino, M. Katayama, Y. Yamazaki, S. Inoue, T. Okuno and K. Oura:
Influence of Hydrogen-Surfactant Coverage on Ge/Si(100) Hetroepitaxy
Jpn. J. Appl. Phys. 41, Part 2, No. 7A, L790-L793 (2002).

20)          J.-T. Ryu, T. Fujino, M. Katayama, Y.-B. Kim and K. Oura:
Influence of Interface Structures on Sn Thin Film Growth on Si(111) Surface
Appl. Surf. Sci. 190, 139-143 (2002).

21)          T. Okuno, T. Fujino, M. Shindo, M. Katayama, K. Oura, S. Sonoda and S. Shimizu:
Influence of Mn Incorporation on Molecular Beam Epitaxial Growth of GaMnN Film
Jpn. J. Appl. Phys. 41, Part 2, No. 4A, L415 - L417 (2002).

22)          T. Fujino, T. Okuno, M. Katayama and K. Oura:
Hydrogen Segregation and its Detrimental Effect in Epitaxial Growth of Ge on Hydrogen-terminated Si(001)
Jpn. J. Appl. Phys. 40, Part 2, No.11A, L1173-L1175 (2001).

23)          T. Fujino, M. Katayama, K. Inudzuka, T. Okuno, K. Oura and T. Hirao:
Surface Hydroxyl Formation on Vacuum-annealed TiO2(110)
Appl. Phys. Lett. 79, No. 17, 2716-2718 (2001).

24)          M. Katayama, T. Fujino, Y. Yamazaki, S. Inoue, J.-T. Ryu and K. Oura:
Coaxial Impact-Collision Ion Scattering Spectroscopy and Time-of-flight Elastic Recoil Detection Analysis for In Situ Monitoring of Surface Processes in Gas Phase Atmosphere
Jpn. J. Appl. Phys. 40, Part 2, No. 6A, L576 - L579 (2001).

25)          T. Fujino, T. Fuse, J.-T. Ryu, K. Inudzuka, Y. Yamazaki, M. Katayama and K. Oura:
Observation of Hydrogen Adsorption on 6H-SiC(0001) Surface
Appl. Surf. Sci. 169-170, 113-116 (2001).

26)          T. Fujino, M. Katayama, Y. Yamazaki, S. Inoue, J.-T. Ryu and K. Oura:
Ion Scattering and Recoiling Spectroscopy for Real Time Monitoring of Surface Processes in a Gas Phase Atmosphere
Surf. Rev. Lett. 7, 657-659 (2000).

27)          T. Fujino, T. Fuse, J.-T. Ryu, K. Inudzuka, Y. Yamazaki, M. Katayama and K. Oura:
Structural Analysis of 6H-SiC(0001)Ö3xÖ3 Reconstructed Surface
Jpn. J. Appl. Phys. 39, Part 1, No. 11, 6410-6412 (2000).

28)          T. Fujino, T. Fuse, J.-T. Ryu, K. Inudzuka, T. Nakano, K. Goto, Y. Yamazaki, M. Katayama and K. Oura:
Ge Thin Film Growth on Si(111) using Hydrogen Surfactant
Thin Solid Films 369, 25-28 (2000). 

29)          T. Fujino, T. Fuse, J.-T. Ryu, K. Inudzuka, Y. Yamazaki, M. Katayama and K. Oura:
Adsorption of Atomic Hydrogen on Ag-covered 6H-SiC(0001) Surface
Jpn. J. Appl. Phys. 39, Part 1, No. 7B, 4340-4342 (2000).

30)          片山光浩:
気相雰囲気における表面プロセスのイオンビームその場計測法の開拓
生産技術誌 52, No. 3, 59-62 (2000).

31)          T. Fujino, T. Fuse, E. Tazou, T. Nakano, K. Inudzuka, K. Goto, Y. Yamazaki, M. Katayama and K. Oura:
In-situ Monitoring of Hydrogen-surfactant Effect during Ge Growth on Si(001) using Coaxial Impact-Collision Ion Scattering Spectroscopy and Time-of-flight Elastic Detection Analysis
Nucl. Instrum. & Methods Phys. Res. B 161-163, 419-423 (2000).

32)          J.-T. Ryu, O. Kubo, T. Fujino, T. Fuse, T. Harada, K. Kawamoto, M. Katayama, A. A. Saranin, A.V. Zotov and K. Oura:
Atomic-hydrogen-induced Self-organization of Si(111)Ö3xÖ3-In Surface Phase Studied by CAICISS and STM
Surf. Sci. 447, 117-125 (2000).

33)          片山光浩,藤野俊明,尾浦憲治郎:
シリコン表面における水素介在プロセスのイオンビームその場計測
応用物理学会薄膜・表面物理分科会 News Letter, No. 108, 2-8 (2000).

34)          K. Oura, V. G. Lifshits, A. A. Saranin, A. V. Zotov and M. Katayama:
Hydrogen Interaction with Clean and Modified Silicon Surfaces
Surf. Sci. Rep. 35, 1-69 (1999).

35)          T. Fuse, K. Kawamoto, M. Katayama and K. Oura:
In Situ Observation of Ge d-layer in Si(001) using Quasi Medium Energy Ion Scattering Spectroscopy
Materials Science in Semiconductor Processing 2, 159-164 (1999).

36)          J.-T. Ryu, T. Fuse, O. Kubo, H. Tani, T. Fujino, T. Harada, A. A. Saranin, A. V. Zotov, M. Katayama and K. Oura:
Adsorption of Atomic Hydrogen on the Si(001)4x3-In Surface Studied by Coaxial Impact Collision Ion Scattering Spectroscopy and Scanning Tunneling Microscopy
J. Vac. Sci. Technol. B 17, 983-988 (1999).

37)          T. Fuse, T. Fujino, J.-T. Ryu, M. Katayama and K. Oura:
Total Cross Section of Electron Stimulated Desorption of Hydrogen from Hydrogen-Terminated Ge/Si(001) as Observed by Time-of-flight Elastic Recoil Detection Analysis
Jpn. J. Appl. Phys. 38, Part 1, No. 5A, 2878-2880 (1999).

38)          T. Fuse, J.-T. Ryu, T. Fujino, K. Inudzuka, M. Katayama and K. Oura:
Adsorption of H on the Ge/Si(001) Surface as Studied by Time-of-flight Elastic Recoil Detection Analysis and Coaxial Impact Collision Ion Scattering Spectroscopy
Jpn. J. Appl. Phys. 38, Part 1, No. 3A, 1359-1362 (1999).

39)          M. Watamori, M. Isono, H. Madono, Y. Kawano, K. Sasabe, T. Hirao and K. Oura:
Ion Beam Analysis of PZT Thin Films
Appl. Surf. Sci. 142, 422-427 (1999).

40)          野田研二,柳正鐸,片山光浩,尾浦憲治郎
飛行時間型直衝突イオン散乱分光法によるSi(111)表面上のSn薄膜成長の観察
真空 42208-211 (1999).

41)          T. Fuse, T. Fujino, J.-T. Ryu, M. Katayama and K. Oura:
Electron Stimulated Desorption of Hydrogen from H/Si(001)-1x1 Surface Studied by Time-of-flight Elastic Recoil Detection Analysis
Surf. Sci. 420, 81-86 (1999).

42)          片山光浩,柳正鐸,久保理,A. A. SaraninA. V. Zotov,尾浦憲治郎
金属/シリコン初期界面の水素誘起自己組織化
表面科学19, No. 9, 579-587 (1998).

43)          T. Fuse, K. Kawamoto, T. Shiizaki, E. Tazou, M. Katayama and K. Oura:
Quasi-Medium Energy Ion Scattering Spectroscopy Observation of a Ge d-doped Layer Fabricated by Hydrogen Mediated Epitaxy
Jpn. J. Appl. Phys. 37, Part 1, 2625-2628 (1998).

44)          J.-T. Ryu, K. Kui, K. Noda, M. Katayama and K. Oura:
The Effect of Hydrogen Termination on In Growth on Si(100) Surface
Surf. Sci. 401, L425-L431 (1998).

45)          T. Fuse, K. Kawamoto, T. Shiizaki, E. Tazou, M. Katayama and K. Oura:
Observation of Behavior of Ge d-doped layer in Si(001)
Nucl. Instrum. & Methods Phys. Res. B 136-138, 1080-1085 (1998).

46)          J.-T. Ryu, K. Kui, K. Noda, M. Katayama and K. Oura:
CAICISS Studies of Atomic-hydrogen-induced Structural Changes of the Sb Terminated Si Surfaces
Nucl. Instrum. & Methods Phys. Res. B 136-138, 1102-1107 (1998).

47)          F. Shoji, A. Yamada, T. Shiramizu and K. Oura:
Surface-recoil Processes of Hydrogen on Si (100)-2×1:H and Si (100)-1×1:2H Surfaces Studied by Low-energy He Ion Beams
Nucl. Instrum. & Methods Phys. Res. B 135, 366-371 (1998).

48)          T. Fuse, K. Kawamoto, S. Kujime, T. Shiizaki, M. Katayama and K. Oura:
Quasi-Medium Energy Ion Scattering Spectroscopy Observation of Surface Segregation of Ge d-doped Layer during Si Molecular Beam Epitaxy
Surf. Sci. 393, L93-L98 (1997).

49)          T. Fuse, K. Kawamoto, T. Shiizaki, M. Katayama and K. Oura:
Quasi-Medium Energy Ion Scattering Spectroscopy Study of Ge δ-layer on Si(001)
Appl. Surf. Sci. 121/122, 218-222 (1997).

50)          J.-T. Ryu, K. Kui, K. Noda, M. Katayama and K. Oura:
Atomic-hydrogen-induced Structural Change of the Si(100)-(2x1)-Sb Surface Studied by TOF-ICISS
Appl. Surf. Sci. 121/122, 223-227 (1997).

51)          F. Shoji and K. Oura:
Hydrogen Analysis of Si Surfaces by Low-energy Ions
J. Nucl. Mater. 248, 443-447 (1997).

52)          椎崎貴史,布瀬暁志,久次米繁範,川本清,片山光浩,尾浦憲治郎:
Si(001) における Ge デルタドープ層の挙動−TOF-LEIS による観察−
表面科学 18, No. 7, 394-398 (1997).

53)          J.-T. Ryu, K. Kui, K. Noda, M. Katayama and K. Oura:
Adsorption of Atomic Hydrogen on the Si(100)-(2x1)-Sb Surface
Jpn. J. Appl. Phys. 36, Part 1, 4435-4439 (1997).

54)          M. Watamori, S. Honda, O. Kubo, I. Kanno, T. Hirao, K. Sasabe and K. Oura:
High-energy Ion Beam Analysis of Ferroelectric Thin Films
Appl. Surf. Sci. 117/118, 453-458 (1997).

55)          M. Watamori, Y. Maeda, O. Kubo and K. Oura:
A New Method for the Detection of Native Oxide on Si with Combined Use of 16O(α, α)16O Resonance and Channeling
Appl. Surf. Sci. 113/114, 403-407 (1997).

56)          S. Honda, K. Chihara, M. Watamori and K. Oura:
Depth Profilimg of Oxygen Concertration of Indium Tin Oxide Fabricated by Bias Sputtering
Appl. Surf. Sci. 113/114, 408-411 (1997)

57)          J.-T. Ryu, K. Kui, Y. Tanaka, M. Katayama, K. Oura and I. Katayama:
TOF-ICISS Observation of Pb Growth on the Si(111)-Ö3xÖ3-Ag Surface
Appl. Surf. Sci. 113/114, 393-397 (1997).

58)          J.-T. Ryu, K. Kui, M. Katayama and K. Oura:
The Effects of Atomic-Hydrogen on the Morphology of the Initial Stage of Sb Growth on Si(100) Studied by TOF-ICISS
Proceedings of the Second Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach, Kobe, 91-95 (1997).

59)          M. Watamori, K. Oura, T. Hirao and K. Sasabe:
Backscattering Analysis of Thin SiO2 Films on Si using 16O(α, α)16O 3.045 MeV Resonance
Nucl. Instrum & Meth. Phys. Res.B 118, 228-232 (1996).

60)          M. Watamori, K. Oura, T. Hirao and K. Sasabe:
Channeling Analysis of Oxygen in Oxide Materials using 16O(α, α)16O Resonant Backscattering
Nucl. Instrum & Methods Phys. Res. B 118, 233-237 (1996).

61)          Y. Tanaka, H. Morishita, J.-T. Ryu, I. Katayama and K. Oura:
The Initial Stage of Pb Thin Film Growth on Si(111) Surface Studied by TOF-ICISS
Nucl. Instrum.& Methods Phys. Res. B 118, 530-532 (1996).

62)          S. Honda, M. Watamori and K. Oura:
The Effects of Oxygen Content on Electrical and Optical Properties of Indium Tin Oxide Films Fabricated by Reactive Sputtering
Thin Solid Films 281-282, 206-208 (1996).

63)          K. Kawamoto, T. Mori, S. Kujime and K. Oura:
Observation of the Diffusion of Ag Atoms though an a-Si Layer on Si(111) by Low-energy Ion Scattering
Surf. Sci. 363, 156-160 (1996).

64)          Y. Tanaka, H. Morishita, J.-T. Ryu, I. Katayama and K. Oura:
Thin-film Growth-mode Analysis by Low Energy Ion Scattering
Surf. Sci. 363, 161-165 (1996).

65)          F. Shoji, A. Yamada and K. Oura:
Inelastic Energy Loss of Recoiled Hydrogen Ions in Low-energy He+, Ne+ and Ar+ Collisions with Hydrogenated Silicon Surface
Nucl. Instrum. & Methods Phys. Res. B 115, 196-199 (1996).

66)          S. Honda, A. Tsujimoto, M. Watamori and K. Oura:
Effects of Post-Annealing on Oxygen Content of Indium Tin Oxide Films Fabricated by Reactive Sputtering
Jpn. J. Appl. Phys. 34, Part 2, No. 10B, L1386-L1389 (1995).

67)          K. Kawamoto and K. Oura:
Scattering Process of Low-Energy Ions from Binary Compound Surfaces at 180°
Jpn. J. Appl. Phys. 34, Part 1, No. 9A, 4929-4931 (1995).

68)          K. Kawamoto, K. Inari, T. Mori and K. Oura:
A New Apparatus for Impact Collision Ion Scattering Spectroscopy
Jpn. J. Appl. Phys. 34, Part 1, No. 9A, 4917-4919 (1995).

69)          M. Watamori, K. Oura and T. Nakamura:
Quantitative Depth Profiling of Oxygen in Homoepitaxial SrTiO3 Films
J. Vac. Sci. Technol. A 13, 1293-1298 (1995).

70)          S. Honda, A. Tsujimoto, M. Watamori and K. Oura:
Oxygen Content of Indium Tin Oxide Films Fabricated by Reactive Sputtering
J. Vac. Sci. Technol. A 13, 1100-1103 (1995).

71)          綿森道夫,尾浦憲治郎
高精度RBS共鳴散乱法による薄膜の酸素分析
表面科学 16, No. 6, 391-396 (1995).

72)          尾浦憲治郎
弾性反跳検出分析(ERDA)
RADIOISOTOPES 44, No. 5, 364-368 (1995).

73)          綿森道夫,尾浦憲治郎
ヘリウムイオン共鳴散乱による酸素含有量の絶対量測定
応用物理 64, No. 4, 374-375 (1995).

74)          尾浦憲治郎
半導体表面における水素媒介エピタキシー
まてりあ 34, No. 2, 115-120, (1995).

75)          M. Watamori, M. Naitoh, H. Morioka, Y. Maeda and K. Oura:
Low Temperature Adsorption of Hydrogen on Si(111) and (100) Surfaces Studied by Elastic Recoil Detection Analysis
Appl. Surf. Sci. 82/83, 417-421 (1994).

76)          Y. Tanaka, H. Morishita, M. Watamori, K. Oura and I. Katayama:
Structural Study of SrTiO3(100) Surfaces by Low Energy Ion Scattering
Appl. Surf. Sci. 82/83, 528-531 (1994).

77)          M. Watamori, F. Shoji and K. Oura:
Methodrogy for Accurate Oxygen Distribution Analysis and its Application to YBa2Cu3OX Thin Films using 16O(a,a)16O 3.045 MeV Resonance Reaction
Jpn. J. Appl. Phys. 33, Part 1, No. 10, 6039-6045 (1994).

78)          S. Honda, A. Tsujimoto, M. Watamori and K. Oura:
Depth Profilimg of Oxygen Concertration of Indium Tim Oxide Films Fabricated by Reactive Sputtering
Jpn. J.Appl. Phys. 33, Part 2, No. 9A, L1257-L1260 (1994).

79)          K. Oura, M. Naitoh, H. Morioka, M. Watamori and F. Shoji:
Elastic Recoil Detection Analysis of Coadsorption of Hydrogen and Deuterium on Clean Si Surfaces
Nucl. Instrum.& Methods Phys. Res. B 85, 344-346 (1994).

80)          K. Oura, Y. Tanaka, H. Morishita and F. Shoji:
Low Energy Ion Scattering Study of Hydrogen-induced Recordering of Pb Monolayer Films on Si (111) Surfaces
Nucl. Instrum.& Methods Phys. Res. B 85, 439-442 (1994).

81)          尾浦憲治郎
高エネルギーイオンビーム法
応用物理 63, No.2, 173-174 (1994).

82)          尾浦憲治郎,住友弘二,内藤正路
シリコン表面の水素変性と薄膜形成初期過程
固体物理 28, No. 12, 943-949 (1993).

83)          K. Oura, M. Naitoh and F. Shoji:
”Ion Beam Analysis of Hydrogen on Silicon Surfaces”
Microbeam Analysis 2, 139-150 (1993).

84)          M. Naitoh, H. Morioka, F. Shoji and K. Oura:
Coadsorption of Hydrogen and Deuterium on Si(100) Surface Studied by Elastic Recoil Detection Analysis
Surf. Sci. 297, 135-140 (1993).

85)          F. Shoji, K. Kusumura and K. Oura:
A Si(100)-2×1: H Monohydride Surface Studied by Low-energy Recoil-ion Spectroscopy
Surf. Sci. 280, L247-L252 (1993).

86)          生地文也,尾浦憲治郎
イオンビーム弾性反跳法によるシリコン表面水素吸着の研究
表面科学 14, No. 7, 417-422 (1993).

87)          尾浦憲治郎
表面界面構造解析におけるイオン散乱法の特徴
表面科学 14, No. 7, 382-384 (1993).

88)          M. Watamori, F. Shoji, Y. Bando, T. Terashima and K. Oura:
Ion Channeling Study of SrTiO3 Substrates and As-Deposited YBa2Cu3Ox Thin Films
Jpn. J. Appl. Phys. 32, Part 1, No. 1A, 42-50 (1993).

89)          M. Naitoh, F. Shoji and K. Oura:
Direct Observation of the Growth Process of Ag Thin Film on a Hydrogen-terminated Si(111) Surface
Jpn. J. Appl. Phys. 31, Part 1, No. 12A, 4018-4019 (1992).

90)          尾浦憲治郎
イオンビームによる表面水素の定量とその表面研究への応用
表面科学 13, No. 6, 344-350 (1992).

91)          F. Shoji and K. Oura:
Low-energy Reocil Ion Spectroscopy Studies of H on Si(111)-7×7
Appl. Surf. Sci. 60/61, 166-171 (1992).

92)          T. Kinoshita, Y. Tanaka, K. Sumitomo, F. Shoji, K. Oura and I. Katayama:
Hydrogen-induced Reconstruction of Si(111)-3-Ag Surface Studied by TOF-ICISS
Appl. Surf. Sci. 60/61, 183-189 (1992).

93)          M. Naitoh, H. Ohnishi, Y. Ozaki, F. Shoji and K. Oura:
Hydrogen-induced Reordering of the Si(111)-3×√3-Al Surface Studied by ERDA/LEED
Appl. Surf. Sci. 60/61, 190-194 (1992).

94)          Y. Tanaka, T. Kinoshita, K. Sumitomo, F. Shoji, K. Oura and I. Katayama:
Ag Thin Film Growth on Hydrogen-terminated Si(100) Surface Studied by TOF-ICISS
Appl. Surf. Sci. 60/61, 195-199 (1992).

95)          H. Ohnishi, F. Shoji and K. Oura:
Effects of High-energy Ion Irradiation on YBa2Cu3Ox Thin Films
Tech.Report.Osaka-U. 42, 2113, 313-319 (1992).

96)          K. Sumitomo, Y. Tanaka, T. Kinoshita, F. Shoji and K. Oura:
Monte Carlo Simulation of Low Energy Ions Scattered from Ag(111) Surfaces
Tech. Report Osaka-U. 42, 2096, 173-179 (1992).

97)          S. Tanaka, T. Nakamura, M. Liyama, N. Yoshida, S. Takano, F. Shoji and K. Oura:
Low-energy Ion Scattering Spectroscopy Observations of c-axis-oriented YBa2Cu3O7-x Thin-Films – Effects of In-vacuum Annealing
Appl. Phys. Lett. 59, No. 27, 3637-3639 (1991).

98)          尾浦憲治郎
表面水素によるヘテロエピタキシャル過程の制御
生産技術誌 43, No. 4, 42-44 (1991).

99)          K. Oura, K. Sumitomo, T. Kobayashi, T. Kinoshita, Y. Tanaka, F. Shoji and I. Katayama:
Adsorption of H on Si(111)-3×√3-Ag: Evidence for Ag(111) Agglomerates Formation
Surf. Sci. 254, L460-L464 (1991).

100)      I. Katayama, T. Hanawa, F. Shoji and K. Oura:
ISS-AES Study of the Initial Growth Stage of Cu Thin Films on Si(111)-7×7
Appl. Surf. Sci. 48/49, 361-365 (1991).

101)      F. Shoji, A. Ogawa and K. Oura :
Sputter-Deposition by a New Penning-Discharge Source with an Axially Integrated Hot-Cathode
Appl. Surf. Sci. 48/49, 373-376 (1991).

102)      K. Sumitomo, T. Kobayashi, F. Shoji, K. Oura and I. Katayama:
Hydrogen-mediated Epitaxy of Ag on Si(111) as Studied by Low-energy Ion Scattering
Phys. Rev. Lett. 66, 1193-1196 (1991).

103)      F. Shoji, K. Sumitomo and K. Oura:
Initial Stages in the Adsorption of Ga and Ag on a Si(111) Surface Studied by Low-energy Na+-ion Scattering Spectroscopy
Tech. Report Osaka-U. 41, 2045, 119-124 (1991).

104)      内藤正路,生地文也,尾浦憲治郎:
高エネルギーイオンERDALEEDによる水素終端Si(111)面上の銀膜成長過程の観察
真空 34, No. 3, 140-142 (12-14) (1991).

105)      木下敏宏,小林忠司,住友弘二,片山逸雄,生地文也,尾浦憲治郎:
TOFICISS/ERDAによる表面解析
真空 34, No. 3, 136-139 (8-11) (1991).

106)      K. Sumitomo, K. Tanaka, I. Katayama, F. Shoji and K. Oura:
TOF-ICISS Study of Surface Damage Formed by Ar Ion Bombardment on Si(100)
Surf. Sci. 242, 90-94 (1991).

107)      M. Naitoh, F. Shoji and K. Oura:
Hydrogen-termination Effects on the Growth of Ag Thin Films on Si(111) Surfaces
Surf. Sci. 242, 152-156 (1991).

108)      F. Shoji, K. Kashihara, K. Sumitomo and K. Oura:
Low-energy Reocil-ion Spectroscopy Studies of Hydrogen Adsorption on Si(100)-2×1 Surfaces
Surf. Sci. 242, 422-427 (1991).

109)      F. Shoji, K. Oura and T. Hanawa:
A High-energy Ion-scattering Channeling and Low-energy Ion-scattering Apparatus for Surface Analysis
Vacuum 42, 189-194 (1991).

110)      K. Umezawa, F. Shoji, T. Hanawa and K. Oura:
Elastic Recoil Detection Analysis of the Concentration and Thermal Release of Hydrogen in a-Si:H Films by the ECR Plasma CVD Method
Jpn. J. Appl. Phys. 29, Part 1, 1656-1657 (1990).

111)      K. Oura, M. Naitoh, J. Yamane and F. Shoji:
Hydrogen-induced Reordering of the Si(111)-3×√3-Ag Surface
Surf. Sci. 230, L151-L154 (1990).

112)      F. Shoji, K. Kashihara, T. Hanawa and K. Oura:
Neutralization and Inelastic Scattering Energy Loss of Low Energy He+ Ions at InP (110) Surfaces
Nucl. Instrum & Methods Phys. Res. B 47, 1-6 (1990).

113)      M. Watamori, F. Shoji, T. Hanawa and K. Oura:
High-energy Ion Channeling Study of the Atomic Displacement of Si(111) Surfaces Induced by Ag Thin Films
Surf. Sci. 226, 77-88 (1990).

114)      K. Oura, M. Naitoh, F. Shoji, J. Yamane, K. Umezawa and T. Hanawa:
Elastic Recoil Detection Analysis of Hydrogen Adsorbed on Solid Surfaces
Nucl. Instrum & Methods Phys. Res. B 45, 199-202 (1990).

115)      T. Nakahara, S. Ohkura, F. Shoji, T. Hanawa and K. Oura:
RBS/channeling Study on the Annealing Behavior of Cu Thin Films on Si(100) and (111) Substrates
Nucl. Instrum & Methods Phys. Res. B 45, 467-470 (1990).

116)      尾浦憲治郎
高エネルギーイオン弾性反跳粒子検出法による半導体表面の水素の定量
応用物理 59, No. 7, 937-943 (1990).

117)      M. Watamori, F. Shoji, H. Itozaki, T. Hanawa and K. Oura:
Ion Channeling Study of Epitaxially Grown HoBa2Cu3OX Thin Films on MgO(001)
Jpn. J. Appl. Phys. 29, Part 1, No. 2, 252-258 (1990).

118)      K. Oura, J. Yamane, K. Umezawa, M. Naitoh, F. Shoji and T. Hanawa:
Hydrogen Adsorption on Si(100)-2x1 Surfaces Studied by Elastic Recoil Detection Analysis
Phys. Rev. B
41, No. 2, 1200-1203 (1990).

119)      F. Shoji, M. Watamori, T. Kuroi, K. Oura and T. Hanawa:
A Study of Ag Adsorption on Si(111) Surfaces by a Compct Arrangement of Na+ ISS and LEED
J. Phys. D: Appl.Phys. 22, 169-173 (1989).

120)      F. Shoji, K. Kashihara, T. Hanawa and K. Oura:
Surface Hydrogen Detection by Low Energy 4He+ Ion Scattering Spectroscopy
Surf. Sci. 220, L719-L725 (1989).

121)      F. Shoji, H.Taniguchi, O. Kusumoto, K. Oura, T. Hanawa, Y. Suzuki and S. Ogawa:
PIXE in Determination of Argon Impurity in Ion Beam Sputter-deposited Co-Cr Films
Jpn. J. Appl. Phys. 28, Part 1, No. 3, 545-548 (1989).

122)      M. Watamori, K. Oura, F. Shoji, T. Yotsuya, S. Ogawa and T. Hanawa:
High-energy Ion Beam Analysis of YBa2Cu3OX Thin Films
Jpn. J. Appl. Phys. 28, Part 1, No. 3, 346-350 (1989).

123)      K. Oura, H. Ugawa, F. Shoji and T. Hanawa:
Computer Simulation of the Effect of Disoedered Surface Layers on the Reflection of Phosphorus Ions from Silicon (100) Crystlline Targets in Grazing Incidence Ion Implantation
Nucl. Instrum. & Methods Phys. Res. B 39, 11-14 (1989).

124)      K. Oura, T. Kojima, F. Shoji and T. Hanawa:
Monte Carlo Simulation of Channeling Effects in High Energy (MeV) Phosphores Ion Implantation into Crystalline Silicon Targets
Nucl. Instrum. & Methods Phys. Res. B 37, 975-978 (1989).

125)      F. Shoji, K. Oura and T. Hanawa:
High-resolution Ion Scattering Spectrometry at Energies Ranging from 200 to 2000 eV
Nucl. Instrum and Methods Phys. Res. B 36, 23-29 (1988).

126)      K. Sumitomo, K. Tanaka, Y. Izawa, I. Katayama, F. Shoji, K. Oura and T. Hanawa:
Structural Study of Ag Overlayers Depositrd on a Si(111) Substrate by Impact-Collision Ion-Scattering-spectroscopy with Time-of-flight Detection
Appl. Surf. Sci. 41/42, 112-117 (1989).

127)      I. Katayama, F. Shoji, K. Oura and T. Hanawa:
Cylindrical Mirror Analyzer (CMA) with an Axially Integrated ISS-AES Gun for Surface Composition Analysis
Jpn. J. Appl .Phys. 27, Part 1, No. 11 A, 2164-2167 (1988).

128)      I. Katayama, K. Oura, F. Shoji and T. Hanawa:
Oxygen-enhanced Surface Segregation of Mn in Cu-Mn and Ag-Mn Alloy Films Studied by ISS/AES
Jpn. J. Appl. Phys. 27, Part 1, No. 10, L1822-1824 (1988).

129)      T. Kuroi, K. Umezawa, J. Yamane, F. Shoji, K. Oura and T. Hanawa:
Ion Beam Analysis of the Concertration and Thermal Release of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD Method
Jpn. J. Appl. Phys. 27, Part 1, No. 8, 1406-1410 (1988).

130)      K. Oura, H. Ugawa and T. Hanawa:
Computer Simulation of Reflection of P Ions from Si(100) Crystalline Targets in Grazing Incidence Ion Implantation
J. Appl. Phys 64, No. 4, 1795-1801 (1988).

131)      F. Shoji, Y. Nakayama, K. Oura T. Hanawa:
Measurements of Inelastic Energy Loss in Ion-surface-collisions in the Incident Energy Range 200-1500 eV He+ Si(111) Surface
Nucl. Instrum & Methods Phys. Res. B 33, 420-424 (1988).

132)      K. Umezawa, T. Kuroi, J. Yamane, S. Yano, F. Shoji, K. Oura and T. Hanawa:
Quantitative Hydrogen Analysis by Simultaneous Detection of 1H (19 F,αα)16O at 6.46 MeV and D 19 F-ERDA
Nucl. Instrum & Methods Phys. Res. B 33, 634-637 (1988)

133)      K. Umezawa, J. Yamane, T. Kuroi,F. Shoji, K. Oura and T. Hanawa:
Nuclear Reaction Analysis and Elastic Recoil Detection Analysis of the Retention of Deuterium and Hydrogen Implanted into Si and GaAs Crystals
Nucl. Instrum & Methods Phys. Res. B 33, 638-640 (1988).

134)      K. Sumitomo, K. Oura, I. Katayama, F. Shoji and T. Hanawa:
A TOF-ISS/ERDA Apparatus for Solid Surface Analysis
Nucl. Instrum & Methods Phys. Res. B 33, 871-875 (1988).

135)      M. Watamori, T. Nakahara, K. Oura, F. Shoji and T. Hanawa:
Structural Change of Si(100) and (111) Surfaces after Ag Deposition Studied by MeV Ion Channeling
Appl. Surf. Sci. 33/34, 51-57 (1988).

136)      F. Shoji, T. Kuroi, M. Watamori, K. Oura and T. Hanawa:
Capture of Ag Atoms in Defects Produced by Low-energy Ar+ Ion Bombardment on the Si(111) Surface
Appl. Surf. Sci. 33/34, 58-67 (1988).

137)      I. Katayama, F. Shoji, K. Oura and T. Hanawa:
An ISS/AES Study of Surface Segregation of Cu-Mn and Cu-Ag Alloy Films In-situ Deposited onto Low Temperature W Substrates
Appl. Surf. Sci. 33/34, 129-137 (1987).

138)      F. Shoji, K. Oura and T. Hanawa:
Inelastic Effects in Low Energy He+ Ion Scattering from Solid and Atomic Pb Targets
Surf. Sci. 205, L787-L792 (1988).

139)      K. Oura, M. Watamori, F. Shoji and T. Hanawa:
Atomic Displacements of Si in the Si(111)-(√3×√3) R30-Ag Surface Studied by High-energy Ion Channeling
Phys. Rev. B
38, No. 14, 10146-10149 (1988).

140)      尾浦憲治郎
高エネルギーイオンによる表面・界面評価技術
化学と工業 62, No. 6, 221-227 (1988).

141)      I. Katayama, K. Oura, F. Shoji and T. Hanawa:
Evidence for Solute Segregation on Cu-Mn Alloy Surfaces Studied by Low-energy Ion Scattering
Phys. Rev. B
38, No. 3, 2188-2191 (1988).

142)      T. Hanawa, I. Katayama, F. Shoji and K. Oura:
Study of Surface Segregation of Simultaneously Evaporated Mn-Ag Alloy Films by means of Ion Scattering Spectroscopy and Auger Electron Spectroscopy
Thin Solid Films 164, 37-41 (1988).

143)      綿森道夫,生地文也,尾浦憲治郎,塙輝雄:
Arイオン衝撃したSi(111)表面上での蒸着Ag原子の挙動
真空 30, No. 11, 865-872 (31-38) (1987).

144)      尾浦憲治郎
低速イオン散乱法
日本結晶学会誌 29, No. 2, 138-141 (1987).

145)      片山逸雄,生地文也,尾浦憲治郎,塙輝雄
CMAAES装置による低速イオン散乱分光
真空 29, No. 5, 446-450 (1986).

146)      M. Saitoh, K. Oura, K. Asano, F. Shoji and T. Hanawa:
Low Energy Ion Scattering Study of Adsorption and Desorption Processes of Pb on Si (111) Surfaces
Surf. Sci. 154, 394-416 (1985).

147)      K. Oura, M. Katayama, F. Shoji and T. Hanawa:
Real-space Determination of Atomic Structure of the Si(111)-Ö3xÖ3 R30°-Au Surface by Low-energy Alkali-ion Scattering
Phys. Rev. Lett. 55, 1486-1489 (1985).

148)      片山逸雄,生地文也,尾浦憲治郎,塙輝雄
イオン散乱分光による実用表面の観察
真空 28, No. 5, 267-271 (1985).

149)      K. Oura, F. Shoji and T. Hanawa:
Detection of Hydrogen on Solid Surfaces by Low-energy Recoil Ion Spectroscopy
Jpn. J. Appl. Phys. 23, Part 2, No. 9, L694-L696 (1984).

150)      K. Oura, Y. Yabuuchi, F. Shoji, T. Hanawa and S. Okada:
Low Energy Ion Scattering Study of Palladium Films on Silicon (111)-7×7 Surfaces
Nucl. Instrum. & Methods
218, No. 1-3, 253-256 (1983).

151)      Y. Yabuuchi, F. Shoji, K. Oura and T. Hanawa:
Surface Structure of the Si(111)-5×1-Au Studied by Low-energy Ion Scattering Spectroscopy
Surf. Sci. 131, L412-L418 (1983).

152)      Y. Yabuuchi, F. Shoji, K. Oura, T. Hanawa, Y. Kishikawa and S. Okada:
New Surface Structure of Pd on Si(111) Studied by Low-energy Ion-scattering Spectroscopy and LEED-AES
Jpn. J. Appl. Phys. 21, Part 2, No. 12, L752-L754 (1982).

153)      尾浦憲治郎
半導体・金属界面における原子構造
月刊フィジクス 3, No. 9, 574-577 (1982).

154)      K. Oura, S. Okada, Y. Kishikawa and T. Hanawa:
Surface Structure of Epitaxial Pd2Si Thin Films
Appl. Phys. Lett. 40, No. 2, 138-140 (1982).

155)      Y.Terada, T. Yoshizuka, K. Oura and T. Hanawa:
A Structure Analysis of Ag-adsorbed Si(111) Surface by LEED/CMTA
Surf. Sci.114, 65-84 (1982).

156)      M. Saitoh, F. Shoji, K. Oura and T. Hanawa:
Initial Growth Process and Surface Structure of Ag on Si(111) Studied by Low-energy Ion Scattering Spectroscopy (ISS) and LEED-AES
Surf. Sci. 112, No. 3, 306-324 (1981).

157)      K. Oura, T. Taminaga and T. Hanawa:
Electronic Properties and Atomic Arrangement of the Ag/Si(111) Interface
Solid State Communications 37, 523-526 (1981).

158)      S. Okada, Y. Kishikawa, K. Oura and T. Hanawa:
LEED Observation of the Platinum Induced Superstructures on Si Substrates
Surf. Sci. 100, L457-L460 (1980).

159)      M. Saitoh, F. Shoji, K. Oura and T. Hanawa:
Atomic Arrangement of the Si(111)-√3x√3-Ag Structure Derived from Low-enerdy Ion-scattering Spectroscopy
Jpn. J. Appl. Phys. 19, Part 2, No. 7, L421-L424 (1980).

160)      S. Okada, K. Oura, T. Hanawa and K. Satoh:
A LEED-AES Study of Thin Pd Films on Si(111) and (100) Substrates
Surf. Sci. 97, 88-100 (1980).

161)      K. Oura and T. Hanawa:
LEED-AES Study of the Au/Si(100) System
Sur. Sci. 82, 202-214 (1979).

 

 

参考文献(CAICISS

1)             M. Katayama, T. Nakayama, C. F. McConville and M. Aono:
Influence of Surfactant Coverage on Epitaxial Growth of Ge on Si(001)
Phys. Rev. B 54, 8600-8604 (1996).

2)             M. Katayama, T. Nakayama, C. F. McConville and M. Aono:
Surface and Interface Structural Control using Coaxial Impact-Collision Ion Scattering Spectroscopy (CAICISS)
Nucl. Instrum. & Methods Phys. Res. B 99, 598-601 (1995).

3)             片山光浩,青野正和:
同軸型直衝突イオン散乱スペクトロメトリ
RADIOISOTOPES 44, No. 6, 412-428 (1995).

4)             M. Kawai, Z.-Y. Liu, T. Hanada, M. Katayama, and M. Aono:
Layer Controlled Growth of Oxide Superconductors
Appl. Surf. Sci. 82/83, 487-493 (1994).

5)             M. Katayama, C. F. McConville, M. Kawai and M. Aono:
Novel Automated Method for Oxide Superconductor Film Growth
RIKEN Review 2, 25-26 (1993).

6)             片山光浩,中山知信,青野正和:
CAICISS による表面構造モニターとそれによる膜成長コントロール
表面科学 14, No. 7, 423-428 (1993).

7)             T. Hashizume, M. Katayama, D. Jeon, M. Aono and T. Sakurai:
The Absolute Coverage of K on the Si(111)-3x1-K Surface
Jpn. J. Appl. Phys. 32, Part 2, L1263-L1265 (1993).

8)             M. Katayama, B. V. King, R. S. Daley, R. S. Williams, E. Nomura and M. Aono:
“Surface and Interface Structural Analysis by Coaxial Impact-Collision Ion Scattering Spectroscopy (CAICISS)”
Springer Series in Material Science Vol. 17 (Ordering at Surfaces and Interfaces)
edited by A. Yoshimori and H. Watanabe, 67-72 (1992).

9)             青野正和,片山光浩:
イオン散乱分光によるエピタクシーのその場解析
日本物理学会編「表面新物質とエピタクシー」(培風館)第12, 164-178 (1992).

10)          M. Aono, M. Katayama and E. Nomura:
Exploring Surface Structures by Coaxial Impact-Collision Ion Scattering Spectroscopy (CAICISS)
Nucl. Instrum. & Methods Phys. Res. B 64, 29-37 (1992).

11)          片山光浩,青野正和:
同軸型直衝突イオン散乱分光法(CAICISS
応用物理 61, No. 2, 171-172 (1992).

12)          片山光浩,野村英一,青野正和:
同軸型直衝突イオン散乱分光法(CAICISS)とその応用
表面科学 12, No. 10, 615-622 (1991).

13)          片山光浩,野村英一,青野正和:
イオン散乱分光と表面構造の動的観察
セラミックス 26, No. 6, 525-530 (1991).

14)          M. Katayama, M. Aono, H. Oigawa, Y. Nannichi, H. Sugahara and M. Oshima:
“Surface Structure of InAs(001) Treated with (NH
4)2Sx Solution”
Jpn. J. Appl. Phys. 30, Part 2, L786-L789 (1991).

15)          M. Katayama, B. V. King, E. Nomura and M. Aono:
“Structure Analysis of the CaF
2/Si(111) Interface in its Initial Stage of Formation by Coaxial Impact-Collision Ion Scattering Spectroscopy (CAICISS)”
Prog. Theore. Phys. Suppl. 106, 315-320 (1991).

16)          M. Katayama, R. S. Williams, M. Kato, E. Nomura and M. Aono:
Structure Analysis of the Si(111)Ö3xÖ3 R30°-Ag Surface
Phys. Rev. Lett. 66, 2762-2765 (1991).

17)          I. Kamiya, M. Katayama, E. Nomura and M. Aono:
Separation of Scattered Ions and Neutrals in CAICISS with an Acceleration Tube
Surf. Sci. 242, 404-409 (1991).

18)          M. Katayama, E. Nomura, H. Soejima, S. Hayashi and M. Aono:
Real-time Monitoring of Molecular-Beam Epitaxy Processes with Coaxial Impact-Collision Ion Scattering Spectroscopy (CAICISS)
Nucl. Instrum. & Methods Phys. Res. B 45, 408-411 (1990).

19)          青野正和,片山光浩,神谷格,野村英一:
微小領域の機能評価法とその応用−新しい低速イオン散乱分光法−
応用物理 59, No. 3, 336-344 (1990).

20)          青野正和,片山光浩:
イオンビームによる表面構造解析
表面科学 10, No. 10, 676-685 (1989).

21)          M. Kato, M. Katayama, T. Chasse and M. Aono:
Channeling and Backscattering of Low Energy Ions
Nucl. Instrum & Methods Phys. Res. B 39, 30-34 (1989).

22)          M. Aono, M. Katayama, E. Nomura, D. Choi, T. Chasse and M. Kato:
Recent Developments in Low-energy Ion Scattering Spectroscopy (ISS) for Surface Structural Analysis
Nucl. Instrum & Methods Phys. Res. B 37/38, 264-269 (1989).

23)          青野正和,片山光浩:
単原子層の原子構造
応用物理 57, No. 11, 1686-1697 (1988).

24)          M. Katayama, E. Nomura, N. Kanekama, H. Soejima and M. Aono:
Coaxial Impact-Collision Ion Scattering Spectroscopy (CAICISS): A Novel Method for Surface Structure Analysis
Nucl. Instrum. & Methods Phys. Res. B 33, 857-861 (1988).