イオンビーム分析（CAICISS/TOF-ERDA）グループ 研究業績
（1980年以降）
Last
update: August 4, 2021
1)
O, Kubo, S. Kinoshita, H. Sato, K.
Miyamoto, R. Sugahara, S. Endo, H. Tabata, T.Okuda, and M. Katayama:
“Kagome-like
Structure of Germanene on Al(111)”,
Phys. Rev. B 104, 085404 1-6 (2021).
2)
H. Kagitani, S. Kinoshita, O. Kubo, K.
Takahashi, H. Tabata, M. Katayama:
“Structural Analysis of
Self-Assembled Platinum-Silicide Nanostructures on Si(001) Using Ion Scattering
Spectroscopy”,
e-Journal of Surface Science and Nanotechnology 16, 66-71 (2018).
3)
S. Osaka, O Kubo, K. Takahashi, M. Oda,
K. Kaneko, H. Tabata, S. Fujita and M. Katayama:
“Unpredicted Surface
Termination of α-Fe2O3(0001) Film Grown by Mist Chemical
Vapor Deposition”,
Surf. Sci. 660, 9-15 (2017).
4)
D.
Tamba, O. Kubo, M. Oda, S. Osaka, K. Takahashi, H. Tabata, K. Kaneko, S. Fujita
and M. Katayama:
“Surface
Termination Structure ofα-Ga2O3 Film Grown by Mist
Chemical Vapor Deposition”
Appl. Phys. Lett. 108, Issue 25, 251602
1-5 (2016).
5)
S.
Okasaka, O. Kubo, D. Tamba, T. Ohashi, H. Tabata and M. Katayama:
“Surface Structure Analysis of
BaSi2(100) Epitaxial Film Grown on Si(111) Using CAICISS”
Surf. Sci. 635, 115-122 (2015).
6)
H.
Suto, K. Imai, S. Fujii, S. Honda and M. Katayama:
“Growth Process and Surface
Structure of MnSi on Si(111)”
Surf. Sci. 603, 226-231 (2009).
7)
H. Suto, S. Fujii, F. Kawamura, M. Yoshimura, Y. Kitaoka, Y.
Mori, S. Honda and M. Katayama:
“Surface Characterization of
GaN(0001) Grown by Liquid Phase Epitaxy Using Coaxial Impact-Collision Ion
Scattering Spectroscopy”
Jpn. J. Appl. Phys. 47, No. 9,
7281-7284 (2008).
8)
H. Suto, S. Fujii, N. Miyamae, R. D. Armitage, J.
Suda, T. Kimoto, S. Honda and M. Katayama:
“Structure Analysis of ZrB2(0001) Surface Prepared by ex situ HF Treatment”
Jpn. J. Appl. Phys. 45,
Part 2, Letters, No.19, L497-L500 (2006).
9)
S. Fujii, Y. Michishita,
N. Miyamae, H. Suto, S. Honda, H. Okado, K. Oura and M. Katayama:
”Growth Process and
Structure of Er/Si(001) Thin Film”
Thin Solid Films 508, 82-85 (2006).
10)
S. Fujii, Y. Michishita, N. Miyamae, H.
Suto, S. Honda, K. Oura and M. Katayama:
“Determination of Lattice
Polarity and Surface Relaxation of ZnO(0001)-Zn Surface by Coaxial
Impact-Collision Ion Scattering Spectroscopy”
Jpn. J.
Appl. Phys. 44, Part 2, Letters,
No.41, L1285-L1288 (2005).
11)
S. Fujii, Y. Michishita, N. Miyamae and K. Oura and M.
Katayama:
”Development of
Low-Energy Neutral Atom Scattering Spectroscopy Based on CAICISS Operable in
Gas Phase Atmosphere”
Nucl. Instrum. & Methods Phys. Res. B 232, 290-294 (2005).
12)
S. Fujii, M. Katayama, Y. Michishita and K. Oura:
”In Situ Monitoring of Surface
Processes in Plasma by Coaxial Impact-Collision Ion Scattering Spectroscopy”
Jpn. J. Appl. Phys. 44, Part 1, No.
4A , 1911-1914 (2005).
13)
R.
Tsushima, Y. Michishita, S. Fujii, H. Okado, K. Umezawa, Y. Maeda, Y. Terai, K.
Oura and M. Katayama:
”Growth Process and
Structure of Fe/Si(111) Ultrathin Film: Transition from Single-Domain
Fe(111)/Si(111) to β-FeSi2”
Surf. Sci. 579, 73-79 (2005).
14)
R. Tsushima, M. Katayama, T. Fujino, M. Shindo, T. Okuno and
K. Oura:
“Temperature
Dependence of Flat Ge/Si(001) Heterostructures as Observed by CAICISS”
Appl. Surf. Sci.216, 19-23 (2003).
15)
T.
Fujino, M. Katayama, S. Inoue, A. Tatsumi, T. Horikawa and K. Oura:
”Quantitative
Analysis of Hydrogen-Induced Si Segregation on Ge-Covered Si(001) Surface”
Jpn. J. Appl. Phys. 42, Part 2, No.5A
, L485-L488 (2003).
16)
K. Oura and M. Katayama:
”Ion Beam as a Probe to
Study the Behavior of Hydrogen on Silicon Surfaces”
Current Applied Physics 3, 39-44 (2003).
17)
M. Katayama:
”Exploring Surface
Processes by Coaxial Impact-Collision Ion Scattering Spectroscopy and
Time-of-Flight Elastic Recoil Detection Analysis”
Current Applied Physics 3, 65-69
(2003).
18)
T. Fujino, M. Katayama, T. Okuno, M. Shindo, R. Tsushima and
K. Oura:
“Thermal
Stability in the Morphology of Ge films on Si(001) grown by Hydrogen-Surfactant-Mediated
Epitaxy”
Jpn. J. Appl. Phys. 42, Part 2, No. 1AB, L63-L66 (2003).
19)
片山光浩，藤野俊明，尾浦憲治郎：
“気相雰囲気下の表面プロセスのイオンビームその場計測 － Ge/Si(001)水素サーファクタント媒介エピタキシー－”
表面科学 23, No. 12, 759-766 (2002).
20)
J.-T.
Ryu, M. Katayama and K. Oura:
“Sn Thin Film Growth
on Si(111) Surface Studied by CAICISS”
Surf. Sci. 515, 199-204 (2002).
21)
T.
Fujino, M. Katayama, Y. Yamazaki, S. Inoue, T. Okuno and K. Oura:
“Influence
of Hydrogen-Surfactant Coverage on Ge/Si(100)
Hetroepitaxy”
Jpn. J. Appl. Phys. 41, Part 2, No.
7A, L790-L793 (2002).
22)
J.-T.
Ryu, T. Fujino, M. Katayama, Y.-B. Kim and K. Oura:
“Influence of
Interface Structures on Sn Thin Film
Growth on Si(111) Surface”
Appl. Surf. Sci. 190, 139-143
(2002).
23)
T.
Okuno, T. Fujino, M. Shindo, M. Katayama, K. Oura, S. Sonoda and S. Shimizu:
“Influence
of Mn Incorporation on Molecular Beam Epitaxial
Growth of GaMnN Film”
Jpn. J. Appl. Phys. 41, Part 2, No.
4A, L415 - L417 (2002).
24)
T. Fujino, T. Okuno, M. Katayama and K. Oura:
“Hydrogen Segregation and its
Detrimental Effect in Epitaxial
Growth of Ge on Hydrogen-terminated Si(001)”
Jpn. J.
Appl. Phys. 40, Part 2, No.11A,
L1173-L1175 (2001).
25)
T.
Fujino, M. Katayama, K. Inudzuka, T. Okuno, K. Oura and T. Hirao:
“Surface
Hydroxyl Formation on Vacuum-annealed
TiO2(110)”
Appl. Phys. Lett. 79, No. 17,
2716-2718 (2001).
26)
M.
Katayama, T. Fujino, Y. Yamazaki, S. Inoue, J.-T. Ryu and K. Oura:
“Coaxial
Impact-Collision Ion Scattering Spectroscopy and Time-of-flight Elastic Recoil
Detection Analysis for In Situ Monitoring of Surface Processes in Gas Phase
Atmosphere”
Jpn. J. Appl. Phys. 40, Part 2, No.
6A, L576 - L579 (2001).
27)
T.
Fujino, T. Fuse, J.-T. Ryu, K. Inudzuka, Y. Yamazaki, M. Katayama and K. Oura:
“Observation of
Hydrogen Adsorption on
6H-SiC(0001) Surface”
Appl. Surf. Sci. 169-170, 113-116
(2001).
28)
T.
Fujino, M. Katayama, Y. Yamazaki, S. Inoue, J.-T. Ryu and K. Oura:
“Ion
Scattering and Recoiling Spectroscopy for Real Time Monitoring of Surface
Processes in a Gas Phase Atmosphere”
Surf. Rev. Lett. 7, 657-659 (2000).
29)
T.
Fujino, T. Fuse, J.-T. Ryu, K. Inudzuka, Y. Yamazaki, M. Katayama and K. Oura:
“Structural
Analysis of 6H-SiC(0001)Ö3xÖ3 Reconstructed Surface”
Jpn. J. Appl. Phys. 39, Part 1, No.
11, 6410-6412 (2000).
30)
T.
Fujino, T. Fuse, J.-T. Ryu, K. Inudzuka, T. Nakano, K. Goto, Y. Yamazaki, M.
Katayama and K. Oura:
“Ge Thin Film Growth
on Si(111) using Hydrogen Surfactant”
Thin Solid Films 369, 25-28
(2000).
31)
T.
Fujino, T. Fuse, J.-T. Ryu, K. Inudzuka, Y. Yamazaki, M. Katayama and K. Oura:
“Adsorption
of Atomic Hydrogen on Ag-covered
6H-SiC(0001) Surface”
Jpn. J. Appl. Phys. 39, Part 1, No.
7B, 4340-4342 (2000).
32)
片山光浩：
“気相雰囲気における表面プロセスのイオンビームその場計測法の開拓”
生産技術誌 52, No. 3, 59-62 (2000).
33)
T.
Fujino, T. Fuse, E. Tazou, T. Nakano, K. Inudzuka, K. Goto, Y. Yamazaki, M.
Katayama and K. Oura:
“In-situ Monitoring of
Hydrogen-surfactant Effect during Ge Growth on Si(001) using Coaxial
Impact-Collision Ion Scattering Spectroscopy and Time-of-flight Elastic
Detection Analysis”
Nucl. Instrum. & Methods Phys. Res. B
161-163, 419-423 (2000).
34)
J.-T.
Ryu, O. Kubo, T. Fujino, T. Fuse, T. Harada, K. Kawamoto, M. Katayama, A. A.
Saranin, A.V. Zotov and K. Oura:
“Atomic-hydrogen-induced
Self-organization of Si(111)Ö3xÖ3-In Surface Phase Studied by CAICISS and STM”
Surf. Sci. 447, 117-125 (2000).
35)
片山光浩，藤野俊明，尾浦憲治郎：
“シリコン表面における水素介在プロセスのイオンビームその場計測”
応用物理学会薄膜・表面物理分科会 News Letter, No. 108, 2-8 (2000).
36)
K.
Oura, V. G. Lifshits, A. A. Saranin, A. V. Zotov and M. Katayama:
“Hydrogen Interaction
with Clean and Modified Silicon Surfaces”
Surf. Sci. Rep. 35, 1-69 (1999).
37)
T.
Fuse, K. Kawamoto, M. Katayama and K. Oura:
“In Situ Observation
of Ge d-layer
in Si(001) using Quasi Medium Energy Ion Scattering Spectroscopy”
Materials Science in Semiconductor Processing 2, 159-164 (1999).
38)
J.-T.
Ryu, T. Fuse, O. Kubo, H. Tani, T. Fujino, T. Harada, A. A. Saranin, A. V.
Zotov, M. Katayama and K. Oura:
“Adsorption
of Atomic Hydrogen on the Si(001)4x3-In Surface Studied by Coaxial Impact
Collision Ion Scattering Spectroscopy and Scanning Tunneling Microscopy”
J. Vac. Sci. Technol. B 17, 983-988
(1999).
39)
T.
Fuse, T. Fujino, J.-T. Ryu, M. Katayama and K. Oura:
“Total
Cross Section of Electron Stimulated Desorption of Hydrogen from
Hydrogen-Terminated Ge/Si(001) as Observed by Time-of-flight Elastic Recoil
Detection Analysis”
Jpn. J. Appl. Phys. 38, Part 1, No.
5A, 2878-2880 (1999).
40)
T.
Fuse, J.-T. Ryu, T. Fujino, K. Inudzuka, M. Katayama and K. Oura:
“Adsorption
of H on the Ge/Si(001) Surface as Studied by Time-of-flight Elastic Recoil
Detection Analysis and Coaxial Impact Collision Ion Scattering Spectroscopy”
Jpn. J. Appl. Phys. 38, Part 1, No.
3A, 1359-1362 (1999).
41)
M.
Watamori, M. Isono, H. Madono, Y. Kawano, K. Sasabe, T. Hirao and K. Oura:
“Ion Beam Analysis of
PZT Thin Films”
Appl. Surf. Sci. 142, 422-427
(1999).
42)
野田研二，柳正鐸，片山光浩，尾浦憲治郎：
“飛行時間型直衝突イオン散乱分光法によるSi(111)表面上のSn薄膜成長の観察”
真空
42，208-211 (1999).
43)
T.
Fuse, T. Fujino, J.-T. Ryu, M. Katayama and K. Oura:
“Electron Stimulated
Desorption of Hydrogen from H/Si(001)-1x1 Surface Studied by Time-of-flight
Elastic Recoil Detection Analysis”
Surf. Sci. 420, 81-86 (1999).
44)
片山光浩，柳正鐸，久保理，A. A. Saranin，A. V. Zotov，尾浦憲治郎：
“金属／シリコン初期界面の水素誘起自己組織化”
表面科学19,
No. 9, 579-587 (1998).
45)
T.
Fuse, K. Kawamoto, T. Shiizaki, E. Tazou, M. Katayama and K. Oura:
“Quasi-Medium
Energy Ion Scattering Spectroscopy Observation of a Ge d-doped Layer Fabricated by
Hydrogen Mediated Epitaxy”
Jpn. J. Appl. Phys. 37, Part 1,
2625-2628 (1998).
46)
J.-T.
Ryu, K. Kui, K. Noda, M. Katayama and K. Oura:
“The Effect of
Hydrogen Termination on In Growth on Si(100) Surface”
Surf. Sci. 401, L425-L431 (1998).
47)
T.
Fuse, K. Kawamoto, T. Shiizaki, E. Tazou, M. Katayama and K. Oura:
“Observation of
Behavior of Ge d-doped
layer in Si(001)”
Nucl. Instrum. & Methods Phys. Res. B
136-138, 1080-1085 (1998).
48)
J.-T.
Ryu, K. Kui, K. Noda, M. Katayama and K. Oura:
“CAICISS Studies of
Atomic-hydrogen-induced Structural Changes of the Sb Terminated Si Surfaces”
Nucl. Instrum. & Methods Phys. Res. B
136-138, 1102-1107 (1998).
49)
F. Shoji, A. Yamada, T.
Shiramizu and K. Oura:
“Surface-recoil
Processes of Hydrogen on Si (100)-2×1:H and Si (100)-1×1:2H Surfaces Studied by
Low-energy He Ion Beams”
Nucl. Instrum. & Methods Phys. Res.
B 135, 366-371
(1998).
50)
T.
Fuse, K. Kawamoto, S. Kujime, T. Shiizaki, M. Katayama and K. Oura:
“Quasi-Medium Energy
Ion Scattering Spectroscopy Observation of Surface Segregation of Ge d-doped
Layer during Si Molecular Beam Epitaxy”
Surf. Sci. 393, L93-L98 (1997).
51)
T.
Fuse, K. Kawamoto, T. Shiizaki, M. Katayama and K. Oura:
“Quasi-Medium Energy
Ion Scattering Spectroscopy Study of Ge δ-layer on Si(001)”
Appl. Surf. Sci. 121/122, 218-222
(1997).
52)
J.-T.
Ryu, K. Kui, K. Noda, M. Katayama and K. Oura:
“Atomic-hydrogen-induced
Structural Change of the Si(100)-(2x1)-Sb Surface Studied by TOF-ICISS”
Appl. Surf. Sci. 121/122, 223-227
(1997).
53)
F.
Shoji and K. Oura:
“Hydrogen Analysis of
Si Surfaces by Low-energy Ions”
J. Nucl. Mater. 248, 443-447 (1997).
54)
椎崎貴史，布瀬暁志，久次米繁範，川本清，片山光浩，尾浦憲治郎：
“Si(001)
における Ge
デルタドープ層の挙動－TOF-LEIS
による観察－”
表面科学 18, No. 7, 394-398 (1997).
55)
J.-T.
Ryu, K. Kui, K. Noda, M. Katayama and K. Oura:
“Adsorption
of Atomic Hydrogen on the Si(100)-(2x1)-Sb Surface”
Jpn. J. Appl. Phys. 36, Part 1,
4435-4439 (1997).
56)
M. Watamori, S. Honda,
O. Kubo, I. Kanno, T. Hirao, K. Sasabe and K. Oura:
“High-energy Ion Beam
Analysis of Ferroelectric Thin Films”
Appl. Surf. Sci. 117/118, 453-458
(1997).
57)
M. Watamori, Y. Maeda,
O. Kubo and K. Oura:
”A New Method for the
Detection of Native Oxide on Si with Combined Use of 16O(α, α)16O Resonance and Channeling”
Appl. Surf. Sci. 113/114, 403-407
(1997).
58)
S. Honda, K. Chihara,
M. Watamori and K. Oura:
”Depth Profilimg of
Oxygen Concertration of Indium Tin Oxide Fabricated by Bias Sputtering”
Appl. Surf. Sci. 113/114, 408-411
(1997)
59)
J.-T.
Ryu, K. Kui, Y. Tanaka, M. Katayama, K. Oura and I. Katayama:
“TOF-ICISS
Observation of Pb Growth on the Si(111)-Ö3xÖ3-Ag Surface”
Appl. Surf. Sci. 113/114, 393-397 (1997).
60)
J.-T. Ryu, K. Kui, M.
Katayama and K. Oura:
“The Effects of Atomic-Hydrogen on the Morphology of the Initial Stage of
Sb Growth on Si(100) Studied by TOF-ICISS”
Proceedings of the Second Topical Meeting on Structural Dynamics of
Epitaxy and Quantum Mechanical Approach, Kobe,
91-95
(1997).
61)
M. Watamori, K. Oura,
T. Hirao and K. Sasabe:
”Backscattering
Analysis of Thin SiO2 Films on Si using 16O(α, α)16O
3.045 MeV Resonance”
Nucl. Instrum & Meth. Phys. Res.B
118, 228-232
(1996).
62)
M. Watamori, K. Oura,
T. Hirao and K. Sasabe:
”Channeling Analysis
of Oxygen in Oxide Materials using 16O(α,
α)16O Resonant
Backscattering”
Nucl. Instrum & Methods Phys. Res.
B 118, 233-237
(1996).
63)
Y. Tanaka, H.
Morishita, J.-T. Ryu, I. Katayama and K. Oura:
”The Initial Stage of
Pb Thin Film Growth on Si(111) Surface Studied by TOF-ICISS”
Nucl. Instrum.& Methods Phys. Res.
B 118, 530-532
(1996).
64)
S. Honda, M. Watamori
and K. Oura:
”The Effects of Oxygen
Content on Electrical and Optical Properties of Indium Tin Oxide Films Fabricated
by Reactive Sputtering”
Thin Solid Films 281-282, 206-208
(1996).
65)
K. Kawamoto, T. Mori,
S. Kujime and K. Oura:
”Observation of the
Diffusion of Ag Atoms though an a-Si Layer on Si(111) by Low-energy Ion
Scattering”
Surf. Sci. 363, 156-160
(1996).
66)
Y. Tanaka, H.
Morishita, J.-T. Ryu, I. Katayama and K. Oura:
”Thin-film Growth-mode
Analysis by Low Energy Ion Scattering”
Surf. Sci. 363, 161-165
(1996).
67)
F. Shoji, A. Yamada and
K. Oura:
”Inelastic Energy Loss
of Recoiled Hydrogen Ions in Low-energy He+, Ne+
and Ar+ Collisions
with Hydrogenated Silicon Surface”
Nucl. Instrum. & Methods Phys. Res.
B 115, 196-199
(1996).
68)
S. Honda, A. Tsujimoto,
M. Watamori and K. Oura:
“Effects
of Post-Annealing on Oxygen Content of Indium Tin Oxide Films Fabricated by
Reactive Sputtering”
Jpn. J. Appl. Phys. 34, Part 2, No.
10B, L1386-L1389
(1995).
69)
K. Kawamoto and K. Oura:
“Scattering
Process of Low-Energy Ions from Binary Compound Surfaces at 180°”
Jpn. J. Appl. Phys. 34, Part
1, No. 9A, 4929-4931
(1995).
70)
K. Kawamoto, K. Inari,
T. Mori and K. Oura:
“A
New Apparatus for Impact Collision Ion Scattering Spectroscopy”
Jpn. J. Appl. Phys. 34, Part
1, No. 9A, 4917-4919
(1995).
71)
M. Watamori, K. Oura
and T. Nakamura:
“Quantitative
Depth Profiling of Oxygen in Homoepitaxial SrTiO3 Films”
J. Vac. Sci. Technol.
A 13, 1293-1298
(1995).
72)
S. Honda, A. Tsujimoto,
M. Watamori and K. Oura:
“Oxygen
Content of Indium Tin Oxide Films Fabricated by Reactive Sputtering”
J. Vac. Sci. Technol.
A 13, 1100-1103
(1995).
73)
綿森道夫，尾浦憲治郎：
“高精度RBS共鳴散乱法による薄膜の酸素分析”
表面科学 16, No. 6, 391-396 (1995).
74)
尾浦憲治郎：
“弾性反跳検出分析(ERDA)”
RADIOISOTOPES 44, No. 5, 364-368
(1995).
75)
綿森道夫，尾浦憲治郎：
“ヘリウムイオン共鳴散乱による酸素含有量の絶対量測定”
応用物理 64, No. 4, 374-375 (1995).
76)
尾浦憲治郎：
“半導体表面における水素媒介エピタキシー”
まてりあ 34, No. 2, 115-120, (1995).
77)
M. Watamori, M. Naitoh,
H. Morioka, Y. Maeda and K. Oura:
”Low Temperature
Adsorption of Hydrogen on Si(111) and (100) Surfaces Studied by Elastic Recoil
Detection Analysis”
Appl. Surf. Sci. 82/83, 417-421
(1994).
78)
Y. Tanaka, H.
Morishita, M. Watamori, K. Oura and I. Katayama:
”Structural Study of
SrTiO3(100) Surfaces
by Low Energy Ion Scattering”
Appl. Surf. Sci. 82/83, 528-531
(1994).
79)
M. Watamori, F. Shoji
and K. Oura:
“Methodrogy
for Accurate Oxygen Distribution Analysis and its Application to YBa2Cu3OX Thin
Films using 16O(a,a)16O 3.045 MeV Resonance Reaction”
Jpn. J. Appl. Phys. 33, Part
1, No. 10, 6039-6045
(1994).
80)
S. Honda, A. Tsujimoto,
M. Watamori and K. Oura:
“Depth
Profilimg of Oxygen Concertration of Indium Tim Oxide Films Fabricated by
Reactive Sputtering”
Jpn. J.Appl. Phys. 33, Part
2, No. 9A, L1257-L1260
(1994).
81)
K. Oura, M. Naitoh, H.
Morioka, M. Watamori and F. Shoji:
”Elastic Recoil
Detection Analysis of Coadsorption of Hydrogen and Deuterium on Clean Si
Surfaces”
Nucl. Instrum.& Methods Phys. Res. B
85, 344-346
(1994).
82)
K. Oura, Y. Tanaka, H.
Morishita and F. Shoji:
”Low Energy Ion
Scattering Study of Hydrogen-induced Recordering of Pb Monolayer Films on Si
(111) Surfaces”
Nucl. Instrum.& Methods Phys. Res. B
85, 439-442
(1994).
83)
尾浦憲治郎：
“高エネルギーイオンビーム法”
応用物理 63, No.2, 173-174 (1994).
84)
尾浦憲治郎，住友弘二，内藤正路：
“シリコン表面の水素変性と薄膜形成初期過程”
固体物理 28, No. 12, 943-949 (1993).
85)
K. Oura, M. Naitoh and
F. Shoji:
”Ion Beam Analysis of Hydrogen on Silicon Surfaces”
Microbeam Analysis 2, 139-150
(1993).
86)
M. Naitoh, H. Morioka,
F. Shoji and K. Oura:
”Coadsorption of
Hydrogen and Deuterium on Si(100) Surface Studied by Elastic Recoil Detection
Analysis”
Surf. Sci. 297, 135-140
(1993).
87)
F. Shoji, K. Kusumura
and K. Oura:
”A Si(100)-2×1: H
Monohydride Surface Studied by Low-energy Recoil-ion Spectroscopy”
Surf. Sci. 280, L247-L252
(1993).
88)
生地文也，尾浦憲治郎：
“イオンビーム弾性反跳法によるシリコン表面水素吸着の研究”
表面科学 14, No. 7, 417-422 (1993).
89)
尾浦憲治郎：
“表面界面構造解析におけるイオン散乱法の特徴”
表面科学 14, No. 7, 382-384 (1993).
90)
M. Watamori, F. Shoji,
Y. Bando, T. Terashima and K. Oura:
“Ion
Channeling Study of SrTiO3 Substrates and As-Deposited YBa2Cu3Ox Thin Films”
Jpn. J. Appl. Phys. 32, Part
1, No. 1A, 42-50
(1993).
91)
M. Naitoh, F. Shoji and
K. Oura:
“Direct Observation of the Growth Process of Ag Thin Film on a
Hydrogen-terminated Si(111) Surface”
Jpn. J. Appl. Phys. 31, Part
1, No. 12A, 4018-4019
(1992).
92)
尾浦憲治郎：
“イオンビームによる表面水素の定量とその表面研究への応用”
表面科学 13, No. 6, 344-350 (1992).
93)
F. Shoji and K. Oura:
”Low-energy Reocil Ion
Spectroscopy Studies of H on Si(111)-7×7”
Appl. Surf. Sci. 60/61, 166-171
(1992).
94)
T. Kinoshita, Y.
Tanaka, K. Sumitomo, F. Shoji, K. Oura and I. Katayama:
”Hydrogen-induced
Reconstruction of Si(111)-√3-Ag Surface Studied by TOF-ICISS”
Appl. Surf. Sci. 60/61, 183-189
(1992).
95)
M. Naitoh, H. Ohnishi,
Y. Ozaki, F. Shoji and K. Oura:
”Hydrogen-induced
Reordering of the Si(111)-√3×√3-Al Surface Studied by ERDA/LEED”
Appl. Surf. Sci. 60/61, 190-194
(1992).
96)
Y. Tanaka, T.
Kinoshita, K. Sumitomo, F. Shoji, K. Oura and I. Katayama:
”Ag Thin Film Growth
on Hydrogen-terminated Si(100) Surface Studied by TOF-ICISS”
Appl. Surf. Sci. 60/61, 195-199
(1992).
97)
H. Ohnishi, F. Shoji
and K. Oura:
“Effects of High-energy Ion Irradiation on YBa2Cu3Ox
Thin Films”
Tech.Report.Osaka-U. 42, 2113,
313-319
(1992).
98)
K. Sumitomo, Y. Tanaka,
T. Kinoshita, F. Shoji and K. Oura:
“Monte Carlo Simulation of Low Energy Ions Scattered from Ag(111) Surfaces”
Tech. Report Osaka-U.
42, 2096,
173-179
(1992).
99)
S.
Tanaka, T. Nakamura, M. Liyama, N. Yoshida, S. Takano, F. Shoji and K. Oura:
“Low-energy
Ion Scattering Spectroscopy Observations
of c-axis-oriented YBa2Cu3O7-x Thin-Films – Effects of In-vacuum Annealing”
Appl. Phys. Lett. 59, No. 27,
3637-3639 (1991).
100)
尾浦憲治郎：
“表面水素によるヘテロエピタキシャル過程の制御”
生産技術誌 43, No. 4, 42-44 (1991).
101)
K. Oura, K. Sumitomo,
T. Kobayashi, T. Kinoshita, Y. Tanaka, F. Shoji and I. Katayama:
”Adsorption of H on
Si(111)-√3×√3-Ag:
Evidence for Ag(111) Agglomerates Formation”
Surf. Sci. 254, L460-L464
(1991).
102)
I. Katayama, T. Hanawa,
F. Shoji and K. Oura:
”ISS-AES Study of the
Initial Growth Stage of Cu Thin Films on Si(111)-7×7”
Appl. Surf. Sci. 48/49, 361-365
(1991).
103)
F.
Shoji, A. Ogawa and K. Oura :
”Sputter-Deposition by
a New Penning-Discharge Source with an Axially Integrated Hot-Cathode”
Appl. Surf. Sci. 48/49, 373-376 (1991).
104)
K. Sumitomo, T.
Kobayashi, F. Shoji, K. Oura and I. Katayama:
“Hydrogen-mediated
Epitaxy of Ag on Si(111) as Studied by Low-energy Ion Scattering”
Phys. Rev. Lett. 66, 1193-1196
(1991).
105)
F. Shoji, K. Sumitomo
and K. Oura:
“Initial Stages in the Adsorption of Ga and Ag on a Si(111) Surface Studied
by Low-energy Na+-ion Scattering Spectroscopy”
Tech. Report Osaka-U.
41, 2045,
119-124
(1991).
106)
内藤正路，生地文也，尾浦憲治郎:
“高エネルギーイオンERDAとLEEDによる水素終端Si(111)面上の銀膜成長過程の観察”
真空
34, No. 3,
140-142 (12-14)
(1991).
107)
木下敏宏，小林忠司，住友弘二，片山逸雄，生地文也，尾浦憲治郎:
“TOF型ICISS/ERDAによる表面解析”
真空
34, No. 3,
136-139 (8-11)
(1991).
108)
K. Sumitomo, K. Tanaka,
I. Katayama, F. Shoji and K. Oura:
”TOF-ICISS Study of
Surface Damage Formed by Ar Ion Bombardment on Si(100)”
Surf. Sci. 242, 90-94
(1991).
109)
M. Naitoh, F. Shoji and
K. Oura:
”Hydrogen-termination
Effects on the Growth of Ag Thin Films on Si(111) Surfaces”
Surf. Sci. 242, 152-156
(1991).
110)
F. Shoji, K. Kashihara,
K. Sumitomo and K. Oura:
”Low-energy Reocil-ion
Spectroscopy Studies of Hydrogen Adsorption on Si(100)-2×1 Surfaces”
Surf. Sci. 242, 422-427
(1991).
111)
F.
Shoji, K. Oura and T. Hanawa:
“A High-energy
Ion-scattering Channeling and Low-energy Ion-scattering Apparatus for Surface
Analysis”
Vacuum 42, 189-194 (1991).
112)
K. Umezawa, F. Shoji,
T. Hanawa and K. Oura:
“Elastic Recoil Detection Analysis of the Concentration and Thermal Release
of Hydrogen in a-Si:H Films by the ECR Plasma CVD Method”
Jpn. J. Appl. Phys. 29, Part 1, 1656-1657
(1990).
113)
K. Oura, M. Naitoh, J.
Yamane and F. Shoji:
”Hydrogen-induced
Reordering of the Si(111)-√3×√3-Ag Surface”
Surf. Sci. 230, L151-L154
(1990).
114)
F. Shoji, K. Kashihara,
T. Hanawa and K. Oura:
”Neutralization and
Inelastic Scattering Energy Loss of Low Energy He+ Ions at InP (110) Surfaces”
Nucl. Instrum & Methods Phys. Res.
B 47, 1-6
(1990).
115)
M. Watamori, F. Shoji,
T. Hanawa and K. Oura:
”High-energy Ion
Channeling Study of the Atomic Displacement of Si(111) Surfaces Induced by Ag
Thin Films”
Surf. Sci. 226, 77-88
(1990).
116)
K. Oura, M. Naitoh, F.
Shoji, J. Yamane, K. Umezawa and T. Hanawa:
”Elastic Recoil
Detection Analysis of Hydrogen Adsorbed on Solid Surfaces”
Nucl. Instrum & Methods Phys. Res.
B 45, 199-202
(1990).
117)
T. Nakahara, S. Ohkura,
F. Shoji, T. Hanawa and K. Oura:
”RBS/channeling Study
on the Annealing Behavior of Cu Thin Films on Si(100) and (111) Substrates”
Nucl. Instrum & Methods Phys. Res.
B 45, 467-470
(1990).
118)
尾浦憲治郎：
“高エネルギーイオン弾性反跳粒子検出法による半導体表面の水素の定量”
応用物理 59, No. 7, 937-943 (1990).
119)
M. Watamori, F. Shoji,
H. Itozaki, T. Hanawa and K. Oura:
“Ion Channeling Study of Epitaxially Grown HoBa2Cu3OX
Thin Films on MgO(001)”
Jpn. J. Appl. Phys. 29, Part 1, No. 2,
252-258
(1990).
120)
K. Oura, J. Yamane, K.
Umezawa, M. Naitoh, F. Shoji and T. Hanawa:
“Hydrogen Adsorption
on Si(100)-2x1 Surfaces Studied by Elastic Recoil Detection Analysis”
Phys. Rev. B 41, No. 2,
1200-1203
(1990).
121)
F. Shoji, M. Watamori,
T. Kuroi, K. Oura and T. Hanawa:
“A Study of Ag Adsorption on Si(111) Surfaces by a Compct Arrangement of Na+
ISS and LEED”
J. Phys. D: Appl.Phys.
22, 169-173
(1989).
122)
F. Shoji, K. Kashihara,
T. Hanawa and K. Oura:
”Surface Hydrogen
Detection by Low Energy 4He+ Ion Scattering Spectroscopy”
Surf. Sci. 220, L719-L725
(1989).
123)
F. Shoji, H.Taniguchi,
O. Kusumoto, K. Oura, T. Hanawa, Y. Suzuki and S. Ogawa:
“PIXE in Determination of Argon Impurity in Ion Beam Sputter-deposited
Co-Cr Films”
Jpn. J. Appl. Phys. 28, Part 1, No. 3,
545-548
(1989).
124)
M. Watamori, K. Oura,
F. Shoji, T. Yotsuya, S. Ogawa and T. Hanawa:
“High-energy Ion Beam Analysis of YBa2Cu3OX
Thin Films”
Jpn. J. Appl. Phys. 28, Part 1, No. 3,
346-350
(1989).
125)
K. Oura, H. Ugawa, F.
Shoji and T. Hanawa:
”Computer Simulation
of the Effect of Disoedered Surface Layers on the Reflection of Phosphorus Ions
from Silicon (100) Crystlline Targets in Grazing Incidence Ion Implantation”
Nucl. Instrum. & Methods Phys. Res.
B 39, 11-14
(1989).
126)
K. Oura, T. Kojima, F.
Shoji and T. Hanawa:
”Monte Carlo Simulation
of Channeling Effects in High Energy (MeV) Phosphores Ion Implantation into
Crystalline Silicon Targets”
Nucl. Instrum. & Methods Phys. Res.
B 37, 975-978
(1989).
127)
F. Shoji, K. Oura and
T. Hanawa:
”High-resolution Ion
Scattering Spectrometry at Energies Ranging from 200 to 2000 eV”
Nucl. Instrum and Methods Phys. Res.
B 36, 23-29
(1988).
128)
K. Sumitomo, K. Tanaka,
Y. Izawa, I. Katayama, F. Shoji, K. Oura and T. Hanawa:
”Structural Study of
Ag Overlayers Depositrd on a Si(111) Substrate by Impact-Collision
Ion-Scattering-spectroscopy with Time-of-flight Detection”
Appl. Surf. Sci. 41/42, 112-117
(1989).
129)
I. Katayama, F. Shoji,
K. Oura and T. Hanawa:
“Cylindrical Mirror Analyzer (CMA) with an Axially Integrated ISS-AES Gun
for Surface Composition Analysis”
Jpn. J. Appl .Phys. 27, Part 1, No. 11
A, 2164-2167
(1988).
130)
I. Katayama, K. Oura,
F. Shoji and T. Hanawa:
“Oxygen-enhanced Surface Segregation of Mn in Cu-Mn and Ag-Mn Alloy Films
Studied by ISS/AES”
Jpn. J. Appl. Phys. 27, Part 1, No. 10,
L1822-1824
(1988).
131)
T. Kuroi, K. Umezawa,
J. Yamane, F. Shoji, K. Oura and T. Hanawa:
“Ion Beam Analysis of the Concertration and Thermal Release of Hydrogen in
Silicon Nitride Films Prepared by ECR Plasma CVD Method”
Jpn. J. Appl. Phys. 27, Part 1, No. 8,
1406-1410
(1988).
132)
K. Oura, H. Ugawa and
T. Hanawa:
“Computer
Simulation of Reflection of P Ions from Si(100) Crystalline Targets in Grazing
Incidence Ion Implantation”
J. Appl. Phys 64, No. 4,
1795-1801
(1988).
133)
F. Shoji, Y. Nakayama,
K. Oura T. Hanawa:
”Measurements of
Inelastic Energy Loss in Ion-surface-collisions in the Incident Energy Range
200-1500 eV He+ Si(111)
Surface”
Nucl. Instrum & Methods Phys. Res.
B 33, 420-424
(1988).
134)
K. Umezawa, T. Kuroi,
J. Yamane, S. Yano, F. Shoji, K. Oura and T. Hanawa:
”Quantitative Hydrogen
Analysis by Simultaneous Detection of 1H (19 F,αα)16O
at 6.46 MeV and D 19 F-ERDA”
Nucl. Instrum & Methods Phys. Res.
B 33, 634-637
(1988)
135)
K. Umezawa, J. Yamane,
T. Kuroi,F. Shoji, K. Oura and T. Hanawa:
”Nuclear Reaction
Analysis and Elastic Recoil Detection Analysis of the Retention of Deuterium and
Hydrogen Implanted into Si and GaAs Crystals”
Nucl. Instrum & Methods Phys. Res.
B 33, 638-640
(1988).
136)
K. Sumitomo, K. Oura,
I. Katayama, F. Shoji and T. Hanawa:
”A TOF-ISS/ERDA
Apparatus for Solid Surface Analysis”
Nucl. Instrum & Methods Phys. Res.
B 33, 871-875
(1988).
137)
M. Watamori, T.
Nakahara, K. Oura, F. Shoji and T. Hanawa:
”Structural Change of
Si(100) and (111) Surfaces after Ag Deposition Studied by MeV Ion Channeling”
Appl. Surf. Sci. 33/34, 51-57
(1988).
138)
F. Shoji, T. Kuroi, M.
Watamori, K. Oura and T. Hanawa:
”Capture of Ag Atoms
in Defects Produced by Low-energy Ar+
Ion Bombardment on the Si(111) Surface”
Appl. Surf. Sci. 33/34, 58-67
(1988).
139)
I. Katayama, F. Shoji,
K. Oura and T. Hanawa:
”An ISS/AES Study of
Surface Segregation of Cu-Mn and Cu-Ag Alloy Films In-situ Deposited onto Low
Temperature W Substrates”
Appl. Surf. Sci. 33/34, 129-137
(1987).
140)
F. Shoji, K. Oura and
T. Hanawa:
”Inelastic Effects in
Low Energy He+ Ion
Scattering from Solid and Atomic Pb Targets”
Surf. Sci. 205, L787-L792
(1988).
141)
K. Oura, M. Watamori,
F. Shoji and T. Hanawa:
“Atomic
Displacements of Si in the Si(111)-(√3×√3) R30゜-Ag
Surface Studied by High-energy Ion Channeling”
Phys. Rev. B 38, No. 14,
10146-10149
(1988).
142)
尾浦憲治郎：
“高エネルギーイオンによる表面・界面評価技術”
化学と工業 62, No. 6, 221-227 (1988).
143)
I. Katayama, K. Oura,
F. Shoji and T. Hanawa:
“Evidence for Solute
Segregation on Cu-Mn Alloy Surfaces Studied by Low-energy Ion Scattering”
Phys. Rev. B 38, No. 3,
2188-2191
(1988).
144)
T. Hanawa, I. Katayama,
F. Shoji and K. Oura:
”Study of Surface
Segregation of Simultaneously Evaporated Mn-Ag Alloy Films by means of Ion
Scattering Spectroscopy and Auger Electron Spectroscopy”
Thin Solid Films 164, 37-41
(1988).
145)
綿森道夫，生地文也，尾浦憲治郎，塙輝雄:：
“Ar＋イオン衝撃したSi(111)表面上での蒸着Ag原子の挙動”
真空
30, No. 11,
865-872 (31-38)
(1987).
146)
尾浦憲治郎：
“低速イオン散乱法”
日本結晶学会誌 29, No. 2, 138-141 (1987).
147)
片山逸雄，生地文也，尾浦憲治郎，塙輝雄：
“CMA型AES装置による低速イオン散乱分光”
真空
29, No. 5,
446-450
(1986).
148)
M. Saitoh, K. Oura, K.
Asano, F. Shoji and T. Hanawa:
”Low Energy Ion
Scattering Study of Adsorption and Desorption Processes of Pb on Si (111)
Surfaces”
Surf. Sci. 154, 394-416
(1985).
149)
K.
Oura, M. Katayama, F. Shoji and T. Hanawa:
“Real-space
Determination of Atomic Structure of the Si(111)-Ö3xÖ3 R30°-Au
Surface by Low-energy Alkali-ion
Scattering”
Phys. Rev. Lett. 55, 1486-1489 (1985).
150)
片山逸雄，生地文也，尾浦憲治郎，塙輝雄：
“イオン散乱分光による実用表面の観察”
真空
28, No. 5,
267-271
(1985).
151)
K. Oura, F. Shoji and
T. Hanawa:
“Detection of Hydrogen on Solid Surfaces by Low-energy Recoil Ion
Spectroscopy”
Jpn. J. Appl. Phys. 23, Part 2, No. 9,
L694-L696
(1984).
152)
K. Oura, Y. Yabuuchi,
F. Shoji, T. Hanawa and S. Okada:
”Low Energy Ion
Scattering Study of Palladium Films on Silicon (111)-7×7 Surfaces”
Nucl. Instrum. & Methods 218, No. 1-3,
253-256
(1983).
153)
Y. Yabuuchi, F. Shoji,
K. Oura and T. Hanawa:
”Surface Structure of
the Si(111)-5×1-Au Studied by Low-energy Ion Scattering Spectroscopy”
Surf. Sci. 131, L412-L418
(1983).
154)
Y. Yabuuchi, F. Shoji,
K. Oura, T. Hanawa, Y. Kishikawa and S. Okada:
“New Surface Structure of Pd on Si(111) Studied by Low-energy
Ion-scattering Spectroscopy and LEED-AES”
Jpn. J. Appl. Phys. 21, Part 2, No. 12,
L752-L754
(1982).
155)
尾浦憲治郎：
“半導体・金属界面における原子構造”
月刊フィジクス 3,
No. 9, 574-577
(1982).
156)
K. Oura, S. Okada, Y.
Kishikawa and T. Hanawa:
”Surface Structure of Epitaxial Pd2Si Thin Films”
Appl. Phys. Lett. 40, No. 2,
138-140
(1982).
157)
Y.Terada,
T. Yoshizuka, K. Oura and T. Hanawa:
”A Structure Analysis
of Ag-adsorbed Si(111) Surface by LEED/CMTA”
Surf. Sci.114, 65-84 (1982).
158)
M. Saitoh, F. Shoji, K.
Oura and T. Hanawa:
”Initial Growth
Process and Surface Structure of Ag on Si(111) Studied by Low-energy Ion
Scattering Spectroscopy (ISS) and LEED-AES”
Surf. Sci. 112, No. 3,
306-324
(1981).
159)
K.
Oura, T. Taminaga and T. Hanawa:
“Electronic Properties
and Atomic Arrangement of the Ag/Si(111) Interface”
Solid State Communications 37,
523-526 (1981).
160)
S.
Okada, Y. Kishikawa, K. Oura and T. Hanawa:
”LEED Observation of
the Platinum Induced Superstructures on Si Substrates”
Surf. Sci. 100, L457-L460 (1980).
161)
M. Saitoh, F. Shoji, K.
Oura and T. Hanawa:
“Atomic Arrangement of the Si(111)-√3x√3-Ag Structure Derived from
Low-enerdy Ion-scattering Spectroscopy”
Jpn. J. Appl. Phys. 19, Part 2, No. 7,
L421-L424
(1980).
162)
S.
Okada, K. Oura, T. Hanawa and K. Satoh:
”A LEED-AES Study of Thin
Pd Films on Si(111) and (100) Substrates”
Surf. Sci. 97, 88-100 (1980).
163)
K.
Oura and T. Hanawa:
”LEED-AES Study of the
Au/Si(100) System”
Sur. Sci. 82, 202-214 (1979).
参考文献（CAICISS）
1)
M.
Katayama, T. Nakayama, C. F. McConville and M. Aono:
“Influence of
Surfactant Coverage on Epitaxial Growth of Ge on Si(001)”
Phys. Rev. B 54, 8600-8604 (1996).
2)
M.
Katayama, T. Nakayama, C. F. McConville and M. Aono:
“Surface and Interface
Structural Control using Coaxial
Impact-Collision Ion Scattering Spectroscopy (CAICISS)”
Nucl. Instrum. & Methods Phys. Res. B
99, 598-601 (1995).
3)
片山光浩，青野正和：
”同軸型直衝突イオン散乱スペクトロメトリ”
RADIOISOTOPES 44, No. 6, 412-428
(1995).
4)
M.
Kawai, Z.-Y. Liu, T. Hanada, M. Katayama, and M. Aono:
“Layer Controlled
Growth of Oxide Superconductors”
Appl. Surf. Sci. 82/83, 487-493 (1994).
5)
M.
Katayama, C. F. McConville, M. Kawai and M. Aono:
“Novel
Automated Method for Oxide Superconductor Film Growth”
RIKEN Review 2, 25-26 (1993).
6)
片山光浩，中山知信，青野正和：
”CAICISS
による表面構造モニターとそれによる膜成長コントロール”
表面科学 14, No. 7, 423-428 (1993).
7)
T.
Hashizume, M. Katayama, D. Jeon, M. Aono and T. Sakurai:
“The
Absolute Coverage of K on the Si(111)-3x1-K Surface”
Jpn. J. Appl. Phys. 32, Part 2,
L1263-L1265 (1993).
8)
M.
Katayama, B. V. King, R. S. Daley, R. S. Williams, E. Nomura and M. Aono:
“Surface and Interface Structural Analysis by Coaxial Impact-Collision Ion
Scattering Spectroscopy (CAICISS)”
Springer Series in Material Science Vol. 17
(Ordering at Surfaces and Interfaces)
edited by A. Yoshimori and H. Watanabe, 67-72 (1992).
9)
青野正和，片山光浩：
”イオン散乱分光によるエピタクシーのその場解析”
日本物理学会編「表面新物質とエピタクシー」（培風館）第12章, 164-178 (1992).
10)
M.
Aono, M. Katayama and E. Nomura:
“Exploring Surface
Structures by Coaxial Impact-Collision Ion Scattering Spectroscopy (CAICISS)”
Nucl. Instrum. & Methods Phys. Res. B
64, 29-37 (1992).
11)
片山光浩，青野正和：
”同軸型直衝突イオン散乱分光法（CAICISS）”
応用物理 61, No. 2, 171-172 (1992).
12)
片山光浩，野村英一，青野正和：
”同軸型直衝突イオン散乱分光法（CAICISS）とその応用”
表面科学 12, No. 10, 615-622 (1991).
13)
片山光浩，野村英一，青野正和：
”イオン散乱分光と表面構造の動的観察”
セラミックス 26, No. 6, 525-530 (1991).
14)
M.
Katayama, M. Aono, H. Oigawa, Y. Nannichi, H. Sugahara and M. Oshima:
“Surface Structure of InAs(001) Treated with (NH4)2Sx
Solution”
Jpn. J. Appl. Phys. 30, Part 2,
L786-L789 (1991).
15)
M.
Katayama, B. V. King, E. Nomura and M. Aono:
“Structure Analysis of the CaF2/Si(111) Interface in
its Initial Stage of Formation by Coaxial Impact-Collision Ion Scattering
Spectroscopy (CAICISS)”
Prog. Theore. Phys. Suppl. 106, 315-320 (1991).
16)
M.
Katayama, R. S. Williams, M. Kato, E. Nomura and M. Aono:
“Structure Analysis
of the Si(111)Ö3xÖ3 R30°-Ag
Surface”
Phys. Rev. Lett. 66, 2762-2765
(1991).
17)
I.
Kamiya, M. Katayama, E. Nomura and M. Aono:
“Separation of
Scattered Ions and Neutrals in CAICISS with an Acceleration Tube”
Surf. Sci. 242, 404-409 (1991).
18)
M.
Katayama, E. Nomura, H. Soejima, S. Hayashi and M. Aono:
“Real-time Monitoring
of Molecular-Beam Epitaxy Processes with Coaxial Impact-Collision Ion
Scattering Spectroscopy (CAICISS)”
Nucl. Instrum. & Methods Phys. Res. B
45, 408-411 (1990).
19)
青野正和，片山光浩，神谷格，野村英一：
”微小領域の機能評価法とその応用－新しい低速イオン散乱分光法－”
応用物理 59, No. 3, 336-344 (1990).
20)
青野正和，片山光浩：
”イオンビームによる表面構造解析”
表面科学 10, No. 10, 676-685 (1989).
21)
M.
Kato, M. Katayama, T. Chasse and M. Aono:
“Channeling and
Backscattering of Low Energy Ions”
Nucl. Instrum & Methods Phys. Res. B
39, 30-34 (1989).
22)
M.
Aono, M. Katayama, E. Nomura, D. Choi, T. Chasse and M. Kato:
“Recent Developments
in Low-energy Ion Scattering Spectroscopy (ISS) for Surface Structural Analysis”
Nucl. Instrum & Methods Phys. Res. B
37/38, 264-269 (1989).
23)
青野正和，片山光浩：
”単原子層の原子構造”
応用物理 57, No. 11, 1686-1697 (1988).
24)
M.
Katayama, E. Nomura, N. Kanekama, H. Soejima and M. Aono:
“Coaxial
Impact-Collision Ion Scattering Spectroscopy (CAICISS): A Novel Method for
Surface Structure Analysis”
Nucl. Instrum. & Methods Phys. Res. B
33, 857-861 (1988).